JPS5627520A - Parallel-connected transistor amplifier - Google Patents
Parallel-connected transistor amplifierInfo
- Publication number
- JPS5627520A JPS5627520A JP10388279A JP10388279A JPS5627520A JP S5627520 A JPS5627520 A JP S5627520A JP 10388279 A JP10388279 A JP 10388279A JP 10388279 A JP10388279 A JP 10388279A JP S5627520 A JPS5627520 A JP S5627520A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- partition plate
- parallel
- metal partition
- loaded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To increase an output while making it easy to distribute and mix electric power signals of a parallel-connected transistor amplifier, by loading a metal partition plate in parallel to the H surface of a rectangular waveguide. CONSTITUTION:The size of rectangular waveguide 1 in the direction of the E surface is divided by two and metal partition plate 2 is loaded in parallel to the H surface; and transistor amplifiers with input circuit 4 and output circuit 8 composed of microwave IC are loaded at waveguide parts 3 partitioned by metal partition plate 2. Signal electric power entering this waveguide 1 is divided by metal partition plate 2 and, after amplified by transistors 5(5a,5b), propagates through waveguide 9 and mixes together at parts D1 and D2 at the end of metal partition plate 2, thereby leading an output signal out. Further, transistors 5 are loaded at intervals one fourth the propagation wavelength in the length direction of the waveguide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10388279A JPS5627520A (en) | 1979-08-15 | 1979-08-15 | Parallel-connected transistor amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10388279A JPS5627520A (en) | 1979-08-15 | 1979-08-15 | Parallel-connected transistor amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627520A true JPS5627520A (en) | 1981-03-17 |
JPS6128252B2 JPS6128252B2 (en) | 1986-06-30 |
Family
ID=14365797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10388279A Granted JPS5627520A (en) | 1979-08-15 | 1979-08-15 | Parallel-connected transistor amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627520A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726605A (en) * | 1996-04-14 | 1998-03-10 | Northrop Grumman Corporation | Silicon carbide RF power module |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03210728A (en) * | 1990-01-12 | 1991-09-13 | Mitsubishi Electric Corp | Circuit-breaker with wiring for electric leakage alarm function |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4889655A (en) * | 1972-02-25 | 1973-11-22 | ||
JPS5058969A (en) * | 1973-09-26 | 1975-05-22 |
-
1979
- 1979-08-15 JP JP10388279A patent/JPS5627520A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4889655A (en) * | 1972-02-25 | 1973-11-22 | ||
JPS5058969A (en) * | 1973-09-26 | 1975-05-22 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726605A (en) * | 1996-04-14 | 1998-03-10 | Northrop Grumman Corporation | Silicon carbide RF power module |
Also Published As
Publication number | Publication date |
---|---|
JPS6128252B2 (en) | 1986-06-30 |
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