JPS5627137A - Inorganic photoresist material - Google Patents
Inorganic photoresist materialInfo
- Publication number
- JPS5627137A JPS5627137A JP10305079A JP10305079A JPS5627137A JP S5627137 A JPS5627137 A JP S5627137A JP 10305079 A JP10305079 A JP 10305079A JP 10305079 A JP10305079 A JP 10305079A JP S5627137 A JPS5627137 A JP S5627137A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substance
- contg
- base
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/705—Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems
Landscapes
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Abstract
PURPOSE:To obtain a pattern on a substance to be processed in accordance with an exposure pattern with precision by allowing halogen to be contained in the 2nd layer side of the Se-base 1st layer and forming the 2nd layer made of Ag or contg. Ag. CONSTITUTION:On substance 3 such as semiconductor to be processed the Se-base 1st layer 1 of Se70Ge30 or the like is formed by vacuum deposition or sputtering, and at the end of the formation halide is added to the Se-base material to form surface layer 5 contg. <= several mol% Cl, Br or I by vacuum deposition or other method. On layer 1 having layer 5 the 2nd layer 2 made of Ag or Ag chalcogenide or halide is formed to manufacture an inorg. photoresist material. This material is imagewise exposed L and developed. The exposed portion is made insoluble, and portion 1a of layer 1 and portion 2a of layer 2 of the unexposed portion are dissolved and removed to disclose substance 3 as portion 3a. Thus, Se-contg. layer 4 of the exposed portion remains to give precise pattern 3a on substance 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10305079A JPS5627137A (en) | 1979-08-13 | 1979-08-13 | Inorganic photoresist material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10305079A JPS5627137A (en) | 1979-08-13 | 1979-08-13 | Inorganic photoresist material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5627137A true JPS5627137A (en) | 1981-03-16 |
Family
ID=14343836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10305079A Pending JPS5627137A (en) | 1979-08-13 | 1979-08-13 | Inorganic photoresist material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627137A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6368939B1 (en) * | 1997-04-18 | 2002-04-09 | Nec Corporation | Multilevel interconnection structure having an air gap between interconnects |
-
1979
- 1979-08-13 JP JP10305079A patent/JPS5627137A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6368939B1 (en) * | 1997-04-18 | 2002-04-09 | Nec Corporation | Multilevel interconnection structure having an air gap between interconnects |
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