JPS5626470A - Field-effect transistor manufacturing process - Google Patents

Field-effect transistor manufacturing process

Info

Publication number
JPS5626470A
JPS5626470A JP10223879A JP10223879A JPS5626470A JP S5626470 A JPS5626470 A JP S5626470A JP 10223879 A JP10223879 A JP 10223879A JP 10223879 A JP10223879 A JP 10223879A JP S5626470 A JPS5626470 A JP S5626470A
Authority
JP
Japan
Prior art keywords
membrane
region
electrode
layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10223879A
Other languages
Japanese (ja)
Inventor
Ken Uchida
Tatsumi Shirasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10223879A priority Critical patent/JPS5626470A/en
Publication of JPS5626470A publication Critical patent/JPS5626470A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve integration density, by achieving contact formation of a source or a drain or of the both by self-alignment, so that spare spaces between a gate electrode and the source and drain can be reduced to either one of these. CONSTITUTION:A thick field oxide membrane 2 is formed on a surrounding section of an Si substrate 1, a thin gate oxide membrane 3 is provided in the center section on the surface of the substrate 1 surrounded by the membrane 2, and on the top of this a gate electrode 4 consisting of an amorphous Si is attached. And then, by heat-treatment, top layer section of the electrode 4 is turned into an oxide membrane 5, an impurity-containing amorphous Si layer 6 is made to grow on an entire surface including the membrane 5, and heat-treatment is conducted to disperse the impurity in the membrane 6, so that a source region 7 and a drain region 8 are formed on the both sides of the electrode 4. And then, an oxidation preventing mask 9 is provided on the region 7 or the region 8, an exposed layer 6 is selectively oxidized to be turned into an oxide membrane 17, the mask 9 is removed and an aluminum electrode 11 is attached onto the remaining amorphous layer 6.
JP10223879A 1979-08-13 1979-08-13 Field-effect transistor manufacturing process Pending JPS5626470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10223879A JPS5626470A (en) 1979-08-13 1979-08-13 Field-effect transistor manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10223879A JPS5626470A (en) 1979-08-13 1979-08-13 Field-effect transistor manufacturing process

Publications (1)

Publication Number Publication Date
JPS5626470A true JPS5626470A (en) 1981-03-14

Family

ID=14322048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10223879A Pending JPS5626470A (en) 1979-08-13 1979-08-13 Field-effect transistor manufacturing process

Country Status (1)

Country Link
JP (1) JPS5626470A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150369A (en) * 1984-12-25 1986-07-09 Toshiba Corp Read-only semiconductor memory device and manufacture thereof
JPS61270822A (en) * 1985-05-25 1986-12-01 Sony Corp Manufacture of semiconductor device
JPS6240765A (en) * 1985-08-15 1987-02-21 Toshiba Corp Read-only semiconductor memory and manufacture thereof
US4992389A (en) * 1985-02-08 1991-02-12 Kabushiki Kaisha Toshiba Making a self aligned semiconductor device
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314580A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5314580A (en) * 1976-07-26 1978-02-09 Hitachi Ltd Production of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150369A (en) * 1984-12-25 1986-07-09 Toshiba Corp Read-only semiconductor memory device and manufacture thereof
US4755864A (en) * 1984-12-25 1988-07-05 Kabushiki Kaisha Toshiba Semiconductor read only memory device with selectively present mask layer
US4992389A (en) * 1985-02-08 1991-02-12 Kabushiki Kaisha Toshiba Making a self aligned semiconductor device
JPS61270822A (en) * 1985-05-25 1986-12-01 Sony Corp Manufacture of semiconductor device
US5101262A (en) * 1985-08-13 1992-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing it
JPS6240765A (en) * 1985-08-15 1987-02-21 Toshiba Corp Read-only semiconductor memory and manufacture thereof

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