JPS56100476A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56100476A JPS56100476A JP330180A JP330180A JPS56100476A JP S56100476 A JPS56100476 A JP S56100476A JP 330180 A JP330180 A JP 330180A JP 330180 A JP330180 A JP 330180A JP S56100476 A JPS56100476 A JP S56100476A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- ions
- source
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To obtain a region of a desired area without pollution by providing a resist layer on a gate electrode, applying heat treatment thereto and covering the laternal surface of the electrode with the suspended resist layer on the occasion that source and drain regions are formed on a semiconductor substrate by injection of ions by using the electrode as a mask. CONSTITUTION:On the periphery of the P type Si substrate 1 is provided a thick field oxidized film 2, to an active region surrounded by the film 2 is connected a thin gate oxidized film 3, and in the central part of the film 3 is formed a polycrystalline Si gate electrode 4. Next, the electrode 4 is covered with the resist layer 5, and by using this as a mask and injecting P ions with low density of impurities, a shallow depression region is formed in the source and drain regions. After that, heat treatment is applied under a prescribed condition, the layer 5 is melted and turned into a layer 5' covering the lateral side of electrode 4 as well. Then, as ions with high density of impurities are injected into a depression region other than the depression region covered with suspension of the layer 5' and thus the source and drain resions of desired dimensions are obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP330180A JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP330180A JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56100476A true JPS56100476A (en) | 1981-08-12 |
Family
ID=11553538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP330180A Pending JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100476A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137454U (en) * | 1984-02-23 | 1985-09-11 | ソニー株式会社 | signal readout device |
-
1980
- 1980-01-16 JP JP330180A patent/JPS56100476A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60137454U (en) * | 1984-02-23 | 1985-09-11 | ソニー株式会社 | signal readout device |
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