JPS56100476A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56100476A JPS56100476A JP330180A JP330180A JPS56100476A JP S56100476 A JPS56100476 A JP S56100476A JP 330180 A JP330180 A JP 330180A JP 330180 A JP330180 A JP 330180A JP S56100476 A JPS56100476 A JP S56100476A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- ions
- source
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To obtain a region of a desired area without pollution by providing a resist layer on a gate electrode, applying heat treatment thereto and covering the laternal surface of the electrode with the suspended resist layer on the occasion that source and drain regions are formed on a semiconductor substrate by injection of ions by using the electrode as a mask. CONSTITUTION:On the periphery of the P type Si substrate 1 is provided a thick field oxidized film 2, to an active region surrounded by the film 2 is connected a thin gate oxidized film 3, and in the central part of the film 3 is formed a polycrystalline Si gate electrode 4. Next, the electrode 4 is covered with the resist layer 5, and by using this as a mask and injecting P ions with low density of impurities, a shallow depression region is formed in the source and drain regions. After that, heat treatment is applied under a prescribed condition, the layer 5 is melted and turned into a layer 5' covering the lateral side of electrode 4 as well. Then, as ions with high density of impurities are injected into a depression region other than the depression region covered with suspension of the layer 5' and thus the source and drain resions of desired dimensions are obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP330180A JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP330180A JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56100476A true JPS56100476A (en) | 1981-08-12 |
Family
ID=11553538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP330180A Pending JPS56100476A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100476A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60137454U (en) * | 1984-02-23 | 1985-09-11 | ソニー株式会社 | signal readout device |
-
1980
- 1980-01-16 JP JP330180A patent/JPS56100476A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60137454U (en) * | 1984-02-23 | 1985-09-11 | ソニー株式会社 | signal readout device |
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