JPS5624623A - Transistor device - Google Patents

Transistor device

Info

Publication number
JPS5624623A
JPS5624623A JP10088879A JP10088879A JPS5624623A JP S5624623 A JPS5624623 A JP S5624623A JP 10088879 A JP10088879 A JP 10088879A JP 10088879 A JP10088879 A JP 10088879A JP S5624623 A JPS5624623 A JP S5624623A
Authority
JP
Japan
Prior art keywords
fetp
fetn
gate
source
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10088879A
Other languages
Japanese (ja)
Inventor
Toshiaki Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10088879A priority Critical patent/JPS5624623A/en
Publication of JPS5624623A publication Critical patent/JPS5624623A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain the high voltage power-on-reset voltage by connecting the third and the fourth transistors TRs the same as the first and the second conductive type TRs to a common connecting point of the first and second TRs of different conductive type, and heightening the threshold voltage of the first TR more than the threshold voltage of the third TR.
CONSTITUTION: By P-FETP3 and N-FETN2 being the complementary type insulating gates FET, C-MOS circuit is constructed, and the resepctive drain and the gate of FETP3 are commonly connected to the contact 1', and the source of FETP3 and the gate of FETN3 are connected to the power source +Vcc. Further, the second gates of FETP3 and FETN3 are respectively connected to the power source Vcc and the earth. In addition, to the contact 1', the gates of P-EETP4 and NEET N4 constituting the inverter circuit are connected and the drains of FETP4 and FETN4 are commonly connected to the contact 2'. Also, the source and the second gate of FETP4 are connected to the power supply source Vcc, the source and the second gate of FETN4 are connected to the earth and the threshold voltage of FETP3 is set higher than that of FETP4.
COPYRIGHT: (C)1981,JPO&Japio
JP10088879A 1979-08-07 1979-08-07 Transistor device Pending JPS5624623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10088879A JPS5624623A (en) 1979-08-07 1979-08-07 Transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10088879A JPS5624623A (en) 1979-08-07 1979-08-07 Transistor device

Publications (1)

Publication Number Publication Date
JPS5624623A true JPS5624623A (en) 1981-03-09

Family

ID=14285859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10088879A Pending JPS5624623A (en) 1979-08-07 1979-08-07 Transistor device

Country Status (1)

Country Link
JP (1) JPS5624623A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183125A (en) * 1981-05-06 1982-11-11 Sanyo Electric Co Ltd Initializing circuit
JPS58196464A (en) * 1982-05-11 1983-11-15 Matsushita Electric Ind Co Ltd Voltage drop detection circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132265A (en) * 1974-07-11 1976-03-18 Philips Nv
JPS52144230A (en) * 1976-05-27 1977-12-01 Mitsubishi Electric Corp C-mos initial reset circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132265A (en) * 1974-07-11 1976-03-18 Philips Nv
JPS52144230A (en) * 1976-05-27 1977-12-01 Mitsubishi Electric Corp C-mos initial reset circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183125A (en) * 1981-05-06 1982-11-11 Sanyo Electric Co Ltd Initializing circuit
JPS58196464A (en) * 1982-05-11 1983-11-15 Matsushita Electric Ind Co Ltd Voltage drop detection circuit
JPH0437387B2 (en) * 1982-05-11 1992-06-19 Matsushita Electric Ind Co Ltd

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