JPS5624623A - Transistor device - Google Patents
Transistor deviceInfo
- Publication number
- JPS5624623A JPS5624623A JP10088879A JP10088879A JPS5624623A JP S5624623 A JPS5624623 A JP S5624623A JP 10088879 A JP10088879 A JP 10088879A JP 10088879 A JP10088879 A JP 10088879A JP S5624623 A JPS5624623 A JP S5624623A
- Authority
- JP
- Japan
- Prior art keywords
- fetp
- fetn
- gate
- source
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE: To obtain the high voltage power-on-reset voltage by connecting the third and the fourth transistors TRs the same as the first and the second conductive type TRs to a common connecting point of the first and second TRs of different conductive type, and heightening the threshold voltage of the first TR more than the threshold voltage of the third TR.
CONSTITUTION: By P-FETP3 and N-FETN2 being the complementary type insulating gates FET, C-MOS circuit is constructed, and the resepctive drain and the gate of FETP3 are commonly connected to the contact 1', and the source of FETP3 and the gate of FETN3 are connected to the power source +Vcc. Further, the second gates of FETP3 and FETN3 are respectively connected to the power source Vcc and the earth. In addition, to the contact 1', the gates of P-EETP4 and NEET N4 constituting the inverter circuit are connected and the drains of FETP4 and FETN4 are commonly connected to the contact 2'. Also, the source and the second gate of FETP4 are connected to the power supply source Vcc, the source and the second gate of FETN4 are connected to the earth and the threshold voltage of FETP3 is set higher than that of FETP4.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10088879A JPS5624623A (en) | 1979-08-07 | 1979-08-07 | Transistor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10088879A JPS5624623A (en) | 1979-08-07 | 1979-08-07 | Transistor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5624623A true JPS5624623A (en) | 1981-03-09 |
Family
ID=14285859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10088879A Pending JPS5624623A (en) | 1979-08-07 | 1979-08-07 | Transistor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5624623A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183125A (en) * | 1981-05-06 | 1982-11-11 | Sanyo Electric Co Ltd | Initializing circuit |
JPS58196464A (en) * | 1982-05-11 | 1983-11-15 | Matsushita Electric Ind Co Ltd | Voltage drop detection circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5132265A (en) * | 1974-07-11 | 1976-03-18 | Philips Nv | |
JPS52144230A (en) * | 1976-05-27 | 1977-12-01 | Mitsubishi Electric Corp | C-mos initial reset circuit |
-
1979
- 1979-08-07 JP JP10088879A patent/JPS5624623A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5132265A (en) * | 1974-07-11 | 1976-03-18 | Philips Nv | |
JPS52144230A (en) * | 1976-05-27 | 1977-12-01 | Mitsubishi Electric Corp | C-mos initial reset circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57183125A (en) * | 1981-05-06 | 1982-11-11 | Sanyo Electric Co Ltd | Initializing circuit |
JPS58196464A (en) * | 1982-05-11 | 1983-11-15 | Matsushita Electric Ind Co Ltd | Voltage drop detection circuit |
JPH0437387B2 (en) * | 1982-05-11 | 1992-06-19 | Matsushita Electric Ind Co Ltd |
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