JPS5623748A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5623748A JPS5623748A JP9974279A JP9974279A JPS5623748A JP S5623748 A JPS5623748 A JP S5623748A JP 9974279 A JP9974279 A JP 9974279A JP 9974279 A JP9974279 A JP 9974279A JP S5623748 A JPS5623748 A JP S5623748A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor
- annealing
- neutralize
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000137 annealing Methods 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To eliminate or reduce the density of recombination center or crystal defects in the semiconductor device by optically annealing the surface of semiconductor with laser or the like, and optically annealing it in atmosphere added with halogen element or inert gas to H2 or He activated. CONSTITUTION:An Si substrate is irradiated with CW laser of 70W power or the like to anneal the layer of approx. 3mu. Then, it is contained in an atmosphere added with 30-70% of He to H2 or H2, or with 0.1-3% of halogen element such as F or the like in furnace, and the furnace is excited by high frequency induction of 1-100MHz at -70 deg.C-+200 deg.C. The H of nascent state is immersed without any trouble to combine with Si or O2 existed in the semiconductor, insulator or their boundary to neutralize it. In this manner it is laser annealed, and then induction annealed to neutralize the defect which cannot be treated by the laser annealing in depth so as to improve the property of the device very effectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54099742A JPS588128B2 (en) | 1979-08-05 | 1979-08-05 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54099742A JPS588128B2 (en) | 1979-08-05 | 1979-08-05 | Semiconductor device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5623748A true JPS5623748A (en) | 1981-03-06 |
JPS588128B2 JPS588128B2 (en) | 1983-02-14 |
Family
ID=14255459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54099742A Expired JPS588128B2 (en) | 1979-08-05 | 1979-08-05 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS588128B2 (en) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166309A (en) * | 1981-03-31 | 1982-10-13 | Fujitsu Ltd | Production of amorphous silicon |
JPS5899114A (en) * | 1981-12-04 | 1983-06-13 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous silicon hydride film |
JPS58114423A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
US4402762A (en) * | 1981-06-02 | 1983-09-06 | John Puthenveetil K | Method of making highly stable modified amorphous silicon and germanium films |
JPS58182816A (en) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | Recrystallizing method of silicon family semiconductor material |
JPS6247116A (en) * | 1985-08-26 | 1987-02-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device manufacturing equipment |
JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6252924A (en) * | 1985-09-01 | 1987-03-07 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6254422A (en) * | 1985-08-08 | 1987-03-10 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6269608A (en) * | 1985-09-24 | 1987-03-30 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
US5024968A (en) * | 1988-07-08 | 1991-06-18 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
US5561088A (en) * | 1994-02-10 | 1996-10-01 | Sony Corporation | Heating method and manufacturing method for semiconductor device |
US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
US5739043A (en) * | 1992-03-25 | 1998-04-14 | Kanegafuchi Chemical Industry Co., Ltd. | Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
US6200872B1 (en) * | 1997-09-30 | 2001-03-13 | Fujitsu Limited | Semiconductor substrate processing method |
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
EP1306892A1 (en) * | 2000-07-11 | 2003-05-02 | Shin-Etsu Handotai Co., Ltd | Single crystal cutting method |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US7038302B2 (en) | 1993-10-12 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
-
1979
- 1979-08-05 JP JP54099742A patent/JPS588128B2/en not_active Expired
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166309A (en) * | 1981-03-31 | 1982-10-13 | Fujitsu Ltd | Production of amorphous silicon |
JPH0219185B2 (en) * | 1981-03-31 | 1990-04-27 | Fujitsu Ltd | |
US4402762A (en) * | 1981-06-02 | 1983-09-06 | John Puthenveetil K | Method of making highly stable modified amorphous silicon and germanium films |
JPS5899114A (en) * | 1981-12-04 | 1983-06-13 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous silicon hydride film |
JPH034622B2 (en) * | 1981-12-04 | 1991-01-23 | Matsushita Electric Ind Co Ltd | |
JPS58114423A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58182816A (en) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | Recrystallizing method of silicon family semiconductor material |
JPS6254422A (en) * | 1985-08-08 | 1987-03-10 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6247116A (en) * | 1985-08-26 | 1987-02-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device manufacturing equipment |
JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6252924A (en) * | 1985-09-01 | 1987-03-07 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6269608A (en) * | 1985-09-24 | 1987-03-30 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
US5024968A (en) * | 1988-07-08 | 1991-06-18 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US5739043A (en) * | 1992-03-25 | 1998-04-14 | Kanegafuchi Chemical Industry Co., Ltd. | Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film |
US7038302B2 (en) | 1993-10-12 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
US5561088A (en) * | 1994-02-10 | 1996-10-01 | Sony Corporation | Heating method and manufacturing method for semiconductor device |
US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
US6200872B1 (en) * | 1997-09-30 | 2001-03-13 | Fujitsu Limited | Semiconductor substrate processing method |
EP1306892A1 (en) * | 2000-07-11 | 2003-05-02 | Shin-Etsu Handotai Co., Ltd | Single crystal cutting method |
EP1306892A4 (en) * | 2000-07-11 | 2007-10-10 | Shinetsu Handotai Kk | Single crystal cutting method |
Also Published As
Publication number | Publication date |
---|---|
JPS588128B2 (en) | 1983-02-14 |
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