JPH03266424A - Annealing process of semiconductor substrate - Google Patents
Annealing process of semiconductor substrateInfo
- Publication number
- JPH03266424A JPH03266424A JP6403190A JP6403190A JPH03266424A JP H03266424 A JPH03266424 A JP H03266424A JP 6403190 A JP6403190 A JP 6403190A JP 6403190 A JP6403190 A JP 6403190A JP H03266424 A JPH03266424 A JP H03266424A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- irradiated
- carriers
- annealing
- wavelength radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000000137 annealing Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000005855 radiation Effects 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000000969 carrier Substances 0.000 abstract description 18
- 229910052736 halogen Inorganic materials 0.000 abstract description 17
- 150000002367 halogens Chemical class 0.000 abstract description 14
- 239000012535 impurity Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体基板のアニール方法であって、短波長
の輻射線と長波長の輻射線を併用する半導体基板のアニ
ール方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of annealing a semiconductor substrate, and more particularly, to a method of annealing a semiconductor substrate using both short wavelength radiation and long wavelength radiation.
本発明は、半導体基板のアニール方法において、ハロゲ
ンランプのような長波長の輻射線を照射する直前、また
は同時にエキシマレーザのような短波長の輻射線を照射
することを特徴とする半導体基板のアニール方法である
。短波長の輻射線照射によって半導体基板中のキャリア
を励起し、熱吸収特性を改善することによって、半導体
基板中の不純物濃度に依存しない均一なアニール効果を
実現する。The present invention provides a method for annealing a semiconductor substrate, which includes irradiating short wavelength radiation such as an excimer laser immediately before or simultaneously with irradiating long wavelength radiation such as a halogen lamp. It's a method. By exciting carriers in the semiconductor substrate by irradiating short-wavelength radiation and improving heat absorption characteristics, a uniform annealing effect that is independent of the impurity concentration in the semiconductor substrate is achieved.
〔従来の技術］
シリコン（以下Ｓｉという）やガリウム砒素等の半導体
基板に、高濃度のＮ型やＰ型の不純物イオンをイオン注
入法によって注入して、微細な半導体装置を形成するこ
とが多い。このイオン注入によって半導体基板中に注入
された不純物原子は、同時に多くの結晶欠陥や非晶質領
域を生成するので、アニールによって結晶性の回復を行
うとともに、不純物原子の電気的活性化をはかることが
行われている。[Prior art] Microscopic semiconductor devices are often formed by implanting highly concentrated N-type or P-type impurity ions into a semiconductor substrate such as silicon (hereinafter referred to as Si) or gallium arsenide using an ion implantation method. . The impurity atoms injected into the semiconductor substrate through this ion implantation simultaneously generate many crystal defects and amorphous regions, so annealing is used to restore crystallinity and electrically activate the impurity atoms. is being carried out.
従来、このアニールのための装置には、電気炉が用いら
れてきたが、半導体基板内の温度の均一化をはかるため
には、数十分程度の長時間を必要とし、さらに高い活性
化率を得るために高温で長時間のアニールが必要とされ
るため、注入した不純物原子の再拡散が生じ、微細で浅
い接合の形成等には適当でなかった。Conventionally, electric furnaces have been used as equipment for this annealing, but in order to equalize the temperature within the semiconductor substrate, it requires a long time of several tens of minutes, and even higher activation rates are required. Since long-time annealing at high temperature is required to obtain the 200 nm, re-diffusion of the implanted impurity atoms occurs, making it unsuitable for forming fine and shallow junctions.
最近、電気炉アニールにかわる短時間のアニール方法と
して、ハロゲンランプのような赤外線アニールが行われ
るようになってきた。Recently, infrared annealing using a halogen lamp has been used as a short-time annealing method to replace electric furnace annealing.
さらに、第３図に示すように、半導体基板１を保持板に
設置して、基板裏面に第１の窓４ａを通してハロゲンラ
ンプ２のような赤外線の照射を継続中に、基板表面に第
２の窓４ｂを通してエキシマレーザ３のような短波長の
輻射線を照射するようにして、ランプアニール温度を低
温化し、かつ短時間でのアニールを行う方法が提案され
ている（出願番号 平１−１１４０８８号）。Further, as shown in FIG. 3, the semiconductor substrate 1 is placed on a holding plate, and while the infrared rays from a halogen lamp 2 are being continuously irradiated through the first window 4a on the back side of the substrate, a second light is applied to the surface of the substrate. A method has been proposed in which the lamp annealing temperature is lowered and the annealing is performed in a short time by irradiating short wavelength radiation such as from an excimer laser 3 through the window 4b (Application No. 1-114088). ).
前述のハロゲンランプの照射中に、エキシマレーザの照
射を併用すれば、比較的低温度で短時間のアニールで結
晶性の回復において結晶の二次欠陥の発生がなく、不純
物原子の活性化において再拡散や増速拡散のない浅い接
合を形成することができるが、第２図に示すように、通
常使用されているタングステンハロゲンランプの発光強
度の下限と、半導体基板が熱吸収するＳｉの基礎吸収帯
の上限の波長に囲まれる領域が小さいので、輻射による
熱吸収は少なく、半導体基板中のフリーキャリアによっ
て吸収される熱吸収に影響される。半導体基板が高温で
あればキャリアが励起されてフリーキャリアが多く発生
するので不純物濃度に依存しないが、アニール開始直後
の常温付近では、フリーキャリアの濃度は半導体基板内
でも半導体基板間でも異なり、熱吸収の割合も異なるの
で、半導体基板の温度上昇特性は、その都度具なってし
まう。一方、短波長の発光を有するキセノンアークラン
プもあるが、ランプ自体が高価で、かつ水冷しないと寿
命が短く実用性に乏しい。If excimer laser irradiation is used in conjunction with the halogen lamp irradiation described above, the annealing at a relatively low temperature and short time will restore crystallinity without generating secondary defects in the crystal, and will activate impurity atoms again. Although it is possible to form shallow junctions without diffusion or accelerated diffusion, as shown in Figure 2, the lower limit of the emission intensity of the commonly used tungsten-halogen lamp and the fundamental absorption of Si, which absorbs heat from the semiconductor substrate, Since the region surrounded by the upper limit wavelength of the band is small, there is little heat absorption due to radiation, and it is influenced by heat absorption absorbed by free carriers in the semiconductor substrate. If the semiconductor substrate is at a high temperature, carriers are excited and many free carriers are generated, so it does not depend on the impurity concentration.However, at room temperature immediately after the start of annealing, the concentration of free carriers differs both within and between semiconductor substrates, and heat Since the rate of absorption also differs, the temperature rise characteristics of the semiconductor substrate vary each time. On the other hand, there are xenon arc lamps that emit light with short wavelengths, but the lamps themselves are expensive and have short lifespans unless water-cooled, making them impractical.
前記課題を達成するため、本発明は半導体基板のアニー
ルの初期に、キャリアを十分励起するために短波長の輻
射線を照射してフリーキャリアを発生させて後ランプア
ニール等長波長の輻射線の照射を行うことによって、半
導体基板内及び半導体基板間のアニール効果の均一化を
はかろうとするものである。In order to achieve the above object, the present invention generates free carriers by irradiating short-wavelength radiation to sufficiently excite carriers at the beginning of annealing a semiconductor substrate, and then irradiates the semiconductor substrate with long-wavelength radiation such as after lamp annealing. By performing irradiation, an attempt is made to make the annealing effect uniform within the semiconductor substrate and between the semiconductor substrates.
長波長の輻射線を照射する直前、または同時に短波長の
輻射線を照射すれば、Ｓｉの基礎吸収帯のうち十分熱吸
収の行われる領域で短波長の輻射線を照射するので、Ｓ
ｉ中の不純物濃度に依存しないでフリーキャリアを多数
発生させることができて、その後の長波長の輻射線の照
射による熱吸収が均一に行われる。If short-wavelength radiation is irradiated immediately before or at the same time as long-wavelength radiation, the short-wavelength radiation will be irradiated in the region of the fundamental absorption band of Si where sufficient heat absorption occurs, so that S
A large number of free carriers can be generated without depending on the impurity concentration in i, and heat absorption by subsequent irradiation with long wavelength radiation is performed uniformly.
本発明の実施例を、第１図を用いて説明する。 An embodiment of the present invention will be described with reference to FIG.
半導体基板に、ハロゲンランプ照射１１を開始すると同
時に、エキシマレーザ照射１２を開始する。エキシマレ
ーザ照射１２の開始時間は、ハロゲンランプ照射１１の
開始より早くてもよい。エキシマレーザ照射１２を半導
体基板に照射すると、表面のみ温度が上昇してキャリア
を励起する。キャリアが励起されてフリーキャリアが発
生すると同時に、あるいは直後にハロゲンランプ照射１
１を開始すれば、半導体基板の温度上昇は不純物濃度に
依存せず、均一なアニール効果が得られる。At the same time as halogen lamp irradiation 11 is started, excimer laser irradiation 12 is started on the semiconductor substrate. The start time of excimer laser irradiation 12 may be earlier than the start time of halogen lamp irradiation 11. When the semiconductor substrate is irradiated with excimer laser irradiation 12, the temperature rises only on the surface and excites carriers. Halogen lamp irradiation 1 at the same time or immediately after carriers are excited and free carriers are generated.
1, the temperature rise of the semiconductor substrate does not depend on the impurity concentration, and a uniform annealing effect can be obtained.
本発明におけるエキシマレーザは、キャリアを励起する
ためのものであり、Ｓｉの基礎吸収帯、すなわち１ミク
ロン以下の短波長の輻射線であればよく、例えば蛍光灯
や水銀ランプ等を光ファイバやミラーを用いて設置して
もよい。また、ハロゲンランプによる照射は半導体裏面
のみならず両面を加熱してもよい。The excimer laser in the present invention is for exciting carriers, and any radiation in the fundamental absorption band of Si, that is, short wavelength of 1 micron or less, is sufficient. It may also be installed using Furthermore, the irradiation with a halogen lamp may heat not only the back surface of the semiconductor but also both surfaces.
本発明による半導体基板のアニール方法を用いれば、始
めに半導体基板中のキャリアを短波長の輻射線を照射し
て励起させて後、ハロゲンランプ等の長波長の輻射線を
照射するので、半導体基板の初期の温度上昇が不純物濃
度に依存せず均一なアニール効果が得られる。When using the method of annealing a semiconductor substrate according to the present invention, carriers in the semiconductor substrate are first excited by irradiating short wavelength radiation, and then long wavelength radiation such as a halogen lamp is irradiated, so that the semiconductor substrate The initial temperature rise does not depend on the impurity concentration, and a uniform annealing effect can be obtained.
第１図は本発明のアニール方法を示す図、第２図はダン
ゲステンハロゲンランプの発光強度とＳｔの基礎吸収帯
を示す図、第３図は従来のアニール装置の概略断面図で
ある。
ｉ −−−−−−・−一−−−−・・半導体基板２−・
・−一−−−−−−−・ハロゲンランプ３・・−−−一
−−−−・−エキシマレーザ４ａ・・−−−−一・−第
１の照射窓
４ ｂ−−−−−−−−−−−一第２の照射窓１１・・
−一一−−−−−−−−−−ハロゲンランプ照射１２−
−−−−−−−−−・−エキシマレーザ照射相対的時間
→
１．０ ２．０ ３．０
波長（ミクロン）
！２図タンク゛′λテンハロゲンランフの余光強度とＳ
ｉの基礎吸収帯と示す聞FIG. 1 is a diagram showing the annealing method of the present invention, FIG. 2 is a diagram showing the emission intensity of a Dungesten halogen lamp and the fundamental absorption band of St, and FIG. 3 is a schematic cross-sectional view of a conventional annealing apparatus. i ----------1----- Semiconductor substrate 2-
-1-------Halogen lamp 3...--1-------Excimer laser 4a...--1--First irradiation window 4 b---- ------First and second irradiation windows 11...
-11--------Halogen lamp irradiation 12-
−−−−−−−−−・−Relative time of excimer laser irradiation → 1.0 2.0 3.0 Wavelength (microns) ! Figure 2 Afterglow intensity and S of tank ゛'λ ten halogen lamp
The fundamental absorption band of i
Claims (1)
ニールする方法において、長波長の輻射線を照射する直
前、または同時に短波長の輻射線を照射することを特徴
とする半導体基板のアニール方法。A method of annealing a semiconductor substrate by irradiating a semiconductor substrate with radiation of two different wavelengths, the method comprising irradiating a semiconductor substrate with radiation of a short wavelength immediately before or at the same time as irradiating the radiation with a long wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6403190A JPH03266424A (en) | 1990-03-16 | 1990-03-16 | Annealing process of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6403190A JPH03266424A (en) | 1990-03-16 | 1990-03-16 | Annealing process of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03266424A true JPH03266424A (en) | 1991-11-27 |
Family
ID=13246353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6403190A Pending JPH03266424A (en) | 1990-03-16 | 1990-03-16 | Annealing process of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03266424A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6239413B1 (en) | 1998-11-13 | 2001-05-29 | Nec Corporation | Light irradiation annealing apparatus having infrared radiation cut filter |
| JP2004356322A (en) * | 2003-05-28 | 2004-12-16 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device and semiconductor manufacturing device |
| JP2005210129A (en) * | 2004-01-22 | 2005-08-04 | Ultratech Inc | Laser thermal annealing of lightly-doped silicon substrates |
| WO2005106935A1 (en) * | 2004-04-28 | 2005-11-10 | Emd Corporation | Solid sample surface quality modification method, impurities activation method, and semiconductor device manufacturing method |
| JP2006279013A (en) * | 2005-03-03 | 2006-10-12 | Nec Electronics Corp | Method of manufacturing field-effect transistor |
| US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| JP2007261869A (en) * | 2006-03-28 | 2007-10-11 | Brother Ind Ltd | Method for forming ceramic film and annealing apparatus |
| WO2007116917A1 (en) * | 2006-04-05 | 2007-10-18 | F.T.L. Co., Ltd. | Production method for 3-d semiconductor device |
| US7368769B2 (en) | 2004-07-23 | 2008-05-06 | Samsung Electronics Co., Ltd. | MOS transistor having a recessed gate electrode and fabrication method thereof |
| US7485554B2 (en) | 2003-09-22 | 2009-02-03 | Samsung Electronics Co., Ltd. | Method of increasing a free carrier concentration in a semiconductor substrate |
| US7494942B2 (en) | 2003-09-29 | 2009-02-24 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| JP2011014914A (en) * | 2010-07-20 | 2011-01-20 | Emd:Kk | Impurity activation method, and semiconductor device manufacturing method |
| JP2012503311A (en) * | 2008-09-17 | 2012-02-02 | アプライド マテリアルズ インコーポレイテッド | Control of heat during substrate annealing |
| JP2012231158A (en) * | 2003-09-29 | 2012-11-22 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
-
1990
- 1990-03-16 JP JP6403190A patent/JPH03266424A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7410850B2 (en) | 1997-03-11 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| US6239413B1 (en) | 1998-11-13 | 2001-05-29 | Nec Corporation | Light irradiation annealing apparatus having infrared radiation cut filter |
| JP2004356322A (en) * | 2003-05-28 | 2004-12-16 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device and semiconductor manufacturing device |
| US7485554B2 (en) | 2003-09-22 | 2009-02-03 | Samsung Electronics Co., Ltd. | Method of increasing a free carrier concentration in a semiconductor substrate |
| JP2012231158A (en) * | 2003-09-29 | 2012-11-22 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
| US7494942B2 (en) | 2003-09-29 | 2009-02-24 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| JP2005210129A (en) * | 2004-01-22 | 2005-08-04 | Ultratech Inc | Laser thermal annealing of lightly-doped silicon substrates |
| JP2005317767A (en) * | 2004-04-28 | 2005-11-10 | Japan Science & Technology Agency | Method of reforming surface of solid sample, impurity activating method and manufacturing method of semiconductor device |
| WO2005106935A1 (en) * | 2004-04-28 | 2005-11-10 | Emd Corporation | Solid sample surface quality modification method, impurities activation method, and semiconductor device manufacturing method |
| US7368769B2 (en) | 2004-07-23 | 2008-05-06 | Samsung Electronics Co., Ltd. | MOS transistor having a recessed gate electrode and fabrication method thereof |
| JP2006279013A (en) * | 2005-03-03 | 2006-10-12 | Nec Electronics Corp | Method of manufacturing field-effect transistor |
| JP2007261869A (en) * | 2006-03-28 | 2007-10-11 | Brother Ind Ltd | Method for forming ceramic film and annealing apparatus |
| WO2007116917A1 (en) * | 2006-04-05 | 2007-10-18 | F.T.L. Co., Ltd. | Production method for 3-d semiconductor device |
| JP2012503311A (en) * | 2008-09-17 | 2012-02-02 | アプライド マテリアルズ インコーポレイテッド | Control of heat during substrate annealing |
| JP2011014914A (en) * | 2010-07-20 | 2011-01-20 | Emd:Kk | Impurity activation method, and semiconductor device manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5633174A (en) | Type silicon material with enhanced surface mobility | |
| US7579654B2 (en) | Semiconductor on insulator structure made using radiation annealing | |
| US9839976B2 (en) | Annealing apparatus using two wavelengths of radiation | |
| JP3910603B2 (en) | Heat treatment apparatus, heat treatment method, and semiconductor device manufacturing method | |
| JPH03266424A (en) | Annealing process of semiconductor substrate | |
| JP3190653B2 (en) | Annealing method and annealing device | |
| US4659422A (en) | Process for producing monocrystalline layer on insulator | |
| JPS58223320A (en) | Diffusing method for impurity | |
| JPH01187814A (en) | Manufacture of thin film semiconductor device | |
| JP3669384B2 (en) | Method for forming a doping layer in a semiconductor substrate | |
| US20070141817A1 (en) | Non-thermal annealing of doped semiconductor material | |
| US6383902B1 (en) | Method for producing a microelectronic semiconductor component | |
| JPS59211221A (en) | Heat treatment of ion implanted semiconductor | |
| JP2002222773A (en) | Method for manufacturing nitride semiconductor wafer | |
| US6423605B1 (en) | Method and apparatus for forming ultra-shallow junction for semiconductor device | |
| JP5013235B2 (en) | Ion implantation apparatus and ion implantation method | |
| JP2813990B2 (en) | Method for manufacturing electronic device using boron nitride | |
| JPH0817577A (en) | Luminescence silicon material and its formation method as well as treatment method of luminescence base material and electroluminescence device | |
| JPS60239400A (en) | Process for annealing compound semiconductor | |
| KR100777198B1 (en) | Wafer processing method, semiconductor device manufacturing method, and wafer processing apparatus | |
| JPH05206053A (en) | Crystal damage remover | |
| JPS63271922A (en) | Heat treatment device | |
| JPS5897837A (en) | Light irradiation annealing method and device therefor | |
| JPS61218131A (en) | Manufacture of semiconductor device | |
| JPH07118444B2 (en) | Heat treatment method for semiconductor thin film |