JPS56137668A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56137668A
JPS56137668A JP4020980A JP4020980A JPS56137668A JP S56137668 A JPS56137668 A JP S56137668A JP 4020980 A JP4020980 A JP 4020980A JP 4020980 A JP4020980 A JP 4020980A JP S56137668 A JPS56137668 A JP S56137668A
Authority
JP
Japan
Prior art keywords
type
power supply
substrate
epitaxial layer
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4020980A
Other languages
Japanese (ja)
Inventor
Shozo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4020980A priority Critical patent/JPS56137668A/en
Priority to US06/247,156 priority patent/US4476479A/en
Priority to DE8181102341T priority patent/DE3162083D1/en
Priority to EP81102341A priority patent/EP0037103B1/en
Publication of JPS56137668A publication Critical patent/JPS56137668A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide high-density CMOSIC by preparing a reciprocal compensating- type FET in an epitaxial layer region of an inverse electroconductive type and a substrate and applying a power supply voltage to the substrate so that a surfacial power supply wiring may be eliminated. CONSTITUTION:For instance, P type epitaxial layer 101 is built up on N type substrate 100 to provide N type well 102. Then ''P'' channel-type FET and N channel-type FET are provided in N type well 102 region and ''P'' type epitaxial layer 101 region respectively to constitute a CMOS structure. Under this structure, if for instance, an inverter circuit is constituted, it is necessary to earth a source 106 and connect gates 109, 110 to an input 112, drains 103, 105 to an output 111 and N type substrate 100 to a power supply 113 respectively. In this circuit, it is so structurally designed that NPN transistor consisting of a substrate, an epitaxial layer and a well may be switched on at a power supply voltage. Consequently, a voltage is generated even without the connection of a power supply 113 to the N type well 102. Thus it is possible to dispense with a power supply wiring and therefore, provide a high-density integration with no necessity to increase manhours.
JP4020980A 1980-03-31 1980-03-31 Semiconductor device Pending JPS56137668A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4020980A JPS56137668A (en) 1980-03-31 1980-03-31 Semiconductor device
US06/247,156 US4476479A (en) 1980-03-31 1981-03-24 Semiconductor device with operating voltage coupling region
DE8181102341T DE3162083D1 (en) 1980-03-31 1981-03-27 Semiconductor device
EP81102341A EP0037103B1 (en) 1980-03-31 1981-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4020980A JPS56137668A (en) 1980-03-31 1980-03-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56137668A true JPS56137668A (en) 1981-10-27

Family

ID=12574384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4020980A Pending JPS56137668A (en) 1980-03-31 1980-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56137668A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170048A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS59210660A (en) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing cmos device
JPS61125071A (en) * 1984-11-21 1986-06-12 Toshiba Corp Complementary type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170048A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor device
JPS59210660A (en) * 1983-02-23 1984-11-29 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing cmos device
JPS61125071A (en) * 1984-11-21 1986-06-12 Toshiba Corp Complementary type semiconductor device

Similar Documents

Publication Publication Date Title
EP0578821A4 (en) Semiconductor device
JPS55136726A (en) High voltage mos inverter and its drive method
EP0187697A3 (en) Balanced cmos logic circuits
JPS5516539A (en) Level shifter circuit
JPS6471219A (en) Buffer circuit and integrated circuit structure
ATE74453T1 (en) INTEGRATED CIRCUIT USING COMPLEMENTARY CIRCUIT TECHNOLOGY WITH A SUBSTRATE PRE-VOLTAGE GENERATOR.
JPS56137668A (en) Semiconductor device
GB1483169A (en) Inverters
EP0242523A3 (en) Integrated driving stage for a fet logic circuit
ATE66105T1 (en) CURRENT MIRROR CIRCUIT ARRANGEMENT.
JPS5548957A (en) Semiconductor logic element
JPS57157638A (en) Phase inversion changeover circuit
JPS5748833A (en) Gate circuit
JPS57181231A (en) Semiconductor integrated circuit
JPS57203334A (en) Semiconductor integrated circuit device
DE3581842D1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS.
JPS57180159A (en) Mos integrated circuit device
JPS5649556A (en) Mos integrated circuit
JPS57183119A (en) Schmitt circuit
JPS5739566A (en) Semiconductor device
JPS6489817A (en) Logic circuit
JPS54119653A (en) Constant voltage generating circuit
JPS5624623A (en) Transistor device
JPS5767333A (en) Mos integrated circuit
JPS5648720A (en) Inductive load driving circuit