JPS56133825A - Electron beam device - Google Patents
Electron beam deviceInfo
- Publication number
- JPS56133825A JPS56133825A JP3583480A JP3583480A JPS56133825A JP S56133825 A JPS56133825 A JP S56133825A JP 3583480 A JP3583480 A JP 3583480A JP 3583480 A JP3583480 A JP 3583480A JP S56133825 A JPS56133825 A JP S56133825A
- Authority
- JP
- Japan
- Prior art keywords
- current
- bias
- electron beam
- electron
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To easily establish the uniformity of beam intensity by obtaining the control value of a bias resistance or a bias voltage in accordance with a beam current under the condition that the intensity distribution and the luminance of an electron beam or beam dimensions are fixed. CONSTITUTION:An electron gun 1 is composed of an LaB monocrystal chip 1a and a Wenhnelt 1b which are arranged by opposing to a positive electrode 2. The electron gun 1 is energized by a high-voltage power source 3 and heated by a heater power source 4 to establish the bias by a resistance circuit 5. A current detector 6 detects an operating current IR. A gold narrow wire 24 and a Faraday cup 26 measuring the intensity distribution and the dimensions of an electron beam are provided at the position of a sample surface and an electron beam current is detected. A bias resistance is adjusted by detecting the beam current after applying deflecting scan to the electron beam and by calculating the optimum bias from a change in current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3583480A JPS56133825A (en) | 1980-03-21 | 1980-03-21 | Electron beam device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3583480A JPS56133825A (en) | 1980-03-21 | 1980-03-21 | Electron beam device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56133825A true JPS56133825A (en) | 1981-10-20 |
JPH0450732B2 JPH0450732B2 (en) | 1992-08-17 |
Family
ID=12452989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3583480A Granted JPS56133825A (en) | 1980-03-21 | 1980-03-21 | Electron beam device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56133825A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053001A (en) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | Charged particle beam device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140982A (en) * | 1974-10-02 | 1976-04-06 | Nippon Electron Optics Lab | Denshipuroobusochi niokeru biimuanteikasochi |
JPS5489579A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Electron ray exposure system |
JPS54100263A (en) * | 1978-01-24 | 1979-08-07 | Jeol Ltd | Electron beam exposure device |
JPS556829A (en) * | 1978-06-29 | 1980-01-18 | Fujitsu Ltd | Electron beam exposure method |
-
1980
- 1980-03-21 JP JP3583480A patent/JPS56133825A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140982A (en) * | 1974-10-02 | 1976-04-06 | Nippon Electron Optics Lab | Denshipuroobusochi niokeru biimuanteikasochi |
JPS5489579A (en) * | 1977-12-27 | 1979-07-16 | Toshiba Corp | Electron ray exposure system |
JPS54100263A (en) * | 1978-01-24 | 1979-08-07 | Jeol Ltd | Electron beam exposure device |
JPS556829A (en) * | 1978-06-29 | 1980-01-18 | Fujitsu Ltd | Electron beam exposure method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053001A (en) * | 2006-08-23 | 2008-03-06 | Sii Nanotechnology Inc | Charged particle beam device |
Also Published As
Publication number | Publication date |
---|---|
JPH0450732B2 (en) | 1992-08-17 |
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