JPS56130647A - Ion sensor - Google Patents

Ion sensor

Info

Publication number
JPS56130647A
JPS56130647A JP3389880A JP3389880A JPS56130647A JP S56130647 A JPS56130647 A JP S56130647A JP 3389880 A JP3389880 A JP 3389880A JP 3389880 A JP3389880 A JP 3389880A JP S56130647 A JPS56130647 A JP S56130647A
Authority
JP
Japan
Prior art keywords
film
layer
ion
impurity
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3389880A
Other languages
Japanese (ja)
Other versions
JPS6319816B2 (en
Inventor
Kazumuki Yanagisawa
Takashi Mizusaki
Masayuki Matsuo
Masaki Esashi
Hiroshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP3389880A priority Critical patent/JPS56130647A/en
Priority to GB8021027A priority patent/GB2072418B/en
Priority to US06/163,792 priority patent/US4446474A/en
Priority to FR8014342A priority patent/FR2478880A1/en
Priority to DE3024295A priority patent/DE3024295C2/en
Publication of JPS56130647A publication Critical patent/JPS56130647A/en
Publication of JPS6319816B2 publication Critical patent/JPS6319816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

PURPOSE:To hold an ion sensing matter stably, by forming an impurity layer including an impurity, which is sensitive to specific ions, in the surface layer of a film consisting of an inorganic matter which is formed on a gate insulating film of a field effect semiconductor. CONSTITUTION:In ISFET40, drain diffusion region 42 and the source diffusion region are formed in semiconductor substance 41 of approximately 200mum thickness to form channel region 44. Gate insulating film 45 and surface stabilizing film 46 are provided on the outside circumference of substance 41 in order by adhesion, and impurity layer 47 which functions as the ion sensing region sensitive to specific ions is provided in the surface layer of surface stabilizing film 46 of the top layer by thermal diffusion or ion implantation, and gate part 48 is constituted. This surface stabilizing film 46 is the composite consisting of ion unpermeable inorganic insulating materials such as oxides and nitrides of Al or Ta, Si3N4 and SiOxNy, and defects and electric charge accumulation in the junction face are not generated because the impurity layer is provided in the surface layer of this inorganic film.
JP3389880A 1980-03-19 1980-03-19 Ion sensor Granted JPS56130647A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3389880A JPS56130647A (en) 1980-03-19 1980-03-19 Ion sensor
GB8021027A GB2072418B (en) 1980-03-19 1980-06-26 Ion sensor and method of manufacturing the same
US06/163,792 US4446474A (en) 1980-03-19 1980-06-27 Ion sensor FET with surface treated metal gate
FR8014342A FR2478880A1 (en) 1980-03-19 1980-06-27 ION SENSOR AND METHOD FOR MANUFACTURING THE SAME
DE3024295A DE3024295C2 (en) 1980-03-19 1980-06-27 Ion probes and methods of making them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3389880A JPS56130647A (en) 1980-03-19 1980-03-19 Ion sensor

Publications (2)

Publication Number Publication Date
JPS56130647A true JPS56130647A (en) 1981-10-13
JPS6319816B2 JPS6319816B2 (en) 1988-04-25

Family

ID=12399342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3389880A Granted JPS56130647A (en) 1980-03-19 1980-03-19 Ion sensor

Country Status (1)

Country Link
JP (1) JPS56130647A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442630U (en) * 1990-08-10 1992-04-10

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126891A (en) * 1975-04-28 1976-11-05 Eiji Niki Ion selective electrode with semiconductor crystal as the sensitive el ement
JPS51139289A (en) * 1975-03-12 1976-12-01 Univ Utah Chemically sensitive fe converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139289A (en) * 1975-03-12 1976-12-01 Univ Utah Chemically sensitive fe converter
JPS51126891A (en) * 1975-04-28 1976-11-05 Eiji Niki Ion selective electrode with semiconductor crystal as the sensitive el ement

Also Published As

Publication number Publication date
JPS6319816B2 (en) 1988-04-25

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