JPS56112777A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS56112777A JPS56112777A JP1582380A JP1582380A JPS56112777A JP S56112777 A JPS56112777 A JP S56112777A JP 1582380 A JP1582380 A JP 1582380A JP 1582380 A JP1582380 A JP 1582380A JP S56112777 A JPS56112777 A JP S56112777A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base
- xalxas
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain converging directional emitting light from the semicondoctor light emitting device by increasing the diameter of a clad layer larger than an active layer, forming a reverse conductivity semiconductor layer as a base and sufficiently enclosing a current. CONSTITUTION:This device has a base of three layers having an N type GaAs substrate 21, an N type Ga1-xAlxAs layer 22 and a P type Ga1-xAlxAs layer 23, an N type Ga1-xAlxAs (0<=x<=1) clad layer 25 inserted into the hole of the base, a P type Ga1-yAlyAs (y<x, 0<=y<=0.4) active layer 26 formed above the surface of the base with hetero junction with the layer 25, and a P type Ga1-xAlxAs clad layer 27 formed on the layer 26 as hetero junction structure, and the diameter of the projection at the base side of the layer 25 is larger than that of the active layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1582380A JPS56112777A (en) | 1980-02-12 | 1980-02-12 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1582380A JPS56112777A (en) | 1980-02-12 | 1980-02-12 | Semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56112777A true JPS56112777A (en) | 1981-09-05 |
Family
ID=11899565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1582380A Pending JPS56112777A (en) | 1980-02-12 | 1980-02-12 | Semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56112777A (en) |
-
1980
- 1980-02-12 JP JP1582380A patent/JPS56112777A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS57139976A (en) | Light emitting/receiving device | |
JPS56112777A (en) | Semiconductor light emitting device | |
JPS57111076A (en) | Semiconductor light-emitting device | |
JPS5642388A (en) | Semiconductor light emitting device | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS56142691A (en) | Semiconductor light emitting device | |
JPS5779685A (en) | Light emitting diode device | |
JPS52135282A (en) | Semiconductor light emitting device | |
JPS5591892A (en) | Semiconductor laser light emission device | |
JPS537187A (en) | Production of semiconductor laser device | |
JPS5376692A (en) | Semiconductor light emitting device | |
JPS5642390A (en) | Formation of electrode on semiconductor device | |
JPS5413284A (en) | Semiconductor light emitting device | |
JPS54102993A (en) | Optical semiconductor device | |
JPS5370769A (en) | Production of semiconductor device | |
JPS5287988A (en) | High dielectric strength semiconductor device | |
JPS5580386A (en) | Manufacture of semiconductor light emitting device | |
JPS52147088A (en) | Light emitting device | |
JPS57113242A (en) | Marking device for semiconductor wafer | |
JPS5356987A (en) | Semiconductor laser device | |
JPS5565483A (en) | Manufacture of semiconductor light emitting element | |
JPS52144988A (en) | Semiconductor light emitting element | |
JPS5511370A (en) | Semiconductor laser system | |
JPS5271995A (en) | Light emitting element |