JPS56111244A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56111244A
JPS56111244A JP1359280A JP1359280A JPS56111244A JP S56111244 A JPS56111244 A JP S56111244A JP 1359280 A JP1359280 A JP 1359280A JP 1359280 A JP1359280 A JP 1359280A JP S56111244 A JPS56111244 A JP S56111244A
Authority
JP
Japan
Prior art keywords
layer
main surface
gettering
semiconductor device
damage layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1359280A
Other languages
Japanese (ja)
Inventor
Yutaka Etsuno
Kuniaki Kumamaru
Shunichi Kai
Jiro Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1359280A priority Critical patent/JPS56111244A/en
Publication of JPS56111244A publication Critical patent/JPS56111244A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To make it possible to perform a uniform gettering, by forming a damage layer in an isolation region or a dicing region on a main surface of a semiconductor device. CONSTITUTION:An N<-> epitaxial layer on a P type Si substrate having an N<+> type buried layer is isolated by BSG layer 4. The layer 4 is coated with resist film and etched for an opening 5 by B ion implantation and a damage layer 6 is formed. Then it is covered by an oxide film to form a bi-polar IC thereon by employing the existing method. With such an arrangement, unlike the hitherto method the damage layer is formed on the main surface of the device during the preparation process. And because the gettering direction is parallel with the main surface, the uniform gettering can be performed regardless of the thickness of the wafer or the disposition in the water. Thus the scattering of the properties between each lot is decreased.
JP1359280A 1980-02-08 1980-02-08 Preparation of semiconductor device Pending JPS56111244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1359280A JPS56111244A (en) 1980-02-08 1980-02-08 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1359280A JPS56111244A (en) 1980-02-08 1980-02-08 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111244A true JPS56111244A (en) 1981-09-02

Family

ID=11837462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1359280A Pending JPS56111244A (en) 1980-02-08 1980-02-08 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111244A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196740A (en) * 1984-10-18 1986-05-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6373528A (en) * 1986-09-16 1988-04-04 Nec Corp Gettering structure of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196740A (en) * 1984-10-18 1986-05-15 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6373528A (en) * 1986-09-16 1988-04-04 Nec Corp Gettering structure of semiconductor device

Similar Documents

Publication Publication Date Title
JPS57196573A (en) Manufacture of mos type semiconductor device
US4662059A (en) Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces
JPS56111244A (en) Preparation of semiconductor device
JPS56146247A (en) Manufacture of semiconductor device
JPS57162444A (en) Manufacture of semiconductor device
JPS6472523A (en) Manufacture of semiconductor device
JPS57109353A (en) Semiconductor device
JPS57130448A (en) Manufacture of semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS6467935A (en) Manufacture of semiconductor device
JPS568827A (en) Semiconductor device
JPS56135970A (en) Semiconductor device
JPS5676534A (en) Manufacture of semiconductor device
JPS57180143A (en) Manufacture of semiconductor device
JPS57103328A (en) Semiconductor and manufacture thereof
JPS57173956A (en) Manufacture of semiconductor device
JPS5670669A (en) Longitudinal semiconductor device
JPS57173972A (en) Manufacture of semiconductor ic device
JPS57170539A (en) Manufacture of semiconductor device
JPS55102269A (en) Method of fabricating semiconductor device
JPS564282A (en) Semiconductor device
JPS5635431A (en) Method of forming insulator isolation
JPS56133835A (en) Manufacture of semiconductor device
JPS5243369A (en) Flat etching method for silicon
JPS55115330A (en) Manufacturing method of semiconductor device