JPS56105654A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56105654A
JPS56105654A JP897180A JP897180A JPS56105654A JP S56105654 A JPS56105654 A JP S56105654A JP 897180 A JP897180 A JP 897180A JP 897180 A JP897180 A JP 897180A JP S56105654 A JPS56105654 A JP S56105654A
Authority
JP
Japan
Prior art keywords
alumina
mask
wiring
nonperforated
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP897180A
Other languages
Japanese (ja)
Inventor
Shinichi Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP897180A priority Critical patent/JPS56105654A/en
Publication of JPS56105654A publication Critical patent/JPS56105654A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent entry of moisture by attaching the second metal wiring to the first metal wiring, selectively oxidizing the second wiring layer and obtaining a junction pad. CONSTITUTION:An Al wiring 1 is mounted on an SiO2 film 4 of an Si substrate 5. The second Al film 6 is vacuum-evaporated and anode-oxidized to form a porus alumina 8. A resist mask 10 is applied to form a solid alumina 9 using an electrolyte causing the alumina not to be corroded, for example, a solution is which foric acid ammonium is saturated in ethylene glycol. The resist is removed and the second Al layer 7 is changed to the porous alumina 8 with the nonperforated alumina 9 being anode-oxidized as the mask. The resist mask 10 is applied again to cause the nonperforated alumina 9 to be removed, and when the mask 10 is removed, the gapless semiconductor device can be obtained of which pad means only is made thick and of which alumina and Al are continued, the entrance of the moisture being prevented and the reliability being improved.
JP897180A 1980-01-28 1980-01-28 Semiconductor device Pending JPS56105654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP897180A JPS56105654A (en) 1980-01-28 1980-01-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP897180A JPS56105654A (en) 1980-01-28 1980-01-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56105654A true JPS56105654A (en) 1981-08-22

Family

ID=11707564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP897180A Pending JPS56105654A (en) 1980-01-28 1980-01-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105654A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0079459A2 (en) * 1981-10-13 1983-05-25 Siemens Aktiengesellschaft Method of manufacturing a metallisation on a semiconductor device
WO1995008841A1 (en) * 1993-09-20 1995-03-30 Labunov Vladimir A Process for making multilevel interconnections of electronic components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0079459A2 (en) * 1981-10-13 1983-05-25 Siemens Aktiengesellschaft Method of manufacturing a metallisation on a semiconductor device
WO1995008841A1 (en) * 1993-09-20 1995-03-30 Labunov Vladimir A Process for making multilevel interconnections of electronic components

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