JPS5597466A - Ion nitride-production unit - Google Patents

Ion nitride-production unit

Info

Publication number
JPS5597466A
JPS5597466A JP360979A JP360979A JPS5597466A JP S5597466 A JPS5597466 A JP S5597466A JP 360979 A JP360979 A JP 360979A JP 360979 A JP360979 A JP 360979A JP S5597466 A JPS5597466 A JP S5597466A
Authority
JP
Japan
Prior art keywords
filaments
positive
power supply
vacuum chamber
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP360979A
Other languages
Japanese (ja)
Inventor
Kyoyu Sasanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP360979A priority Critical patent/JPS5597466A/en
Publication of JPS5597466A publication Critical patent/JPS5597466A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Abstract

PURPOSE:To obtain a mirror bright, hard quality, nitride layer in a short period using increased plasma concentration at a low temperature by a method wherein filament is insralled in the vacuum chamber in an ion nitrification unit and another power supply is used to heat to discharge thermoelectron. CONSTITUTION:The vacuum chamber 11 is evacuated, and a mixed gas of N2: H2=3:1 is introduced from plural bombs 19 into the chamber to a pressure of about 3 Torr. The object 14 to be treated such as grind-finished watch band is connected to the cathode of D.C. power supply 15, the vacuum chamber is connected to the positive, and 150V is applied. The power supply 16 for filaments 18 can connect to either positive or negative of the D.C. supply 15 via switch 17. Then, the power 16 and switch 17 are adjusted to apply 350V, with the filaments 18 negative and the object 14 positive. Thermoelectrons emitted from the filaments 18 collide gas and generate an extremely high concentration plasma as compared with conventional one. The process provides a mirror like hard quality nitride layer that needs no polishing, at low temperatures of 350-400 deg.C, during working time of 1/3 that of conventional method.
JP360979A 1979-01-16 1979-01-16 Ion nitride-production unit Pending JPS5597466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP360979A JPS5597466A (en) 1979-01-16 1979-01-16 Ion nitride-production unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP360979A JPS5597466A (en) 1979-01-16 1979-01-16 Ion nitride-production unit

Publications (1)

Publication Number Publication Date
JPS5597466A true JPS5597466A (en) 1980-07-24

Family

ID=11562225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP360979A Pending JPS5597466A (en) 1979-01-16 1979-01-16 Ion nitride-production unit

Country Status (1)

Country Link
JP (1) JPS5597466A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513660A1 (en) * 1981-09-30 1983-04-01 Kymin Oy Kymmene Ab PROCESS FOR NITRIDING LOW PRESSURE MATERIALS AND USING LUMINESCENT DISCHARGE
JPS6333553A (en) * 1986-07-24 1988-02-13 Masanobu Nunogaki Nitriding method with plasma source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2513660A1 (en) * 1981-09-30 1983-04-01 Kymin Oy Kymmene Ab PROCESS FOR NITRIDING LOW PRESSURE MATERIALS AND USING LUMINESCENT DISCHARGE
JPS6333553A (en) * 1986-07-24 1988-02-13 Masanobu Nunogaki Nitriding method with plasma source

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