JPS5591842A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5591842A JPS5591842A JP16497378A JP16497378A JPS5591842A JP S5591842 A JPS5591842 A JP S5591842A JP 16497378 A JP16497378 A JP 16497378A JP 16497378 A JP16497378 A JP 16497378A JP S5591842 A JPS5591842 A JP S5591842A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- alloy
- wiring
- alloy film
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To form an electrode and a wiring of fine pattern, without causing corrosion to an alloy, by patterning an Al-Cu alloy film on a semiconductor by using reactive spatter etching and exposing it to hydrogen plasma in the same device.
CONSTITUTION: A semiconductor wafer 5 containing an Al-Cu alloy film is placed on the top of an electrode 2 using a reaction chamber 1 provided with 2 parallel flat-plate-like electrodes 2 and 3, etc. By supplying the reacting chamber with an etchant gas of BCl3, CCl4, PCl3 and BBr3, etc. through a gas supplying pipe 1a and applying high frequency from a high frequency power source 4, reactive spatter etching is conducted and the Al-Cu alloy film is patterned to provide an electrode and a wiring. And then, hydrogen gas is introduced into the chamber to allow hydrogen lasma to be generated. By being exposed to the hydrogen plasma after being etched, the Al-Cu alloy can be protected from corrosion when it is taken out from the reaction chamber, and therefore, wiring breakage can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16497378A JPS5841766B2 (en) | 1978-12-28 | 1978-12-28 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16497378A JPS5841766B2 (en) | 1978-12-28 | 1978-12-28 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591842A true JPS5591842A (en) | 1980-07-11 |
JPS5841766B2 JPS5841766B2 (en) | 1983-09-14 |
Family
ID=15803394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16497378A Expired JPS5841766B2 (en) | 1978-12-28 | 1978-12-28 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5841766B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654043A (en) * | 1979-10-09 | 1981-05-13 | Matsushita Electronics Corp | Plasma etching method |
JPS5830133A (en) * | 1981-08-18 | 1983-02-22 | Matsushita Electric Ind Co Ltd | Plasma etching treatment |
JPS61128528A (en) * | 1984-11-27 | 1986-06-16 | Matsushita Electric Ind Co Ltd | Dry etching method of aluminum-silicon-copper alloy |
US5380397A (en) * | 1989-08-28 | 1995-01-10 | Hitachi, Ltd. | Method of treating samples |
-
1978
- 1978-12-28 JP JP16497378A patent/JPS5841766B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654043A (en) * | 1979-10-09 | 1981-05-13 | Matsushita Electronics Corp | Plasma etching method |
JPH0127571B2 (en) * | 1979-10-09 | 1989-05-30 | Matsushita Electronics Corp | |
JPS5830133A (en) * | 1981-08-18 | 1983-02-22 | Matsushita Electric Ind Co Ltd | Plasma etching treatment |
JPS61128528A (en) * | 1984-11-27 | 1986-06-16 | Matsushita Electric Ind Co Ltd | Dry etching method of aluminum-silicon-copper alloy |
US5380397A (en) * | 1989-08-28 | 1995-01-10 | Hitachi, Ltd. | Method of treating samples |
US5556714A (en) * | 1989-08-28 | 1996-09-17 | Hitachi, Ltd. | Method of treating samples |
US6329298B1 (en) | 1989-08-28 | 2001-12-11 | Hitachi, Ltd. | Apparatus for treating samples |
Also Published As
Publication number | Publication date |
---|---|
JPS5841766B2 (en) | 1983-09-14 |
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