JPS5623276A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS5623276A JPS5623276A JP9820179A JP9820179A JPS5623276A JP S5623276 A JPS5623276 A JP S5623276A JP 9820179 A JP9820179 A JP 9820179A JP 9820179 A JP9820179 A JP 9820179A JP S5623276 A JPS5623276 A JP S5623276A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- essentially
- ccl
- etchant
- carbon tetrachloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make possible good etching by etching a film comprising essentially aluminum by an etchant comprising essentially carbon tetrachloride and boron trichloride.
CONSTITUTION: In the case of forming the electrodes and wirings of semiconductor devices with aluminum, dry etching is performed by using the mixed vapor of carbon tetrachloride and boron trichloride as an etchant, whereby the following effects are obtained. An etching rate is high and the Al residues comprising essentially AlOx and undercuts are less. The permissible range of concn. of CCl4 vapor is large and stable. Working of Al-Cu is easy and etching is easy even with a plasma etching device. The etching rate is hardly affected by the pressure of reactive gas and CCl4 content and uniform etching is maintained. The selectivity for negative type photoresists and silicon is good, so the invention is practically usable.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9820179A JPS5623276A (en) | 1979-07-31 | 1979-07-31 | Dry etching method |
DE8080302564T DE3071299D1 (en) | 1979-07-31 | 1980-07-28 | Dry etching of metal film |
EP80302564A EP0023429B1 (en) | 1979-07-31 | 1980-07-28 | Dry etching of metal film |
CA000357204A CA1136525A (en) | 1979-07-31 | 1980-07-29 | Dry etching of metal film |
IE1592/80A IE50996B1 (en) | 1979-07-31 | 1980-07-30 | Dry etching of metal film |
US06/174,140 US4350563A (en) | 1979-07-31 | 1980-07-31 | Dry etching of metal film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9820179A JPS5623276A (en) | 1979-07-31 | 1979-07-31 | Dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5623276A true JPS5623276A (en) | 1981-03-05 |
JPS572787B2 JPS572787B2 (en) | 1982-01-18 |
Family
ID=14213381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9820179A Granted JPS5623276A (en) | 1979-07-31 | 1979-07-31 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5623276A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891171A (en) * | 1981-11-27 | 1983-05-31 | Kokusai Electric Co Ltd | Plasma etching method of aluminum and aluminum alloy |
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
CN112103167A (en) * | 2020-09-28 | 2020-12-18 | 上海华虹宏力半导体制造有限公司 | Dry etching process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
-
1979
- 1979-07-31 JP JP9820179A patent/JPS5623276A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891171A (en) * | 1981-11-27 | 1983-05-31 | Kokusai Electric Co Ltd | Plasma etching method of aluminum and aluminum alloy |
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
CN112103167A (en) * | 2020-09-28 | 2020-12-18 | 上海华虹宏力半导体制造有限公司 | Dry etching process |
Also Published As
Publication number | Publication date |
---|---|
JPS572787B2 (en) | 1982-01-18 |
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