JPS5570023A - Formation of electrode and wiring for semiconductor - Google Patents
Formation of electrode and wiring for semiconductorInfo
- Publication number
- JPS5570023A JPS5570023A JP14446378A JP14446378A JPS5570023A JP S5570023 A JPS5570023 A JP S5570023A JP 14446378 A JP14446378 A JP 14446378A JP 14446378 A JP14446378 A JP 14446378A JP S5570023 A JPS5570023 A JP S5570023A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- wiring
- formation
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent generation of Al spike by forming multicrystal silicon layer at the opening for formation of electrode of silicon oxide film, causing the formed metal layer to react against the multicrystal silicon and using the obtained silicide layer for electrode and wiring.
CONSTITUTION: Silicon oxide film 3 is provided with the opening 5 for taking out electrode. After formation of multicrystal silicon layer 11 on the entire surface, the opening is trimmed into the specified shape. Then, the entire surface is provided with metal layer 12 such as Pt, Pd, Mo, W, Ni, Ti, Cr and the like, which reacts through silicon and heat treatment. After converting the area containing multicrystal silicon into the silicide layer 13 by means of heat treatment, the metal layer 12 alone is removed through etching and the silicide side 13 as it is used for electrode and wiring. In accordance with the above process, wiring may be based on the formation of the Al layer 14 with the silicide layer 13 formed only as electrode.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14446378A JPS5570023A (en) | 1978-11-20 | 1978-11-20 | Formation of electrode and wiring for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14446378A JPS5570023A (en) | 1978-11-20 | 1978-11-20 | Formation of electrode and wiring for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5570023A true JPS5570023A (en) | 1980-05-27 |
Family
ID=15362847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14446378A Pending JPS5570023A (en) | 1978-11-20 | 1978-11-20 | Formation of electrode and wiring for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5570023A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56167331A (en) * | 1980-05-28 | 1981-12-23 | Sony Corp | Manufacture of semiconductor device |
JPS58138053A (en) * | 1982-02-12 | 1983-08-16 | Nec Corp | Semiconductor device and manufacture thereof |
JPS5910270A (en) * | 1982-07-09 | 1984-01-19 | Nec Corp | Semiconductor integrated circuit device |
JPS5916383A (en) * | 1982-07-19 | 1984-01-27 | Sony Corp | Semiconductor device |
-
1978
- 1978-11-20 JP JP14446378A patent/JPS5570023A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56167331A (en) * | 1980-05-28 | 1981-12-23 | Sony Corp | Manufacture of semiconductor device |
JPH0249011B2 (en) * | 1980-05-28 | 1990-10-26 | Sony Corp | |
JPS58138053A (en) * | 1982-02-12 | 1983-08-16 | Nec Corp | Semiconductor device and manufacture thereof |
JPS5910270A (en) * | 1982-07-09 | 1984-01-19 | Nec Corp | Semiconductor integrated circuit device |
JPH0376023B2 (en) * | 1982-07-09 | 1991-12-04 | Nippon Electric Co | |
JPS5916383A (en) * | 1982-07-19 | 1984-01-27 | Sony Corp | Semiconductor device |
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