JPS53148394A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53148394A
JPS53148394A JP6355277A JP6355277A JPS53148394A JP S53148394 A JPS53148394 A JP S53148394A JP 6355277 A JP6355277 A JP 6355277A JP 6355277 A JP6355277 A JP 6355277A JP S53148394 A JPS53148394 A JP S53148394A
Authority
JP
Japan
Prior art keywords
layer
manufacture
semiconductor device
high concentration
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6355277A
Other languages
Japanese (ja)
Inventor
Hitoshi Takahashi
Akira Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6355277A priority Critical patent/JPS53148394A/en
Publication of JPS53148394A publication Critical patent/JPS53148394A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To manufacture single crystal region with good quality, by laminating epitaxial layer on high concentration impurity layer on a substrate, providing grooves reaching the layer from the surface, and making the high concentration layer into high resistance and oxidizing the side surface of the grooves through the anodic oxidation and heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP6355277A 1977-05-31 1977-05-31 Manufacture of semiconductor device Pending JPS53148394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6355277A JPS53148394A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6355277A JPS53148394A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53148394A true JPS53148394A (en) 1978-12-23

Family

ID=13232494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6355277A Pending JPS53148394A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53148394A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5494846A (en) * 1993-12-17 1996-02-27 Nec Corporation Method of manufacturing semiconductor device
US5750432A (en) * 1995-06-07 1998-05-12 Harris Corporation Defect control in formation of dielectrically isolated semiconductor device regions
US5929508A (en) * 1998-05-21 1999-07-27 Harris Corp Defect gettering by induced stress
WO2006006392A1 (en) * 2004-07-07 2006-01-19 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device, manufacturing method thereof and camera using the solid-state image pickup device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US5494846A (en) * 1993-12-17 1996-02-27 Nec Corporation Method of manufacturing semiconductor device
US5750432A (en) * 1995-06-07 1998-05-12 Harris Corporation Defect control in formation of dielectrically isolated semiconductor device regions
US5929508A (en) * 1998-05-21 1999-07-27 Harris Corp Defect gettering by induced stress
WO2006006392A1 (en) * 2004-07-07 2006-01-19 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device, manufacturing method thereof and camera using the solid-state image pickup device
CN100459141C (en) * 2004-07-07 2009-02-04 松下电器产业株式会社 Solid-state image pickup device, manufacturing method thereof and camera using the solid-state image pickup device
US7696592B2 (en) 2004-07-07 2010-04-13 Panasonic Corporation Solid state imaging apparatus method for fabricating the same and camera using the same
JP4719149B2 (en) * 2004-07-07 2011-07-06 パナソニック株式会社 Solid-state imaging device and camera using the same

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