JPS5565150A - Ion sensor - Google Patents

Ion sensor

Info

Publication number
JPS5565150A
JPS5565150A JP13781378A JP13781378A JPS5565150A JP S5565150 A JPS5565150 A JP S5565150A JP 13781378 A JP13781378 A JP 13781378A JP 13781378 A JP13781378 A JP 13781378A JP S5565150 A JPS5565150 A JP S5565150A
Authority
JP
Japan
Prior art keywords
semiconductor
insulation film
good conductor
oxide
covalent bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13781378A
Other languages
Japanese (ja)
Inventor
Tetsuo Cho
Masamichi Fujihira
Motoo Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP13781378A priority Critical patent/JPS5565150A/en
Publication of JPS5565150A publication Critical patent/JPS5565150A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To avoid the change in the characteristics such as reproducibility and selectivity, by fixing the ion selection coordinator in covalent bond on the surface of the oxide insulation film coated on the surface of good conductor or semiconductor.
CONSTITUTION: The potential difference between the electrode of good conductor in oxide coating, platinum, tint, titanium, glassy carbon, semiconductor in oxide coating, or preferably silicon and the reference electrode is measured with the voltmeter having greater impedance to detect ions. Oxide insulation film is coated on the good conductor or semiconductor surface and on the surface of insulation film, the ion selective coordinator is directly fixed in covalent bond.
COPYRIGHT: (C)1980,JPO&Japio
JP13781378A 1978-11-10 1978-11-10 Ion sensor Pending JPS5565150A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13781378A JPS5565150A (en) 1978-11-10 1978-11-10 Ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13781378A JPS5565150A (en) 1978-11-10 1978-11-10 Ion sensor

Publications (1)

Publication Number Publication Date
JPS5565150A true JPS5565150A (en) 1980-05-16

Family

ID=15207448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13781378A Pending JPS5565150A (en) 1978-11-10 1978-11-10 Ion sensor

Country Status (1)

Country Link
JP (1) JPS5565150A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092899B2 (en) * 2003-12-05 2012-01-10 Sony Deutschland Gmbh Method of activating a silicon surface for subsequent patterning of molecules onto said surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092899B2 (en) * 2003-12-05 2012-01-10 Sony Deutschland Gmbh Method of activating a silicon surface for subsequent patterning of molecules onto said surface

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