JPS5562738A - Preparation of semiconductor element - Google Patents
Preparation of semiconductor elementInfo
- Publication number
- JPS5562738A JPS5562738A JP13544978A JP13544978A JPS5562738A JP S5562738 A JPS5562738 A JP S5562738A JP 13544978 A JP13544978 A JP 13544978A JP 13544978 A JP13544978 A JP 13544978A JP S5562738 A JPS5562738 A JP S5562738A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- coating
- drying state
- film
- half drying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To prevent a flow down at groove corner and to obtain a uniform thickness when a thick resist is required by a special process by coating the surface of semiconductor wafer with resist by means of spraying method and by treating the element in half drying state after the said process.
CONSTITUTION: When the surface of semiconductor wafer is coated with photoresist by means of spraying method, the resist is kept in half drying state. The viscosity of resist is made about 7cp so that it is not stringy in spray-coating, pressure of the spray nozzle is made about 4.0kg/cm2, and the spraying is performed at a distance 20cm. The film thickness is controlled by the number of times of coating. In this way, the film thickness can be made uniform by using resist in half drying state although the wafer face is flat or V-grooved. Also the film can be made flat even for thick film, a pin hole will not be produced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13544978A JPS5562738A (en) | 1978-11-02 | 1978-11-02 | Preparation of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13544978A JPS5562738A (en) | 1978-11-02 | 1978-11-02 | Preparation of semiconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5562738A true JPS5562738A (en) | 1980-05-12 |
JPS6360526B2 JPS6360526B2 (en) | 1988-11-24 |
Family
ID=15151964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13544978A Granted JPS5562738A (en) | 1978-11-02 | 1978-11-02 | Preparation of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562738A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145325A (en) * | 1981-03-04 | 1982-09-08 | Nec Corp | Manufacture of semiconductor device |
JPS63244032A (en) * | 1987-03-31 | 1988-10-11 | Tanaka Kikinzoku Kogyo Kk | Formation of resist film on rugged substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495271A (en) * | 1972-05-01 | 1974-01-17 | ||
JPS5128466A (en) * | 1974-09-03 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Kyoshijoha bunshukairo |
-
1978
- 1978-11-02 JP JP13544978A patent/JPS5562738A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495271A (en) * | 1972-05-01 | 1974-01-17 | ||
JPS5128466A (en) * | 1974-09-03 | 1976-03-10 | Matsushita Electric Ind Co Ltd | Kyoshijoha bunshukairo |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145325A (en) * | 1981-03-04 | 1982-09-08 | Nec Corp | Manufacture of semiconductor device |
JPS63244032A (en) * | 1987-03-31 | 1988-10-11 | Tanaka Kikinzoku Kogyo Kk | Formation of resist film on rugged substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS6360526B2 (en) | 1988-11-24 |
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