JPS5562738A - Preparation of semiconductor element - Google Patents

Preparation of semiconductor element

Info

Publication number
JPS5562738A
JPS5562738A JP13544978A JP13544978A JPS5562738A JP S5562738 A JPS5562738 A JP S5562738A JP 13544978 A JP13544978 A JP 13544978A JP 13544978 A JP13544978 A JP 13544978A JP S5562738 A JPS5562738 A JP S5562738A
Authority
JP
Japan
Prior art keywords
resist
coating
drying state
film
half drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13544978A
Other languages
Japanese (ja)
Other versions
JPS6360526B2 (en
Inventor
Josuke Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13544978A priority Critical patent/JPS5562738A/en
Publication of JPS5562738A publication Critical patent/JPS5562738A/en
Publication of JPS6360526B2 publication Critical patent/JPS6360526B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To prevent a flow down at groove corner and to obtain a uniform thickness when a thick resist is required by a special process by coating the surface of semiconductor wafer with resist by means of spraying method and by treating the element in half drying state after the said process.
CONSTITUTION: When the surface of semiconductor wafer is coated with photoresist by means of spraying method, the resist is kept in half drying state. The viscosity of resist is made about 7cp so that it is not stringy in spray-coating, pressure of the spray nozzle is made about 4.0kg/cm2, and the spraying is performed at a distance 20cm. The film thickness is controlled by the number of times of coating. In this way, the film thickness can be made uniform by using resist in half drying state although the wafer face is flat or V-grooved. Also the film can be made flat even for thick film, a pin hole will not be produced.
COPYRIGHT: (C)1980,JPO&Japio
JP13544978A 1978-11-02 1978-11-02 Preparation of semiconductor element Granted JPS5562738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13544978A JPS5562738A (en) 1978-11-02 1978-11-02 Preparation of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13544978A JPS5562738A (en) 1978-11-02 1978-11-02 Preparation of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5562738A true JPS5562738A (en) 1980-05-12
JPS6360526B2 JPS6360526B2 (en) 1988-11-24

Family

ID=15151964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13544978A Granted JPS5562738A (en) 1978-11-02 1978-11-02 Preparation of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5562738A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145325A (en) * 1981-03-04 1982-09-08 Nec Corp Manufacture of semiconductor device
JPS63244032A (en) * 1987-03-31 1988-10-11 Tanaka Kikinzoku Kogyo Kk Formation of resist film on rugged substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495271A (en) * 1972-05-01 1974-01-17
JPS5128466A (en) * 1974-09-03 1976-03-10 Matsushita Electric Ind Co Ltd Kyoshijoha bunshukairo

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495271A (en) * 1972-05-01 1974-01-17
JPS5128466A (en) * 1974-09-03 1976-03-10 Matsushita Electric Ind Co Ltd Kyoshijoha bunshukairo

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145325A (en) * 1981-03-04 1982-09-08 Nec Corp Manufacture of semiconductor device
JPS63244032A (en) * 1987-03-31 1988-10-11 Tanaka Kikinzoku Kogyo Kk Formation of resist film on rugged substrate

Also Published As

Publication number Publication date
JPS6360526B2 (en) 1988-11-24

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