JPS5559741A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5559741A JPS5559741A JP13163878A JP13163878A JPS5559741A JP S5559741 A JPS5559741 A JP S5559741A JP 13163878 A JP13163878 A JP 13163878A JP 13163878 A JP13163878 A JP 13163878A JP S5559741 A JPS5559741 A JP S5559741A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- lower electrode
- film
- upper electrode
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain excellent continuity by a minute through hole, by forming the through hole to a layer insulation film in an organic material mounted onto a lower electrode, by etching the hole by means of sputtering and by installing an upper electrode by making up a metallic film in vacuum.
CONSTITUTION: In a monolithic IC or a hybrid IC, an organic film 1 with high heat-proof in polyimide resin, etc. is built up on a lower electrode 4 as a layer insulation film. A through hole is formed at a necessary location of the organic film in order to aim at electric continuity with an upper electrode, and an insulating film 3 produced on a surface of the lower electrode of a through hole portion is removed by means of etching by sputtering treatment in Ar. An upper electrode is continuously made up by means of evaporation, etc. without exposing the surface of the lower electrode of the through hole portion purified to atmospheric air. Thus, the through hole can be fined without increasing the resistance of the through hole.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13163878A JPS5559741A (en) | 1978-10-27 | 1978-10-27 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13163878A JPS5559741A (en) | 1978-10-27 | 1978-10-27 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5559741A true JPS5559741A (en) | 1980-05-06 |
Family
ID=15062727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13163878A Pending JPS5559741A (en) | 1978-10-27 | 1978-10-27 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559741A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893354A (en) * | 1981-11-30 | 1983-06-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61170050A (en) * | 1985-01-17 | 1986-07-31 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Formation of low resistance contact |
JPS61214538A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Wiring structure and its manufacture |
JPH01201938A (en) * | 1988-02-05 | 1989-08-14 | Fujitsu Ltd | Formation of multilayer electrode wiring layer in semiconductor device |
JPH0327526A (en) * | 1989-06-23 | 1991-02-05 | Nec Corp | Manufacture of semiconductor integrated circuit device |
JP2011187969A (en) * | 2005-02-25 | 2011-09-22 | Casio Computer Co Ltd | Method of manufacturing semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53107285A (en) * | 1977-03-02 | 1978-09-19 | Hitachi Ltd | Production of wiring structural body |
-
1978
- 1978-10-27 JP JP13163878A patent/JPS5559741A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53107285A (en) * | 1977-03-02 | 1978-09-19 | Hitachi Ltd | Production of wiring structural body |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893354A (en) * | 1981-11-30 | 1983-06-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH033382B2 (en) * | 1981-11-30 | 1991-01-18 | Mitsubishi Electric Corp | |
JPS61170050A (en) * | 1985-01-17 | 1986-07-31 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Formation of low resistance contact |
JPS61214538A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Wiring structure and its manufacture |
JPH01201938A (en) * | 1988-02-05 | 1989-08-14 | Fujitsu Ltd | Formation of multilayer electrode wiring layer in semiconductor device |
JPH0327526A (en) * | 1989-06-23 | 1991-02-05 | Nec Corp | Manufacture of semiconductor integrated circuit device |
JP2011187969A (en) * | 2005-02-25 | 2011-09-22 | Casio Computer Co Ltd | Method of manufacturing semiconductor device |
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