JPS5491087A - Manufacture of thin-film solar cell - Google Patents

Manufacture of thin-film solar cell

Info

Publication number
JPS5491087A
JPS5491087A JP15836177A JP15836177A JPS5491087A JP S5491087 A JPS5491087 A JP S5491087A JP 15836177 A JP15836177 A JP 15836177A JP 15836177 A JP15836177 A JP 15836177A JP S5491087 A JPS5491087 A JP S5491087A
Authority
JP
Japan
Prior art keywords
substrate
film
etching mask
thin
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15836177A
Other languages
Japanese (ja)
Inventor
Shohei Koshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP15836177A priority Critical patent/JPS5491087A/en
Publication of JPS5491087A publication Critical patent/JPS5491087A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

PURPOSE: To obtain a thin-film substrate which never causes a short circuit with its shape constant at the time of breaking a thin film away, by using a transparent insulating film, serving for a reflection preventive film, for an etching mask.
CONSTITUTION: On GaAl substrate 1, GaAlAs layer 2, GaAs layer 3 and GaAlAs layer 4 are epitaxy-grown in sequence. Next, upper electrode 5 which becomes ohmic is formed on it. Next, etching mask 8 of a transparent oxide such as SiO is masking-formed through vapor deposition, etc. Then, layers 4 and 3 are etched selectively in sequence. Etching mask 8' of the same transparent insulating film is also masking-formed. Layer 2 is etched and thin-film substrate 7' is peeled from substrate 1. Since etching mask 8 will not be etched by an etching solution, substrate 7' obtained in this way is constant in shape and the flank of the substrate insulated, so that no short will be caused at the flank. In addition, etching mask 8 serves for a reflection preventive film, so that the need for forming the reflection preventive film will be eliminated.
COPYRIGHT: (C)1979,JPO&Japio
JP15836177A 1977-12-28 1977-12-28 Manufacture of thin-film solar cell Pending JPS5491087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15836177A JPS5491087A (en) 1977-12-28 1977-12-28 Manufacture of thin-film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15836177A JPS5491087A (en) 1977-12-28 1977-12-28 Manufacture of thin-film solar cell

Publications (1)

Publication Number Publication Date
JPS5491087A true JPS5491087A (en) 1979-07-19

Family

ID=15669987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15836177A Pending JPS5491087A (en) 1977-12-28 1977-12-28 Manufacture of thin-film solar cell

Country Status (1)

Country Link
JP (1) JPS5491087A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142685A (en) * 1980-04-09 1981-11-07 Ricoh Co Ltd Manufacture of photoelectric converter
JPS62502089A (en) * 1985-09-09 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− Thin semiconductor structure
JPH042173A (en) * 1990-04-19 1992-01-07 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPH0491482A (en) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp Manufacture of solar cell
JPH04312982A (en) * 1991-01-28 1992-11-04 Kobe Steel Ltd Semiconductor polycrystalline diamond electronic device and manufacture thereof
JPH05343712A (en) * 1992-06-05 1993-12-24 Hitachi Ltd Manufacture of tandem heterogeneous photoelectric conversion element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142685A (en) * 1980-04-09 1981-11-07 Ricoh Co Ltd Manufacture of photoelectric converter
JPS62502089A (en) * 1985-09-09 1987-08-13 ヒュ−ズ・エアクラフト・カンパニ− Thin semiconductor structure
JPH042173A (en) * 1990-04-19 1992-01-07 Sanyo Electric Co Ltd Manufacture of photovoltaic device
JPH0491482A (en) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp Manufacture of solar cell
JPH04312982A (en) * 1991-01-28 1992-11-04 Kobe Steel Ltd Semiconductor polycrystalline diamond electronic device and manufacture thereof
JPH05343712A (en) * 1992-06-05 1993-12-24 Hitachi Ltd Manufacture of tandem heterogeneous photoelectric conversion element

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