JPS5613771A - Metal-oxide semiconductor device - Google Patents
Metal-oxide semiconductor deviceInfo
- Publication number
- JPS5613771A JPS5613771A JP8929279A JP8929279A JPS5613771A JP S5613771 A JPS5613771 A JP S5613771A JP 8929279 A JP8929279 A JP 8929279A JP 8929279 A JP8929279 A JP 8929279A JP S5613771 A JPS5613771 A JP S5613771A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- windows
- regions
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 3
- 238000002844 melting Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To restrain the production of parasitic MOS due to Al evaporated wiring by burying a field shielding layer of a metal having a high melting point in the oxide film provided on a semiconductor substrate, the field shielding layer being connected to the substrate through a high impurity atom concentration layer. CONSTITUTION:A SiO2 film 13a is formed on a Si substrate 10, and provided with windows 20 for permitting a metal having a high melting point to contact to the substrate 10. On the portions of the substrate 10 exposed in the windows 20, high- concentration regions 15 of the same conductive type as the substrate 10 are formed by ion implantation or the like. Then the film 13a is removed by using hydrofluoric acid, and a SiO2 film 13b is newly grown, which is provided with windows corresponding to the regions 15. The whole surface is coated with a metal layer 14 of W, Ta, Mo or the like having a high melting point so that the layer 14 contacts the regions 15. After that, windows 21 are opened in the laminate of the layer 14 and the film 13b. On the portions of the substrate 10 exposed in the windows 21, reverse conducting source and drain regions 11 and 12 for an MOSFET are formed by diffusion. Then the whole surface is covered with a SiO2 film 13, in which contact holes are made to provide Al electrodes 16-18 in the source, drain and gate regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929279A JPS5613771A (en) | 1979-07-16 | 1979-07-16 | Metal-oxide semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929279A JPS5613771A (en) | 1979-07-16 | 1979-07-16 | Metal-oxide semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5613771A true JPS5613771A (en) | 1981-02-10 |
Family
ID=13966605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8929279A Pending JPS5613771A (en) | 1979-07-16 | 1979-07-16 | Metal-oxide semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5613771A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0479504A2 (en) * | 1990-10-03 | 1992-04-08 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5164881A (en) * | 1974-12-03 | 1976-06-04 | Nippon Electric Co | DENKAIKOKAHANDOTAISOCHI |
| JPS5310970A (en) * | 1976-07-19 | 1978-01-31 | Hitachi Ltd | Production of semiconductor device |
-
1979
- 1979-07-16 JP JP8929279A patent/JPS5613771A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5164881A (en) * | 1974-12-03 | 1976-06-04 | Nippon Electric Co | DENKAIKOKAHANDOTAISOCHI |
| JPS5310970A (en) * | 1976-07-19 | 1978-01-31 | Hitachi Ltd | Production of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0479504A2 (en) * | 1990-10-03 | 1992-04-08 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor |
| US5355012A (en) * | 1990-10-03 | 1994-10-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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