JPS5554573A - Etching method for substrate - Google Patents

Etching method for substrate

Info

Publication number
JPS5554573A
JPS5554573A JP12681178A JP12681178A JPS5554573A JP S5554573 A JPS5554573 A JP S5554573A JP 12681178 A JP12681178 A JP 12681178A JP 12681178 A JP12681178 A JP 12681178A JP S5554573 A JPS5554573 A JP S5554573A
Authority
JP
Japan
Prior art keywords
etching
vessel
solution
substrate
accomodated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12681178A
Other languages
Japanese (ja)
Other versions
JPS5942747B2 (en
Inventor
Tsuguo Fukuda
Hiroshi Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53126811A priority Critical patent/JPS5942747B2/en
Publication of JPS5554573A publication Critical patent/JPS5554573A/en
Publication of JPS5942747B2 publication Critical patent/JPS5942747B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To sharply improve the etching velocity compared with usual method, by providing non-etching substrate in closely sealed vessel accomodated aqueous etching solution containng F ion and etching the substate at the temperature more than boiling point.
CONSTITUTION: Water soluble etching solution (containing HF; 10W25mol. and HNO3; 1W7mol or H2SO4; 1W10mol. in the solution ane also, HBr, H3PO4 etc. is able to use), such as HNO3, H2SO4 etc. containing HF, is accomodated in the etching vessel composed of the cover 1, Teflon vessel 2, the vessel 4 made of SAS and the outer cover 3 etc. and etching is carried out under pressure heating suitably at the temperature more than 150°C and less than 250°C after dipping the substrate to be etched, such as LiTaO3 etc., in the above solution and sealing the vessel closely. By the above method, etching speed and effect are made more than ten times compared with usual method and control is made easy and also, superior reproducibility is able to obtain.
COPYRIGHT: (C)1980,JPO&Japio
JP53126811A 1978-10-17 1978-10-17 Substrate etching method Expired JPS5942747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53126811A JPS5942747B2 (en) 1978-10-17 1978-10-17 Substrate etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53126811A JPS5942747B2 (en) 1978-10-17 1978-10-17 Substrate etching method

Publications (2)

Publication Number Publication Date
JPS5554573A true JPS5554573A (en) 1980-04-21
JPS5942747B2 JPS5942747B2 (en) 1984-10-17

Family

ID=14944535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53126811A Expired JPS5942747B2 (en) 1978-10-17 1978-10-17 Substrate etching method

Country Status (1)

Country Link
JP (1) JPS5942747B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461978B1 (en) 1998-10-23 2002-10-08 Lg. Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
CN105839109A (en) * 2016-05-04 2016-08-10 合肥江航飞机装备有限公司 Bath solution formula for precise alloy 3J1 chemical polishing

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461978B1 (en) 1998-10-23 2002-10-08 Lg. Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
US7101809B2 (en) 1998-10-23 2006-09-05 Lg.Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
US7202165B2 (en) 1998-10-23 2007-04-10 Lg.Philips Lcd Co., Ltd Electronic device having a stacked wiring layer including Al and Ti
DE19951055B4 (en) * 1998-10-23 2017-08-24 Lg Display Co., Ltd. A method of manufacturing a substrate for electronic devices using an etchant
CN105839109A (en) * 2016-05-04 2016-08-10 合肥江航飞机装备有限公司 Bath solution formula for precise alloy 3J1 chemical polishing

Also Published As

Publication number Publication date
JPS5942747B2 (en) 1984-10-17

Similar Documents

Publication Publication Date Title
JPS5297394A (en) Removal of organic matter in phosphoric acid
JPS5554573A (en) Etching method for substrate
JPS529963A (en) Method for removing arsenic and silicic acid contained in aqueous solu tion simultaneously
JPS51116060A (en) Method of fixing fluorine in borofluoride-containing waste liquid
JPS5719381A (en) Formation of heating surface on aluminum material
JPS5357185A (en) Improved preserving method for selectively permeable membrane
JPS5595339A (en) Preparation of semiconductor device
JPS5591187A (en) Method of forming electrode for semiconductor device
JPS5343481A (en) Mirror surface etching method of sapphire substrate crystal
JPS531178A (en) Separation spcecificity recovering method of membrane
JPS55143037A (en) Treating method of semiconductor complex
JPS5456763A (en) Resistivity measuring method for semiconductor silicon single-crystal
JPS52122479A (en) Etching solution of silicon
JPS522069A (en) Method of manufacturing wiper
JPS5515976A (en) Corrosiveness controlling method for fluorine-containing solution
JPS52132854A (en) Electrochromic indicating cell and preparation thereof
JPS55161068A (en) Etching method of semiconductor substrate
JPS5382174A (en) Surface processing method for semiconductor device
JPS5233561A (en) Volume measuring method of large tank
JPS5368412A (en) Vaccume exhausting method
JPS5297395A (en) Removal of organic matter in phosphoric acid
JPS53135846A (en) Etching method
JPS5242807A (en) Process for preparation of alkyleneglycol
Krivelevich et al. The nature of equatorial westerlies in the Indian Ocean
JPS5339399A (en) Preparation of silicon polyme or oligomer