JPS5550652A - Composite element adjusting method by ion beam - Google Patents

Composite element adjusting method by ion beam

Info

Publication number
JPS5550652A
JPS5550652A JP11411378A JP11411378A JPS5550652A JP S5550652 A JPS5550652 A JP S5550652A JP 11411378 A JP11411378 A JP 11411378A JP 11411378 A JP11411378 A JP 11411378A JP S5550652 A JPS5550652 A JP S5550652A
Authority
JP
Japan
Prior art keywords
resistance value
ions
resistors
resistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11411378A
Other languages
Japanese (ja)
Other versions
JPS6358371B2 (en
Inventor
Keizo Shimizu
Kyuzo Kawakatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11411378A priority Critical patent/JPS5550652A/en
Publication of JPS5550652A publication Critical patent/JPS5550652A/en
Publication of JPS6358371B2 publication Critical patent/JPS6358371B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To improve the characteristics of composite elements, by adjusting the electric characteristics of a large number of minute elements mounted on a substrate by selectively irradiating ion beams finely focussed to the minute elements.
CONSTITUTION: When the resistance value of resistors 2∼4 formed on a substrate 1 is not identical and only the resistance value of the resistor 3 is larger than the resistance value of the other resistors 2, 4, the ions of substance, which is electrically active and increases conductivity, are selectively irradiated to one portion of the resistor 3 by using ion beams 5 focussed, the resistance value is decreased and the value is made even to other value. Conversely, when the resistance value of the resistor 3 is smaller than that of the other resistors 2, 4, the ions of inactive substance or the ions of substance with different conductivity are irradiated, the resistance value is enlarged and the resistance value is similarly made uniform. That is, when a resistance of a Ta film is installed on the substrate, an insulator of ceramics, the gas ions of Ne, Ar, etc. are used in order to again increase the ions of Au, Al, etc. because of the diminution of resistance value.
COPYRIGHT: (C)1980,JPO&Japio
JP11411378A 1978-09-19 1978-09-19 Composite element adjusting method by ion beam Granted JPS5550652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11411378A JPS5550652A (en) 1978-09-19 1978-09-19 Composite element adjusting method by ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11411378A JPS5550652A (en) 1978-09-19 1978-09-19 Composite element adjusting method by ion beam

Publications (2)

Publication Number Publication Date
JPS5550652A true JPS5550652A (en) 1980-04-12
JPS6358371B2 JPS6358371B2 (en) 1988-11-15

Family

ID=14629447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11411378A Granted JPS5550652A (en) 1978-09-19 1978-09-19 Composite element adjusting method by ion beam

Country Status (1)

Country Link
JP (1) JPS5550652A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211757A (en) * 1984-04-05 1985-10-24 Hitachi Ltd Ion microbeam processing device
JPS63158852A (en) * 1986-12-22 1988-07-01 Mitsubishi Electric Corp Semiconductor device
JPH02119244A (en) * 1988-10-28 1990-05-07 Nec Corp Manufacture of semiconductor integrated circuit
JPH06244178A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Ic processing device
JPH06244177A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JPH08153721A (en) * 1995-04-26 1996-06-11 Hitachi Ltd Method and device for correcting ic element
EP0938097A2 (en) * 1998-02-19 1999-08-25 Nec Corporation Memory reading circuit and SRAM

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144880A (en) * 1974-10-16 1976-04-16 Suwa Seikosha Kk
JPS5496384A (en) * 1977-07-18 1979-07-30 Mostek Corp Method of and structure for crossing information signal for ic
JPS54113278A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Selective wiring in lsi

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144880A (en) * 1974-10-16 1976-04-16 Suwa Seikosha Kk
JPS5496384A (en) * 1977-07-18 1979-07-30 Mostek Corp Method of and structure for crossing information signal for ic
JPS54113278A (en) * 1978-02-24 1979-09-04 Hitachi Ltd Selective wiring in lsi

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211757A (en) * 1984-04-05 1985-10-24 Hitachi Ltd Ion microbeam processing device
JPS63158852A (en) * 1986-12-22 1988-07-01 Mitsubishi Electric Corp Semiconductor device
JPH02119244A (en) * 1988-10-28 1990-05-07 Nec Corp Manufacture of semiconductor integrated circuit
JPH06244178A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Ic processing device
JPH06244177A (en) * 1993-11-15 1994-09-02 Hitachi Ltd Method for modifying ic
JP2829232B2 (en) * 1993-11-15 1998-11-25 株式会社日立製作所 IC device processing equipment
JPH08153721A (en) * 1995-04-26 1996-06-11 Hitachi Ltd Method and device for correcting ic element
JP2829254B2 (en) * 1995-04-26 1998-11-25 株式会社日立製作所 IC element repair method and device
EP0938097A2 (en) * 1998-02-19 1999-08-25 Nec Corporation Memory reading circuit and SRAM
EP0938097A3 (en) * 1998-02-19 2000-08-23 Nec Corporation Memory reading circuit and SRAM

Also Published As

Publication number Publication date
JPS6358371B2 (en) 1988-11-15

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