JPS5550652A - Composite element adjusting method by ion beam - Google Patents
Composite element adjusting method by ion beamInfo
- Publication number
- JPS5550652A JPS5550652A JP11411378A JP11411378A JPS5550652A JP S5550652 A JPS5550652 A JP S5550652A JP 11411378 A JP11411378 A JP 11411378A JP 11411378 A JP11411378 A JP 11411378A JP S5550652 A JPS5550652 A JP S5550652A
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- ions
- resistors
- resistor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To improve the characteristics of composite elements, by adjusting the electric characteristics of a large number of minute elements mounted on a substrate by selectively irradiating ion beams finely focussed to the minute elements.
CONSTITUTION: When the resistance value of resistors 2∼4 formed on a substrate 1 is not identical and only the resistance value of the resistor 3 is larger than the resistance value of the other resistors 2, 4, the ions of substance, which is electrically active and increases conductivity, are selectively irradiated to one portion of the resistor 3 by using ion beams 5 focussed, the resistance value is decreased and the value is made even to other value. Conversely, when the resistance value of the resistor 3 is smaller than that of the other resistors 2, 4, the ions of inactive substance or the ions of substance with different conductivity are irradiated, the resistance value is enlarged and the resistance value is similarly made uniform. That is, when a resistance of a Ta film is installed on the substrate, an insulator of ceramics, the gas ions of Ne, Ar, etc. are used in order to again increase the ions of Au, Al, etc. because of the diminution of resistance value.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11411378A JPS5550652A (en) | 1978-09-19 | 1978-09-19 | Composite element adjusting method by ion beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11411378A JPS5550652A (en) | 1978-09-19 | 1978-09-19 | Composite element adjusting method by ion beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5550652A true JPS5550652A (en) | 1980-04-12 |
JPS6358371B2 JPS6358371B2 (en) | 1988-11-15 |
Family
ID=14629447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11411378A Granted JPS5550652A (en) | 1978-09-19 | 1978-09-19 | Composite element adjusting method by ion beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5550652A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60211757A (en) * | 1984-04-05 | 1985-10-24 | Hitachi Ltd | Ion microbeam processing device |
JPS63158852A (en) * | 1986-12-22 | 1988-07-01 | Mitsubishi Electric Corp | Semiconductor device |
JPH02119244A (en) * | 1988-10-28 | 1990-05-07 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPH06244178A (en) * | 1993-11-15 | 1994-09-02 | Hitachi Ltd | Ic processing device |
JPH06244177A (en) * | 1993-11-15 | 1994-09-02 | Hitachi Ltd | Method for modifying ic |
JPH08153721A (en) * | 1995-04-26 | 1996-06-11 | Hitachi Ltd | Method and device for correcting ic element |
EP0938097A2 (en) * | 1998-02-19 | 1999-08-25 | Nec Corporation | Memory reading circuit and SRAM |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144880A (en) * | 1974-10-16 | 1976-04-16 | Suwa Seikosha Kk | |
JPS5496384A (en) * | 1977-07-18 | 1979-07-30 | Mostek Corp | Method of and structure for crossing information signal for ic |
JPS54113278A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Selective wiring in lsi |
-
1978
- 1978-09-19 JP JP11411378A patent/JPS5550652A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144880A (en) * | 1974-10-16 | 1976-04-16 | Suwa Seikosha Kk | |
JPS5496384A (en) * | 1977-07-18 | 1979-07-30 | Mostek Corp | Method of and structure for crossing information signal for ic |
JPS54113278A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Selective wiring in lsi |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60211757A (en) * | 1984-04-05 | 1985-10-24 | Hitachi Ltd | Ion microbeam processing device |
JPS63158852A (en) * | 1986-12-22 | 1988-07-01 | Mitsubishi Electric Corp | Semiconductor device |
JPH02119244A (en) * | 1988-10-28 | 1990-05-07 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPH06244178A (en) * | 1993-11-15 | 1994-09-02 | Hitachi Ltd | Ic processing device |
JPH06244177A (en) * | 1993-11-15 | 1994-09-02 | Hitachi Ltd | Method for modifying ic |
JP2829232B2 (en) * | 1993-11-15 | 1998-11-25 | 株式会社日立製作所 | IC device processing equipment |
JPH08153721A (en) * | 1995-04-26 | 1996-06-11 | Hitachi Ltd | Method and device for correcting ic element |
JP2829254B2 (en) * | 1995-04-26 | 1998-11-25 | 株式会社日立製作所 | IC element repair method and device |
EP0938097A2 (en) * | 1998-02-19 | 1999-08-25 | Nec Corporation | Memory reading circuit and SRAM |
EP0938097A3 (en) * | 1998-02-19 | 2000-08-23 | Nec Corporation | Memory reading circuit and SRAM |
Also Published As
Publication number | Publication date |
---|---|
JPS6358371B2 (en) | 1988-11-15 |
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