JPS6395679A - Manufacture of gaas solar cell - Google Patents
Manufacture of gaas solar cellInfo
- Publication number
- JPS6395679A JPS6395679A JP61241656A JP24165686A JPS6395679A JP S6395679 A JPS6395679 A JP S6395679A JP 61241656 A JP61241656 A JP 61241656A JP 24165686 A JP24165686 A JP 24165686A JP S6395679 A JPS6395679 A JP S6395679A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- gaas
- onto
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 37
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000009751 slip forming Methods 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- 241000948258 Gila Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は通信衛星などの各種電源に使用されるＧａＡ
ｓ太陽電池の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is a GaA
This invention relates to a method for manufacturing a solar cell.
第２図は従来のＧ１Ａ３太陽電池を示す図であシ。 FIG. 2 is a diagram showing a conventional G1A3 solar cell.
同図（ａ）は平面図、同図（ｂ）は同図（ａ）のＡ−Ａ
’断面図である。この種のＧＩＬＡ！ｌ太陽電池は次の
ようにして製作される。すなわち、同図に示すように例
えばキャリア濃度１０１８個／ｃｍ３．基板ＷＪミ３０
０ μｍ程度の片面ミラー仕上した低比抵抗をもっＧａ
Ａｓ単結晶基板をｎ＋形ＧａＡｓ基板１として用い、こ
のＧａＡｓ基板１に、液相エピタキシャル成長材料であ
る金属Ｇａ 、ポリＧａＡｓおよび不純物源となる錫（
Ｓｎ）を炉体高温部で溶解してなるメルトを炉体内の還
元ガス雰囲気中で接触させ、炉体内温度を下降させるこ
とによシ、Ｇ ａ Ａ ３基板１の主表面に高比抵抗を
もつｎ−形Ｇ ａ Ａ Ｂ 層２が形成される。Figure (a) is a plan view, Figure (b) is A-A in Figure (a).
'This is a cross-sectional view. This kind of GILA! A solar cell is manufactured as follows. That is, as shown in the figure, for example, the carrier concentration is 1018 pieces/cm3. Board WJ Mi30
Ga with a low specific resistance with a single-sided mirror finish of about 0 μm.
An As single crystal substrate is used as the n+ type GaAs substrate 1, and this GaAs substrate 1 is coated with metal Ga, poly GaAs, which is a liquid phase epitaxial growth material, and tin (which is an impurity source).
By bringing the melt formed by melting Sn) in the high-temperature part of the furnace body into contact with it in a reducing gas atmosphere inside the furnace body and lowering the temperature inside the furnace body, a high resistivity is imparted to the main surface of the G a A 3 substrate 1. An n-type G a AB layer 2 is formed.
次に前述したと同様の液相エピタキシャル成長法で不純
物の異なるメルトをこのＧａＡｓ層２の主表面に接触さ
せる。この場合、炉体内でメルトに含まれる例えば亜鉛
（Ｚｎ）などの不純物によってＧａＡｓ［２への拡散が
行なわれ、ＧａＡｓ層２の主表面に低比抵抗をもつｐ形
波散層３がｐ形ＱａＡ８層として形成される。さらに炉
体同温度を下降させることによってこの拡散層３の主表
面に、ｐ形ＡｔｘＧａ １−ｘＡｓ中のＡｔ組成比Ｘが
０．８５〜０．９５程度のｐ形ＡｔＧａＡｇ成長層４を
該１００Ｘ程度析出・させる。次いでこのＡｌＧａＡｓ
成長層４の主表面に常圧ＣＶＤ法により窒化膜などの光
透過率の良好な反射防止膜５を数１００ Ｘ程度に形成
したうえ、この反射防止膜５上に図示しないレジストを
塗布し、このレジスト膜を写真製版技術でパターニング
して選択的に開孔部を形成し、この開孔部に相当する反
射防止膜をプラズマエツチング法により除去し、さらに
弗酸系のエツチング液で下部のＡｌＧａＡｓ成長層を除
去する。引き続き、この露出したコンタクトホール部分
の拡散層３０表面にスパッタ法または蒸着法によシＴ
ｉ ／Ａ ｇなどからなる金属膜を形成した後、この金
属膜を写真製版技術および化学エッチ法で選択的にパタ
ーニングすることによって第１の金属電極６．７を形成
する。次いでＧａＡｓ基板１の拡散層３側を耐薬性の大
きい保護膜でコートした後、このＧａＡｓ基板１の裏面
を硝酸系のエッチ液で数十μｍ程度エツチングした後、
その裏面の全面にスパッタ法または蒸着法によりＡｕ／
Ｎｉ／Ａｕ／Ａｇなどからなるｎ形の第２の金属電極８
を形成し、当該基板を炉内で約４００℃程度に加熱し、
シンタリングを行ない、電気的なオーミック性を良好に
させてＧａＡｓ太陽電池を製作する。Next, melts containing different impurities are brought into contact with the main surface of the GaAs layer 2 using the same liquid phase epitaxial growth method as described above. In this case, impurities such as zinc (Zn) contained in the melt in the furnace diffuse into GaAs[2, and the p-type scattering layer 3 with low resistivity on the main surface of the GaAs layer 2 becomes p-type. It is formed as 8 layers of QaA. Further, by lowering the same temperature of the furnace body, a p-type AtGaAg growth layer 4 having an At composition ratio X of about 0.85 to 0.95 in p-type AtxGa1-xAs is formed on the main surface of this diffusion layer 3 by about 100X. Precipitate to some extent. Next, this AlGaAs
An antireflection film 5 having a good light transmittance such as a nitride film is formed on the main surface of the growth layer 4 to a thickness of about 100× by atmospheric pressure CVD, and a resist (not shown) is applied on the antireflection film 5. This resist film is patterned using photolithography to selectively form openings, the anti-reflection film corresponding to the openings is removed using plasma etching, and the lower AlGaAs is etched using a hydrofluoric acid-based etching solution. Remove the growth layer. Subsequently, T is deposited on the surface of the diffusion layer 30 in the exposed contact hole portion by sputtering or vapor deposition.
After forming a metal film made of i/Ag, etc., the first metal electrode 6.7 is formed by selectively patterning this metal film using photolithography and chemical etching. Next, after coating the diffusion layer 3 side of the GaAs substrate 1 with a protective film having high chemical resistance, the back surface of the GaAs substrate 1 was etched by several tens of μm using a nitric acid-based etchant.
Au/
N-type second metal electrode 8 made of Ni/Au/Ag, etc.
is formed, and the substrate is heated to about 400°C in a furnace,
A GaAs solar cell is manufactured by performing sintering to improve electrical ohmic properties.
しかしながら、従来のＧａＡｓ太陽電池の製造方法は、
ｐ形波散層３の主表面領域に第１の金属電極６，７を形
成する際、反射防止膜５とｐ形ＡｌＧａＡｓ成長層４と
が選択的にエツチング除去されるので、第１の金属電極
６．７と反射防止膜この問お゛よび第１の金属電極６，
７とＡｌＧａＡｓ成長層４この間に溝状の隙間９が発生
し、プロセス途中の残留酸の影ｑｉまたは信頼性での耐
湿試験でＡｌＧａＡｓ成長層４が腐蝕してＧａＡｓ太陽
電池の電気的特性を低下させる。また、 ＡｔｘＧａｌ
−ｘＡａ中のＡｔ組成比Ｘを多くすると、大気中の酸素
による腐蝕（酸化）が著しくなり、第１の金属電極６゜
Ｔを直接ＡｔＧ１Ａｓ成長層４上に形成してもＡｔ組成
比Ｘを多くすると、ＡｌＧａＡｓ成長層４と第１の金属
電極６，７この界面から剥離が発生するなどの問題があ
った。However, the conventional method for manufacturing GaAs solar cells is
When forming the first metal electrodes 6 and 7 on the main surface region of the p-type wave diffusion layer 3, the anti-reflection film 5 and the p-type AlGaAs growth layer 4 are selectively etched away, so that the first metal Electrode 6.7 and anti-reflection film This question and the first metal electrode 6,
A groove-shaped gap 9 is generated between GaAs growth layer 7 and AlGaAs growth layer 4, and the AlGaAs growth layer 4 is corroded by the influence of residual acid during the process or during a moisture resistance test for reliability, reducing the electrical characteristics of the GaAs solar cell. let Also, AtxGal
-xIf the At composition ratio X in Aa is increased, corrosion (oxidation) due to oxygen in the atmosphere becomes significant, and even if the first metal electrode 6°T is formed directly on the AtG1As growth layer 4, the At composition ratio If the number is increased, there is a problem that peeling occurs from the interface between the AlGaAs growth layer 4 and the first metal electrodes 6, 7.
この発明は前述した従来の問題に鑑みてなされたもので
、その目的は金属電極とｐ形ＡｔＧａＡ３成長層この間
に形成される隙間の影響によるｐ形ＡｌＧａＡｓ成長層
の腐蝕（酸化）の発生を防止することができるＧａＡｓ
太陽電池の製造方法を提供することにある。This invention was made in view of the conventional problems mentioned above, and its purpose is to prevent corrosion (oxidation) of the p-type AlGaAs growth layer due to the effect of the gap formed between the metal electrode and the p-type AtGaA3 growth layer. GaAs that can
An object of the present invention is to provide a method for manufacturing a solar cell.
この発明に係るＧａＡｓ太陽′成池の製造方法は、ｐ形
拡散層上に形成されたｐ形ＡｌＧａＡｓ層の表面に反射
防止膜を形成し、この反射防止膜およびｐ形ＡｌＧａＡ
ｓ層に選択的に開孔部を連続して形成し、この開孔部内
に露出したｐ形拡散層の表面に、ｐ＋形ＧａＡｓ層を形
成した後、このｐ形ＱａＡａ層の表面に第１の金属電極
を形成するものである。The method for manufacturing a GaAs solar pond according to the present invention includes forming an anti-reflection film on the surface of a p-type AlGaAs layer formed on a p-type diffusion layer, and forming the anti-reflection film and the p-type AlGaAs
After selectively and continuously forming openings in the s-layer and forming a p+ type GaAs layer on the surface of the p-type diffusion layer exposed in the openings, a first layer is formed on the surface of the p-type QaAa layer. This is used to form metal electrodes.
この発明のＱａＡ！ｌ太陽電池の製造方法においては、
ｐ形拡散層の表面く形成されたｐ＋形ＧａＡｓ層がｐ形
ＡｌＧａＡｓ層の腐蝕（酸化）を抑制するとともにｐｎ
接合までの距離を長くさせ、電極材料の拡散による接合
破壊を抑制する。また、このｐ＋形ＧａＡｓ層がｐ形Ａ
ｔＧ ａ Ａ ｓ層の露出部に付着して横方向の腐蝕（
酸化）を抑制する。QaA of this invention! l In the method for manufacturing solar cells,
The p + type GaAs layer formed on the surface of the p type diffusion layer suppresses corrosion (oxidation) of the p type AlGaAs layer and
The distance to the bond is increased to suppress bond breakdown due to diffusion of the electrode material. Moreover, this p + type GaAs layer is a p type A
It adheres to the exposed parts of the tG a As layer and causes lateral corrosion (
oxidation).
以下、図面を用いてこの発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図はこの発明によるＧａＡｓ太陽電池の製造方法の
一実施例を説明する図で同図（ａ）は平面図、同図（ｂ
）はそのＡ−Ａ’断面図であシ、前述の図と同一部分ま
たは相当する部分には同一符号を付しである。同図にお
いて、低比抵抗のｎ＋形ＧａＡ３基板１を用いて液相エ
ピタキシャル成長法によシ低比抵抗ｐ形ＡｌＧａＡｓ成
長層４の形成までは前述した製造方法と同じであるので
その説明は省略する。FIG. 1 is a diagram illustrating an embodiment of the method for manufacturing a GaAs solar cell according to the present invention, in which (a) is a plan view and (b) is a plan view.
) is a cross-sectional view taken along the line AA', and the same or corresponding parts as in the previous figures are given the same reference numerals. In the figure, the manufacturing method up to the formation of the low resistivity p-type AlGaAs growth layer 4 using the liquid phase epitaxial growth method using the low resistivity n+ type GaA3 substrate 1 is the same as the above-mentioned manufacturing method, so the explanation thereof will be omitted. .
また、前述したと同様にこのＡｔＧａＡＢ成長屓４の表
面に常圧ＣＶＤ法により反射防止膜５を数百芙程度の厚
さに形成したうえ、この反射防止膜５上に図示しないレ
ジストを塗布し、このにシスト膜を写真製版技術でバタ
ーニングして選択的に開孔部を形成し、この開孔部に相
当する反射防止膜およびその下部のｐ形ＡＬＧ ａ Ａ
ｇ成長層をプラズマエツチング法により連続して除去
し、下部側のｐ形拡散層を露出させる。次に残存したレ
ジスト材を有機溶剤で完全に除去した後、ＭＯＣＶＤ炉
内に挿入し、前記開孔部内に露出したｐ形拡散層の表面
に、下記の反応式でもってｐ＋形ＧａＡｓ成長層１０を
数１００１程度の厚さに形成する。なお、このｐ＋形Ｇ
ａＡｓ成長層１０のキャリア濃度は１０ 個／ｃｒｎ３
以上が望ましい。Further, in the same manner as described above, an antireflection film 5 is formed on the surface of the AtGaAB growth layer 4 to a thickness of about several hundred centimeters by atmospheric pressure CVD, and a resist (not shown) is coated on the antireflection film 5. Then, the cyst film is buttered by photolithography to selectively form openings, and the anti-reflection film corresponding to the openings and the p-type ALG a A below it are formed.
The g-grown layer is continuously removed by plasma etching to expose the p-type diffusion layer on the lower side. Next, after completely removing the remaining resist material with an organic solvent, the resist material is inserted into an MOCVD furnace, and a p+ type GaAs growth layer 10 is formed on the surface of the p type diffusion layer exposed in the opening using the following reaction formula. is formed to a thickness of about 1001. Furthermore, this p+ type G
The carrier concentration of the aAs growth layer 10 is 10 pieces/crn3
The above is desirable.
（Ｃ２Ｈ５１Ｚ Ｚｎ ＋（ＣＨ３）ｓ Ｇａ＋ＡｓＨ
３４ＧＡＡｓ十３ＣＨ４
次にこの開孔部内に形成されたｐ＋形ＧａＡ４成長層１
０の表面に前述したと同様にスパッタ法また蒸着法によ
りＴｉ／Ａｇなどからなる金属膜を形成した後、この金
属膜を写真製版技術および化学エッチ法で選択的にパタ
ーニングすることによって、第１の金属電極６．７を形
成する。次に、このｐ形ＧａＡＢ成長層１０の表面に形
成された第１の金属電極６．７を写真製版技術でマスク
し１周辺部に付着した金属電極材料および反射防止膜５
０表面部に付着している不完全結晶のｐ形ＡｌＧａＡｓ
成長層を除去する。次いで、このＧａＡｓ基板１の裏面
に前述したと同様な方法によ、９ｎ形の第２の金属電極
８を形成し、当該基板を炉内で約４００℃で３０分程度
に加熱してシンタリングを行ない、電気的なオーミック
性を良好にさせてＧａＡｓ太陽電池を完成する。(C2H51Z Zn + (CH3)s Ga + AsH
34GAAs13CH4 Next, p+ type GaA4 growth layer 1 formed in this opening.
After forming a metal film made of Ti/Ag or the like on the surface of 0 by sputtering or vapor deposition in the same manner as described above, this metal film is selectively patterned by photolithography and chemical etching. A metal electrode 6.7 is formed. Next, the first metal electrode 6.7 formed on the surface of this p-type GaAB growth layer 10 is masked by photolithography, and the metal electrode material and anti-reflection film 5 attached to the periphery of the first metal electrode 6.7 are masked.
0 surface of incompletely crystalline p-type AlGaAs
Remove the growth layer. Next, a 9n-type second metal electrode 8 is formed on the back surface of this GaAs substrate 1 in the same manner as described above, and the substrate is sintered by heating it in a furnace at about 400° C. for about 30 minutes. This process improves the electrical ohmic properties and completes the GaAs solar cell.
以上説明したようにこの発明は、低比抵抗を有するｐ形
拡散層上にｐ＋形ＧａＡｓ層を形成し、このｐ形Ｇ ａ
Ａ ６層の表面に第１の金属電極を形成したので、ｐ
形ＡｌＧａＡｓ層の腐蝕（酸化）が抑制されるとともに
、ｐｎ接合までの距離が長くなり、電極材料の拡散によ
る接合破壊が抑制され、高品質のＧａＡｓ太陽電池が得
られるという極めて優れた効果を有する。As explained above, the present invention forms a p + type GaAs layer on a p type diffusion layer having low resistivity, and
A: Since the first metal electrode was formed on the surface of the 6th layer, p
It has the extremely excellent effect of suppressing corrosion (oxidation) of the AlGaAs layer, increasing the distance to the pn junction, suppressing junction breakdown due to diffusion of electrode material, and obtaining a high-quality GaAs solar cell. .
第１図（ａ） 、 （ｂ）はこの発明によるＧａＡｓ太
陽電池の製造方法の一実施例を説明するだめの平面図。
そのＡ−Ａ’断面図、第２図（ａ） 、 （ｂ）は従来
のＧａＡｓ太陽電池の製造方法を説明するための平面図
、そのＡ−Ａ’断面図である。
ｊ ＊””ｎ＋形ＧａＡｇ基板２ ＩＩ ＠ １１１１
７７−形ＧａＡｓ層％３・・・・ｐ形拡散層、４・・・
・ｐ形ＡｔＧＩＬＡ８成長層、５・拳・・反射防止膜、
６゜Ｔ・・・・第１の金属電極、８・・・・第２の金属
電極、１０・・・・ｐ 形ＧａＡｓ成長層。FIGS. 1(a) and 1(b) are plan views illustrating an embodiment of the method for manufacturing a GaAs solar cell according to the present invention. FIGS. 2(a) and 2(b) are a plan view and a sectional view taken along line AA' for explaining a conventional method of manufacturing a GaAs solar cell. j *””n+ type GaAg substrate 2 II @ 1111
77-type GaAs layer %3... p-type diffusion layer, 4...
・p-type AtGILA8 growth layer, 5・fist・anti-reflection coating,
6°T: first metal electrode, 8: second metal electrode, 10: p-type GaAs growth layer.
Claims (1)
された高比抵抗をもつｎ形ＧａＡｓ層と、前記ｎ形Ｇａ
Ａｓ層の主表面に順次形成されたそれぞれｐ形を有する
低比抵抗のｐ形拡散層およびｐ形ＡｌＧａＡｓ層と、前
記ｐ形ＡｌＧａＡｓ層上の表面に選択的に形成された反
射防止膜と、前記ｐ形ＡｌＧａＡｓ層上の表面に前記反
射防止膜に対応した前記ｐ形ＡｌＧａＡｓ層の領域を除
いて形成された第１の金属電極と、前記ｎ形ＧａＡｓ基
板の裏面に形成された第２の金属電極とから構成される
ＧａＡｓ太陽電池において、前記反射防止膜およびｐ形
ＡｌＧａＡｓ層に選択的に開孔部を連続して形成し、こ
の開孔部内に露出したｐ形拡散層の表面に低比抵抗のｐ
形ＧａＡｓ層を形成した後、このｐ形ＧａＡｓ層の表面
に前記第１の金属電極を形成することを特徴とするＧａ
Ａｓ太陽電池の製造方法。an n-type GaAs layer with high specific resistance formed on one main surface of an n-type GaAs substrate with low specific resistance;
a low resistivity p-type diffusion layer and a p-type AlGaAs layer each having p-type, which are sequentially formed on the main surface of the As layer; and an antireflection film selectively formed on the surface of the p-type AlGaAs layer; A first metal electrode formed on the surface of the p-type AlGaAs layer except for a region of the p-type AlGaAs layer corresponding to the antireflection film, and a second metal electrode formed on the back surface of the n-type GaAs substrate. In a GaAs solar cell composed of a metal electrode, openings are selectively and continuously formed in the antireflection film and the p-type AlGaAs layer, and a low-temperature layer is formed on the surface of the p-type diffusion layer exposed in the openings. specific resistance p
After forming the p-type GaAs layer, the first metal electrode is formed on the surface of the p-type GaAs layer.
A method for manufacturing an As solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61241656A JPS6395679A (en) | 1986-10-09 | 1986-10-09 | Manufacture of gaas solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61241656A JPS6395679A (en) | 1986-10-09 | 1986-10-09 | Manufacture of gaas solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6395679A true JPS6395679A (en) | 1988-04-26 |
Family
ID=17077563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61241656A Pending JPS6395679A (en) | 1986-10-09 | 1986-10-09 | Manufacture of gaas solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6395679A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016163046A (en) * | 2015-03-02 | 2016-09-05 | アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ | Solar cell device |
-
1986
- 1986-10-09 JP JP61241656A patent/JPS6395679A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016163046A (en) * | 2015-03-02 | 2016-09-05 | アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ | Solar cell device |
| US10763385B2 (en) | 2015-03-02 | 2020-09-01 | Azur Space Solar Power Gmbh | Solar cell device |
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