JPS5544721A - Extraneous semiconductor joining matter and its preparation - Google Patents

Extraneous semiconductor joining matter and its preparation

Info

Publication number
JPS5544721A
JPS5544721A JP11784978A JP11784978A JPS5544721A JP S5544721 A JPS5544721 A JP S5544721A JP 11784978 A JP11784978 A JP 11784978A JP 11784978 A JP11784978 A JP 11784978A JP S5544721 A JPS5544721 A JP S5544721A
Authority
JP
Japan
Prior art keywords
joining
matter
monocrystal
vessel
extraneous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11784978A
Other languages
Japanese (ja)
Other versions
JPS5544452B2 (en
Inventor
Nobuyuki Oguchi
Takeshi Masumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Institute for Metals
Original Assignee
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Institute for Metals filed Critical National Research Institute for Metals
Priority to JP11784978A priority Critical patent/JPS5544721A/en
Publication of JPS5544721A publication Critical patent/JPS5544721A/en
Publication of JPS5544452B2 publication Critical patent/JPS5544452B2/ja
Granted legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To use this extraneous semiconductor joining matter as an element that forms an electromotive-force element and a semiconductor laser element, by constituting the joining matter by joining a specified, epitaxial, monocrystal plate onto a ferromagnetic semiconductor CdCr2Se4 monocrystal.
CONSTITUTION: A 2% Ag added P-type CdCr2Se4 monocrystal beforehand prepared by means of a gaseous-phase growth method is mirror-surface ground in parallel with a surface 111, corroded for ten minutes in a solution manufactured by mixing HCl and 35wt% H2O2 at the rate of 10 to 1 in volume ratio, and washed by pure water, thus preparing a substrate with approximate 1.2×10-2cm2 surface area. The substrate is admitted into one end of a vessel in quartz with a 10mm inner diameter and 60mm length, 40mg of 1.5% Ag added P-type HgCr2Se4 powder is charged into the other end, and the vessel is sealed under approximate 10-6 Torr vacuum, thus preparing a manufacturing vessel. The vessel is maintained in an electric furnace with uniform temperature distribution for a fixed time, and a CdxHg1-xCr2Se4 layer (Where X=0≤X<1) is brought to an epitaxial condition that an azimuth is equal to the CdCr2Se4 monocrystal substrate, thus producing this excellent extraneous joining matter.
COPYRIGHT: (C)1980,JPO&Japio
JP11784978A 1978-09-27 1978-09-27 Extraneous semiconductor joining matter and its preparation Granted JPS5544721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11784978A JPS5544721A (en) 1978-09-27 1978-09-27 Extraneous semiconductor joining matter and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11784978A JPS5544721A (en) 1978-09-27 1978-09-27 Extraneous semiconductor joining matter and its preparation

Publications (2)

Publication Number Publication Date
JPS5544721A true JPS5544721A (en) 1980-03-29
JPS5544452B2 JPS5544452B2 (en) 1980-11-12

Family

ID=14721791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11784978A Granted JPS5544721A (en) 1978-09-27 1978-09-27 Extraneous semiconductor joining matter and its preparation

Country Status (1)

Country Link
JP (1) JPS5544721A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002070793A1 (en) * 2001-03-02 2002-09-12 Japan Science And Technology Corporation Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
CN103439673A (en) * 2013-07-24 2013-12-11 华中科技大学 Method for calibrating magnetic field strength through light-emitting rare earth materials

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2850066C (en) 2011-10-05 2020-03-24 Panasonic Corporation An image coding and decoding method using prediction information candidates for prediction unit sub-blocks

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002070793A1 (en) * 2001-03-02 2002-09-12 Japan Science And Technology Corporation Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
CN103439673A (en) * 2013-07-24 2013-12-11 华中科技大学 Method for calibrating magnetic field strength through light-emitting rare earth materials

Also Published As

Publication number Publication date
JPS5544452B2 (en) 1980-11-12

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