JPS5544721A - Extraneous semiconductor joining matter and its preparation - Google Patents
Extraneous semiconductor joining matter and its preparationInfo
- Publication number
- JPS5544721A JPS5544721A JP11784978A JP11784978A JPS5544721A JP S5544721 A JPS5544721 A JP S5544721A JP 11784978 A JP11784978 A JP 11784978A JP 11784978 A JP11784978 A JP 11784978A JP S5544721 A JPS5544721 A JP S5544721A
- Authority
- JP
- Japan
- Prior art keywords
- joining
- matter
- monocrystal
- vessel
- extraneous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To use this extraneous semiconductor joining matter as an element that forms an electromotive-force element and a semiconductor laser element, by constituting the joining matter by joining a specified, epitaxial, monocrystal plate onto a ferromagnetic semiconductor CdCr2Se4 monocrystal.
CONSTITUTION: A 2% Ag added P-type CdCr2Se4 monocrystal beforehand prepared by means of a gaseous-phase growth method is mirror-surface ground in parallel with a surface 111, corroded for ten minutes in a solution manufactured by mixing HCl and 35wt% H2O2 at the rate of 10 to 1 in volume ratio, and washed by pure water, thus preparing a substrate with approximate 1.2×10-2cm2 surface area. The substrate is admitted into one end of a vessel in quartz with a 10mm inner diameter and 60mm length, 40mg of 1.5% Ag added P-type HgCr2Se4 powder is charged into the other end, and the vessel is sealed under approximate 10-6 Torr vacuum, thus preparing a manufacturing vessel. The vessel is maintained in an electric furnace with uniform temperature distribution for a fixed time, and a CdxHg1-xCr2Se4 layer (Where X=0≤X<1) is brought to an epitaxial condition that an azimuth is equal to the CdCr2Se4 monocrystal substrate, thus producing this excellent extraneous joining matter.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11784978A JPS5544721A (en) | 1978-09-27 | 1978-09-27 | Extraneous semiconductor joining matter and its preparation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11784978A JPS5544721A (en) | 1978-09-27 | 1978-09-27 | Extraneous semiconductor joining matter and its preparation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5544721A true JPS5544721A (en) | 1980-03-29 |
JPS5544452B2 JPS5544452B2 (en) | 1980-11-12 |
Family
ID=14721791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11784978A Granted JPS5544721A (en) | 1978-09-27 | 1978-09-27 | Extraneous semiconductor joining matter and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5544721A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070793A1 (en) * | 2001-03-02 | 2002-09-12 | Japan Science And Technology Corporation | Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
CN103439673A (en) * | 2013-07-24 | 2013-12-11 | 华中科技大学 | Method for calibrating magnetic field strength through light-emitting rare earth materials |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2850066C (en) | 2011-10-05 | 2020-03-24 | Panasonic Corporation | An image coding and decoding method using prediction information candidates for prediction unit sub-blocks |
-
1978
- 1978-09-27 JP JP11784978A patent/JPS5544721A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070793A1 (en) * | 2001-03-02 | 2002-09-12 | Japan Science And Technology Corporation | Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
CN103439673A (en) * | 2013-07-24 | 2013-12-11 | 华中科技大学 | Method for calibrating magnetic field strength through light-emitting rare earth materials |
Also Published As
Publication number | Publication date |
---|---|
JPS5544452B2 (en) | 1980-11-12 |
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