JPS5538058A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5538058A JPS5538058A JP11154178A JP11154178A JPS5538058A JP S5538058 A JPS5538058 A JP S5538058A JP 11154178 A JP11154178 A JP 11154178A JP 11154178 A JP11154178 A JP 11154178A JP S5538058 A JPS5538058 A JP S5538058A
- Authority
- JP
- Japan
- Prior art keywords
- recombination
- generation
- center
- depletion layer
- layer region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To shorten inverse recovery time without increasing leakage currents in the reverse direction, by selectively distributing the center of the recombination of the generation of carriers only at the outside of a depletion layer region.
CONSTITUTION: The center of the recombination of the generation of carriers is distributed at the outside of a depletion layer region of a layer n of P+n junction in concentration higher than its existence in the depletion layer region. the irradiation of electron rays, the irradiation of protons and the shooting of Au ions and Pt ions, for example, are used for obtaining the distribution of the concentration of the center of the recombination of the generation. Au, etc. are thermally diffused at temperature lower than conventional devices. Since the concentration of the center of the recombination of generation at the outside of the depletion layer region of the layer n decides inverse recovery time in a P+n diode, and the center of the recombination of generation in the depletion layer region increases leakage currents, the characteristics of switching can be improved if the center of the recombination of generation is distributed only at the outside of the depletion layer region.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11154178A JPS5538058A (en) | 1978-09-11 | 1978-09-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11154178A JPS5538058A (en) | 1978-09-11 | 1978-09-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5538058A true JPS5538058A (en) | 1980-03-17 |
Family
ID=14563973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11154178A Pending JPS5538058A (en) | 1978-09-11 | 1978-09-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5538058A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
| JPH0629558A (en) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | Electrostatic induction diode having planar structure |
| JPH07106605A (en) * | 1993-10-05 | 1995-04-21 | Toyo Electric Mfg Co Ltd | High speed diode |
| EP0977271A2 (en) * | 1998-07-28 | 2000-02-02 | Hitachi, Ltd. | Semiconductor IGBT module |
| JP2007242765A (en) * | 2006-03-07 | 2007-09-20 | Toyota Motor Corp | Diode, manufacturing method, and method for controlling inverse recovery current |
| JPWO2016157935A1 (en) * | 2015-04-02 | 2017-04-27 | 三菱電機株式会社 | Method for manufacturing power semiconductor device |
-
1978
- 1978-09-11 JP JP11154178A patent/JPS5538058A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
| JPH0629558A (en) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | Electrostatic induction diode having planar structure |
| JPH07106605A (en) * | 1993-10-05 | 1995-04-21 | Toyo Electric Mfg Co Ltd | High speed diode |
| EP0977271A2 (en) * | 1998-07-28 | 2000-02-02 | Hitachi, Ltd. | Semiconductor IGBT module |
| EP0977271A3 (en) * | 1998-07-28 | 2001-02-28 | Hitachi, Ltd. | Semiconductor IGBT module |
| JP2007242765A (en) * | 2006-03-07 | 2007-09-20 | Toyota Motor Corp | Diode, manufacturing method, and method for controlling inverse recovery current |
| JPWO2016157935A1 (en) * | 2015-04-02 | 2017-04-27 | 三菱電機株式会社 | Method for manufacturing power semiconductor device |
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