JPS5546555A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5546555A
JPS5546555A JP12020278A JP12020278A JPS5546555A JP S5546555 A JPS5546555 A JP S5546555A JP 12020278 A JP12020278 A JP 12020278A JP 12020278 A JP12020278 A JP 12020278A JP S5546555 A JPS5546555 A JP S5546555A
Authority
JP
Japan
Prior art keywords
semiconductor device
high resistance
layer
resistance buffer
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12020278A
Other languages
Japanese (ja)
Inventor
Michihiro Ito
Kazuaki Segawa
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12020278A priority Critical patent/JPS5546555A/en
Publication of JPS5546555A publication Critical patent/JPS5546555A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To reduce the noise figure of a semiconductor device and enhance the reverse gate voltage thereof by forming N+-type layer only in N-type layer within 0.2μm from the boundary with high resistance buffer layer in GaAs of a semi- insulating substrate-high resistance buffer layer-N-type layer configuration of the semiconductor device.
CONSTITUTION: Approx. 2×1017cm-3 of carrier density is formed in N-type GaAs epitaxial layer within 0.1μm from the boundary with a high resistance buffer layer and 1.2×1017cm-3 is formed in the other area in density distribution. When a field effect transistor is fabricated by a substrate thus formed, it can increase its effective carrier density and obtain low noise figure. Since the carrier density is decreased from the high density area to the surface, it can also prevent its reverse gate voltage from decreasing.
COPYRIGHT: (C)1980,JPO&Japio
JP12020278A 1978-09-28 1978-09-28 Semiconductor device Pending JPS5546555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12020278A JPS5546555A (en) 1978-09-28 1978-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12020278A JPS5546555A (en) 1978-09-28 1978-09-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5546555A true JPS5546555A (en) 1980-04-01

Family

ID=14780423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12020278A Pending JPS5546555A (en) 1978-09-28 1978-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5546555A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61155468U (en) * 1985-03-20 1986-09-26
JPS61181184U (en) * 1985-04-30 1986-11-12
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH0256989U (en) * 1988-10-17 1990-04-24
JPH0620521U (en) * 1992-08-20 1994-03-18 北越消雪機械工業株式会社 Water pipe for snow-removing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61155468U (en) * 1985-03-20 1986-09-26
JPS61181184U (en) * 1985-04-30 1986-11-12
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device
JPH0256989U (en) * 1988-10-17 1990-04-24
JPH0620521U (en) * 1992-08-20 1994-03-18 北越消雪機械工業株式会社 Water pipe for snow-removing device

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