JPS553143A - Target for electron emission amplifier tube - Google Patents
Target for electron emission amplifier tubeInfo
- Publication number
- JPS553143A JPS553143A JP7544378A JP7544378A JPS553143A JP S553143 A JPS553143 A JP S553143A JP 7544378 A JP7544378 A JP 7544378A JP 7544378 A JP7544378 A JP 7544378A JP S553143 A JPS553143 A JP S553143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active area
- target
- electron emission
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To improve the frequency characteristics of an electron emission amplifier tube by providing an insulator layer to surround a diode active area in a semiconductor substrate layer.
CONSTITUTION: A diode is formed by providing a semiconductor layer 3 in the vicinity of the surface of a semiconductor layer 2 formed on a semiconductor substrate 1. A porous insulator layer 21 is provided in the layer 2 to surround the periphery of the diode active area, and a porous insulator layer 22 is further provided from the layer 21 on the layer 2 to coat the periphery of the diode active area. A thin metallic layer 5 for passing primary electron is provided on the active area, and a thick metallic layer 6 is provided further on the periphery of the layer 5 to coat only the layer 21 on the layer 22. Since the layer 6 is thus coated on the layer 22 to thereby reduce the static capacity of capacitors C4-C6 as compared with the conventional one to thus reduce the static capacity of the target, it can improve the frequency characteristics of the amplifier.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7544378A JPS553143A (en) | 1978-06-23 | 1978-06-23 | Target for electron emission amplifier tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7544378A JPS553143A (en) | 1978-06-23 | 1978-06-23 | Target for electron emission amplifier tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS553143A true JPS553143A (en) | 1980-01-10 |
JPS633469B2 JPS633469B2 (en) | 1988-01-23 |
Family
ID=13576385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7544378A Granted JPS553143A (en) | 1978-06-23 | 1978-06-23 | Target for electron emission amplifier tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553143A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227749A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device, and method of manufacturing semiconductor device |
JP2007227750A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device and its manufacturing method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157070A (en) * | 1980-05-07 | 1981-12-04 | Fuji Electric Co Ltd | Semiconductor radioactive rays detector |
-
1978
- 1978-06-23 JP JP7544378A patent/JPS553143A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157070A (en) * | 1980-05-07 | 1981-12-04 | Fuji Electric Co Ltd | Semiconductor radioactive rays detector |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227749A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device, and method of manufacturing semiconductor device |
JP2007227750A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device and its manufacturing method |
JP4584159B2 (en) * | 2006-02-24 | 2010-11-17 | セイコーインスツル株式会社 | Semiconductor device and manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS633469B2 (en) | 1988-01-23 |
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