JPS5565439A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5565439A
JPS5565439A JP13872478A JP13872478A JPS5565439A JP S5565439 A JPS5565439 A JP S5565439A JP 13872478 A JP13872478 A JP 13872478A JP 13872478 A JP13872478 A JP 13872478A JP S5565439 A JPS5565439 A JP S5565439A
Authority
JP
Japan
Prior art keywords
protective film
aluminum
electrodes
electrode
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13872478A
Other languages
Japanese (ja)
Other versions
JPS6048096B2 (en
Inventor
Ichiro Fujita
Toshihiko Ono
Toshio Kurahashi
Kazuo Tanaka
Akira Ooka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13872478A priority Critical patent/JPS6048096B2/en
Publication of JPS5565439A publication Critical patent/JPS5565439A/en
Publication of JPS6048096B2 publication Critical patent/JPS6048096B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Abstract

PURPOSE: To improve humidity resistance in a protective film, by fitting on the surface of a protective film a metal coated with an electrode by sputtering the protective film on a semiconductor substrate on which a bonding pad window is provided.
CONSTITUTION: Stainless steel electrodes 1 and 2, which are coated with aluminum, are placed opposite to each other. Semiconductor wafer 4 having protective film 4a fitted with exposed bonding pad 4b, is mounted on electrode 2. Electrodes 1 and 2 are placed in an argon atmosphere, a high frequency from high frequency source 3 is impressed, and protective film 4a is etched; and at the same time, the aluminum coating of electrodes 1 and 2 and the aluminum constituting pad 4b are partially sputtered. The aluminum atoms produced in this way are caused to attach to the surface of protective film 4a, and thereby the humidity resistance of the surface is improved and the reliability of the wafer is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP13872478A 1978-11-10 1978-11-10 Manufacturing method of semiconductor device Expired JPS6048096B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13872478A JPS6048096B2 (en) 1978-11-10 1978-11-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13872478A JPS6048096B2 (en) 1978-11-10 1978-11-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5565439A true JPS5565439A (en) 1980-05-16
JPS6048096B2 JPS6048096B2 (en) 1985-10-25

Family

ID=15228659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13872478A Expired JPS6048096B2 (en) 1978-11-10 1978-11-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6048096B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61175890U (en) * 1985-04-18 1986-11-01

Also Published As

Publication number Publication date
JPS6048096B2 (en) 1985-10-25

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