JPS5531327A - Microwave amplifier - Google Patents
Microwave amplifierInfo
- Publication number
- JPS5531327A JPS5531327A JP10446678A JP10446678A JPS5531327A JP S5531327 A JPS5531327 A JP S5531327A JP 10446678 A JP10446678 A JP 10446678A JP 10446678 A JP10446678 A JP 10446678A JP S5531327 A JPS5531327 A JP S5531327A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- gates
- drain
- microwave amplifier
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000009977 dual effect Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To obtain a microwave amplifier featuring the excellent frequency characteristics by making use of the fact that the power gain exists between the 1st and 2nd gates of the dual gate type FET. CONSTITUTION:Dual gate type FET1 is constituted by installing source 12, drain 13, 1st gate 14 and 2nd gate 15 each onto substrate 11. Gates 14 and 15 are connected to input terminal 19 and output terminal 20 via matching circuits 16 and 17 respectively. And the bias voltage is applied to gates 14 and 15 plus drain 13 through bias terminals 18, 21 and 22. At the same time, DC blocking capacitor 23 is connected to the drain. In such amplifier, the input signal is applied to terminal 19, and the output signal is extracted from terminal 20.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10446678A JPS5531327A (en) | 1978-08-29 | 1978-08-29 | Microwave amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10446678A JPS5531327A (en) | 1978-08-29 | 1978-08-29 | Microwave amplifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5531327A true JPS5531327A (en) | 1980-03-05 |
JPS6125245B2 JPS6125245B2 (en) | 1986-06-14 |
Family
ID=14381354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10446678A Granted JPS5531327A (en) | 1978-08-29 | 1978-08-29 | Microwave amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5531327A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61157821A (en) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | Automatic supervising device of thrust bearing device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0322953U (en) * | 1989-07-11 | 1991-03-11 |
-
1978
- 1978-08-29 JP JP10446678A patent/JPS5531327A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61157821A (en) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | Automatic supervising device of thrust bearing device |
Also Published As
Publication number | Publication date |
---|---|
JPS6125245B2 (en) | 1986-06-14 |
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