JPS6336154B2 - - Google Patents
Info
- Publication number
- JPS6336154B2 JPS6336154B2 JP9271680A JP9271680A JPS6336154B2 JP S6336154 B2 JPS6336154 B2 JP S6336154B2 JP 9271680 A JP9271680 A JP 9271680A JP 9271680 A JP9271680 A JP 9271680A JP S6336154 B2 JPS6336154 B2 JP S6336154B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- cutting
- insulator
- pressure sensor
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000012212 insulator Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dicing (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
本発明は半導体圧力センサに係り、特に半導体
チツプと絶縁台を同時に切断する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor pressure sensor, and more particularly to a method for simultaneously cutting a semiconductor chip and an insulating base.
一般に半導体圧力センサ等は、例えば特開昭55
−44786号公報に示すように、絶縁体の上に複数
の半導体ストレンゲージチツプが形成された半導
体ウエハが接着されたものを、半導体と絶縁体を
同時に切断することにより個々の半導体圧力セン
サに切離して製作されている。 In general, semiconductor pressure sensors, etc. are
As shown in Publication No. 44786, a semiconductor wafer with a plurality of semiconductor strain gauge chips formed on an insulator is separated into individual semiconductor pressure sensors by simultaneously cutting the semiconductor and the insulator. It is manufactured by
第１図は従来からの半導体圧力センサを示して
いる。 FIG. 1 shows a conventional semiconductor pressure sensor.
絶縁体１２の上面に半導体ストレンゲージチツ
プ１４が接着層１６を介して接着固定されてい
る。半導体ストレンゲージチツプ１４には、拡散
抵抗１８Ａ〜１８Ｄが形成され、中央部にダイヤ
フラム２０が形成されている。ダイヤフラム２０
の真下の絶縁体１２には、該絶縁体１２を貫通し
た貫通孔２２が穿れている。貫通孔２２を通して
測定圧がダイヤフラム部に導入されこの圧力によ
つてダイヤフラム２０が変形する。なお、符号２
４は半導体ストレンゲージチツプ１４と絶縁体１
２とを同時に切断した切断面であり、符号２６は
その時の取残し部分である。 A semiconductor strain gauge chip 14 is adhesively fixed to the upper surface of the insulator 12 via an adhesive layer 16. Diffused resistors 18A to 18D are formed in the semiconductor strain gauge chip 14, and a diaphragm 20 is formed in the center. diaphragm 20
A through hole 22 penetrating through the insulator 12 is bored in the insulator 12 directly below the insulator 12 . Measurement pressure is introduced into the diaphragm portion through the through hole 22, and the diaphragm 20 is deformed by this pressure. In addition, code 2
4 is a semiconductor strain gauge chip 14 and an insulator 1
This is the cut surface obtained by cutting 2 and 2 at the same time, and reference numeral 26 is the portion left at that time.
上記のように、半導体例えばシリコンと、絶縁
体例えばほう珪酸ガラスとが接着され一体化され
た物をダイサーで切断する場合には、シリコンの
みを切断する場合に使用する粒度の細いブレード
では絶縁体であるガラスが切断できない。このた
め、粒度の大きいブレードを使用してシリコンと
ガラスを同時に切断せざるを得ない。この時、シ
リコン側から切断すると、シリコン表面に極めて
大きなチツピング（このチツピングは300μｍに
達することもある）が発生する不都合が生じる。 As mentioned above, when using a dicer to cut an integrated object in which a semiconductor such as silicon and an insulator such as borosilicate glass are bonded together, the fine-grained blade used to cut only the silicon will cut the insulator. glass cannot be cut. Therefore, it is necessary to use a blade with a large grain size to cut silicon and glass at the same time. At this time, cutting from the silicon side causes the disadvantage that extremely large chippings (this chipping can reach 300 μm) occur on the silicon surface.
このため、従来法ではチツピングが拡散抵抗１
８Ａ〜１８Ｄの一部に達しないように、これらの
拡散抵抗を半導体チツプの内側に配置しなければ
ならず、半導体チツプ面積を有効に使用し得ない
欠点があつた。 For this reason, in the conventional method, chipping is caused by a diffusion resistance of 1
These diffused resistors must be placed inside the semiconductor chip so that they do not reach part of the semiconductor chips 8A to 18D, which has the disadvantage that the area of the semiconductor chip cannot be used effectively.
本発明の目的は上記の欠点に鑑み、切断時に半
導体に発生するチツピングが極めて少ない半導体
圧力センサ切断方法を提供するにある。 SUMMARY OF THE INVENTION In view of the above-mentioned drawbacks, an object of the present invention is to provide a method for cutting a semiconductor pressure sensor with extremely little chipping occurring in the semiconductor during cutting.
本発明により上記の目的は、半導体と絶縁体を
それぞれ異なつたブレードで切断することにより
達成される。 According to the present invention, the above object is achieved by cutting the semiconductor and the insulator with different blades.
以下、本発明の一実施例を図面に従つて説明す
る。 An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明に係る半導体センサ切断方法の
一実施例を示す説明図である。 FIG. 2 is an explanatory diagram showing an embodiment of the semiconductor sensor cutting method according to the present invention.
絶縁体（例えばほう珪酸ガラス）２８の上面に
半導体ウエハ（例えばシリコン）状態の半導体ス
トレンゲージチツプ３０が接着されている。この
半導体ストレンゲージチツプ３０にはダイヤフラ
ム３２が形成され、このダイヤフラム３２の上面
には抵抗体が拡散されている。ダイヤフラム３２
の下側の絶縁体２８には圧力導入用の孔３４が穿
れている。半導体ストレンゲージチツプ３０の間
にはダイヤフラム３２をエツチングして形成する
時に同時にエツチングして形成した空間３６が設
けられている。 A semiconductor strain gauge chip 30 in the form of a semiconductor wafer (eg, silicon) is bonded to the upper surface of an insulator (eg, borosilicate glass) 28. As shown in FIG. A diaphragm 32 is formed on the semiconductor strain gauge chip 30, and a resistor is diffused on the upper surface of the diaphragm 32. diaphragm 32
The lower insulator 28 has a hole 34 for introducing pressure. A space 36 is provided between the semiconductor strain gauge chips 30, which is etched at the same time as the diaphragm 32 is etched.
符号３８は半導体のみを切断するブレードの切
断跡を示し、符号４０は絶縁体２８を切断するダ
イサーの切断跡を示している。 Reference numeral 38 indicates the cutting mark of the blade that cuts only the semiconductor, and reference numeral 40 indicates the cutting mark of the dicer that cuts the insulator 28.
次に上記の半導体圧力センサの切断方法につい
て説明する。半導体ウエハ側から先ずシリコン専
用ブレード（例えばブレード幅50μｍ、粒度
＃1500）を用いて高速度で符号３８に沿つて切断
する。この時半導体ウエハ裏面には絶縁体２８表
面に接するように空間３６が形成されているた
め、絶縁体表面まで切込むことなくして半導体ウ
エハを専用のブレードで切断することができる。
従つて、半導体を専用のブレードで切断するの
で、半導体ストレンゲージチツプ３０に生じるチ
ツピングは従来通り小さく保つことができる。 Next, a method for cutting the semiconductor pressure sensor described above will be explained. First, the semiconductor wafer is cut along the line 38 at high speed using a blade exclusively for silicon (for example, blade width 50 μm, grain size #1500). At this time, since a space 36 is formed on the back surface of the semiconductor wafer so as to be in contact with the surface of the insulator 28, the semiconductor wafer can be cut with a dedicated blade without cutting to the surface of the insulator.
Therefore, since the semiconductor is cut with a dedicated blade, the chipping that occurs in the semiconductor strain gauge chip 30 can be kept small as before.
次に絶縁体（ガラス）専用ブレード（例えば
GSDレンジタイプでブレード幅300μｍ、粒度
＃320）を用いて極めて低速度で絶縁体２８を符
号４０に沿つて切断する。この時、半導体ウエハ
の予め加工した溝壁部に、ガラス加工時の粒度の
粗いブレードが接触しない程度の溝の大きさを保
つように加工しておく必要がある。一般にブレー
ド幅は加工深さの約10分の１は必要とされている
ため例えば３mmの深さのガラス加工をする場合に
は約300μｍのブレードが必要となる。従つて半
導体ウエハ切断溝３６の間隔は300μｍ以上とつ
ておく必要がある。 Next, a blade dedicated to insulators (glass) (e.g.
The insulator 28 is cut along the line 40 at a very low speed using a GSD range type blade with a blade width of 300 μm and a grain size of #320. At this time, it is necessary to process the pre-processed groove wall portion of the semiconductor wafer so that the size of the groove is maintained so that it does not come into contact with a coarse-grained blade during glass processing. Generally, the width of the blade is required to be about one-tenth of the processing depth, so for example, when processing glass to a depth of 3 mm, a blade of about 300 μm is required. Therefore, the interval between the semiconductor wafer cutting grooves 36 must be set at 300 μm or more.
また、絶縁体切断に際し残り部分４２を残すこ
とにより、絶縁体切断後も複数個の半導体圧力セ
ンサが繋がつた状態を保持することができる。こ
のため切断くずの洗浄等を一括して行うことがで
きるため取扱いが極めて便利となる。残り部分４
２には加工による残留歪が入つているため簡単に
割ることができる。従つて洗浄後各半導体ストレ
ンゲージチツプ３０の部分に割れば、独立した半
導体圧力センサを得ることができる。 Further, by leaving the remaining portion 42 when cutting the insulator, it is possible to maintain a state in which the plurality of semiconductor pressure sensors are connected even after cutting the insulator. Therefore, cleaning of cutting waste can be done all at once, making handling extremely convenient. remaining part 4
2 contains residual strain from machining, so it can be easily broken. Therefore, by dividing each semiconductor strain gauge chip 30 into parts after cleaning, an independent semiconductor pressure sensor can be obtained.
第３図は上記の切断方法によつて作られた半導
体圧力センサを示すものである。従来のものに比
べて切断部分によりブレードの粒度が異なるた
め、切断端面の面状態が異なり、また半導体ウエ
ハと絶縁体２８との接着界面端部にエツチング面
３６がでる。更に残り部分４２が残る特徴があ
る。 FIG. 3 shows a semiconductor pressure sensor made by the above cutting method. Compared to the conventional method, the grain size of the blade differs depending on the cut portion, so the surface condition of the cut end surface differs, and an etched surface 36 appears at the end of the adhesive interface between the semiconductor wafer and the insulator 28. Furthermore, there is a feature that a remaining portion 42 remains.
本実施例によれば、半導体ウエハ部分と絶縁体
２８とをそれぞれ専用のブレードを使用して切断
するため、半導体ストレンゲージチツプ３０表面
に生じるチツピングを20μｍ以内に抑える効果が
ある。また残り部分４２を残して切断するので切
断くずの洗浄時等の取扱いが便利となる効果があ
る。 According to this embodiment, since the semiconductor wafer portion and the insulator 28 are cut using dedicated blades, it is effective to suppress chipping occurring on the surface of the semiconductor strain gauge chip 30 to within 20 μm. Further, since the remaining portion 42 is cut while leaving it, handling of cutting waste when cleaning etc. becomes convenient.
第４図は本発明に係る半導体圧力センサ切断方
法を説明する他の実施例を示すものである。但
し、第２図と同様あるいは同一構成部分は同一符
号を用いて示してある。 FIG. 4 shows another embodiment for explaining the semiconductor pressure sensor cutting method according to the present invention. However, the same components as those in FIG. 2 are indicated using the same reference numerals.
絶縁体２８の上面に半導体ウエハ状態の半導体
ストレンゲージチツプ３０が接着されている。こ
の半導体ストレンゲージチツプ３０にはダイヤフ
ラム３２が形成されている。先きの実施例と異な
るところは、半導体部切断溝下のエツチングによ
る空間（第２図の符号３６の部分）を設けず、半
導体部分を残した残り部分４４を設けることにあ
る。他の構成は先きの実施例と同様で符号３８及
び４０はブレードの切断跡である。 A semiconductor strain gauge chip 30 in the form of a semiconductor wafer is bonded to the upper surface of the insulator 28. A diaphragm 32 is formed in this semiconductor strain gauge chip 30. The difference from the previous embodiment is that a space (a portion 36 in FIG. 2) formed by etching under the cutting groove of the semiconductor portion is not provided, but a remaining portion 44 in which the semiconductor portion remains is provided. The rest of the structure is the same as in the previous embodiment, and numerals 38 and 40 indicate cutting marks of the blade.
先ず半導体専用のブレードで半導体ウエハの符
号３８の部分を切断して残り部分４４を残して切
断を終了する。次に絶縁体専用ブレードを用いて
符号４０の部分を切断して残り部分４４を残す。 First, a portion 38 of the semiconductor wafer is cut using a blade exclusively for semiconductors, and the cutting is completed leaving the remaining portion 44. Next, a section 40 is cut using a blade dedicated to insulators, leaving a remaining section 44.
第５図は上記の切断方法により得られた半導体
圧力センサを示しており、残り部分４４が出る特
徴がある。 FIG. 5 shows a semiconductor pressure sensor obtained by the above-described cutting method, and is characterized by a remaining portion 44.
本実施例によれば、半導体残り部分４４にはチ
ツピングが全面に出るが符号３８の半導体切断溝
で半導体ストレンゲージチツプ３０の部分に対す
るチツピングは抑制され、先きの実施例と同様の
効果がある。 According to this embodiment, although chipping appears on the entire surface of the remaining semiconductor portion 44, chipping of the semiconductor strain gauge chip 30 is suppressed by the semiconductor cutting groove 38, and the same effect as in the previous embodiment is obtained. .
なお、半導体切断溝を絶縁体部まで伸ばすこと
も可能である。しかしこの方法では半導体加工ブ
レードの目詰りが生じブレードの消耗が激しくな
る欠点がある。 Note that it is also possible to extend the semiconductor cutting groove to the insulator portion. However, this method has the drawback that the semiconductor processing blade becomes clogged and the blade is subject to severe wear.
以上の説明から明らかなように本発明によれ
ば、半導体部と絶縁体部とをそれぞれ専用のブレ
ードで切断することにより、切断時に半導体に発
生するチツピングが極めて少ない半導体圧力セン
サ切断方法を提供することができる。 As is clear from the above description, the present invention provides a semiconductor pressure sensor cutting method in which the semiconductor portion and the insulator portion are each cut with dedicated blades, thereby minimizing chipping that occurs in the semiconductor during cutting. be able to.
第１図は従来の半導体圧力センサを示す斜視
図、第２図は本発明に係る半導体圧力センサ切断
方法の一実施例を示す説明図、第３図は第２図に
示した切断方法によつて作られた半導体圧力セン
サの斜視図、第４図は本発明に係る半導体圧力セ
ンサ切断方法の他の実施例を示す説明図、第５図
は第４図に示した切断方法によつて作られた半導
体圧力センサの斜視図である。
２８……絶縁体、３０……半導体ストレンゲー
ジチツプ、３６……空間、４４……残り部分。
FIG. 1 is a perspective view showing a conventional semiconductor pressure sensor, FIG. 2 is an explanatory diagram showing an embodiment of the semiconductor pressure sensor cutting method according to the present invention, and FIG. 3 is a perspective view showing a conventional semiconductor pressure sensor. FIG. 4 is an explanatory diagram showing another embodiment of the semiconductor pressure sensor cutting method according to the present invention, and FIG. 5 is a perspective view of a semiconductor pressure sensor manufactured by the cutting method shown in FIG. FIG. 2 is a perspective view of a semiconductor pressure sensor. 28...Insulator, 30...Semiconductor strain gauge chip, 36...Space, 44...Remaining portion.
Claims (1)
ムとが形成され、該半導体ウエハが絶縁体に接着
固定されたものを一体のまま切断する半導体圧力
センサ切断方法において、前記半導体ウエハ部と
前記絶縁部とをそれぞれ異なつたブレードを用い
て切断することを特徴とする半導体圧力センサ切
断方法。 ２ 特許請求の範囲第１項記載の半導体圧力セン
サ切断方法において、半導体ウエハ切断部の半導
体ウエハ内部に空間を設け、該空間が絶縁体表面
に接するようにすることを特徴とする半導体圧力
センサ切断方法。 ３ 特許請求の範囲第１項記載の半導体圧力セン
サ切断方法において、半導体ウエハ部の切断に際
して、半導体ウエハの一部を残すことを特徴とす
る半導体圧力センサ切断方法。[Scope of Claims] 1. A semiconductor pressure sensor cutting method in which a plurality of resistors and diaphragms are formed on a semiconductor wafer, and the semiconductor wafer is adhesively fixed to an insulator and is cut as one piece, wherein the semiconductor wafer is A method for cutting a semiconductor pressure sensor, the method comprising cutting the insulating part and the insulating part using different blades. 2. The method for cutting a semiconductor pressure sensor according to claim 1, wherein a space is provided inside the semiconductor wafer in the semiconductor wafer cutting section, and the space is in contact with the surface of the insulator. Method. 3. A semiconductor pressure sensor cutting method according to claim 1, characterized in that a portion of the semiconductor wafer is left when cutting the semiconductor wafer portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9271680A JPS5718370A (en) | 1980-07-09 | 1980-07-09 | Cutting method for semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9271680A JPS5718370A (en) | 1980-07-09 | 1980-07-09 | Cutting method for semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5718370A JPS5718370A (en) | 1982-01-30 |
| JPS6336154B2 true JPS6336154B2 (en) | 1988-07-19 |
Family
ID=14062173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9271680A Granted JPS5718370A (en) | 1980-07-09 | 1980-07-09 | Cutting method for semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5718370A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007069456A1 (en) * | 2005-12-16 | 2007-06-21 | Olympus Corporation | Semiconductor device manufacturing method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60207386A (en) * | 1984-03-31 | 1985-10-18 | Toyota Central Res & Dev Lab Inc | Cutting method of semiconductor pressure sensor wafer |
| JPH02306669A (en) * | 1989-05-20 | 1990-12-20 | Sanyo Electric Co Ltd | Separation of semiconductor pressure sensor element |
| JP5436906B2 (en) * | 2009-03-26 | 2014-03-05 | ラピスセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062015A (en) * | 1973-10-01 | 1975-05-27 | ||
| JPS5384280A (en) * | 1976-12-29 | 1978-07-25 | Daiichi Seitoshiyo Kk | Cutting method and cutting device |
-
1980
- 1980-07-09 JP JP9271680A patent/JPS5718370A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062015A (en) * | 1973-10-01 | 1975-05-27 | ||
| JPS5384280A (en) * | 1976-12-29 | 1978-07-25 | Daiichi Seitoshiyo Kk | Cutting method and cutting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007069456A1 (en) * | 2005-12-16 | 2007-06-21 | Olympus Corporation | Semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5718370A (en) | 1982-01-30 |
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