JPS5521106A - Method of forming ohmic electrode - Google Patents

Method of forming ohmic electrode

Info

Publication number
JPS5521106A
JPS5521106A JP9349078A JP9349078A JPS5521106A JP S5521106 A JPS5521106 A JP S5521106A JP 9349078 A JP9349078 A JP 9349078A JP 9349078 A JP9349078 A JP 9349078A JP S5521106 A JPS5521106 A JP S5521106A
Authority
JP
Japan
Prior art keywords
layer
solder
wafer
ohmic electrode
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9349078A
Other languages
Japanese (ja)
Inventor
Shuzo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP9349078A priority Critical patent/JPS5521106A/en
Publication of JPS5521106A publication Critical patent/JPS5521106A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To make easy and certain fixing of an element to an attachement body without generating an oxidized film with a solder layer of a uniform thickness by forming an ohmic electrode by evaporating a solder to a semiconductor wafer.
CONSTITUTION: One of Cr, Au, and Al soluble in Si is evaporated on the rough surface 10a of an Si wafer 10 to form a first metallic layer 111, Ni wettable with solder is thereon to form a second metallic layer 112 used for a base metallic layer 11. Successively, a solder layer 12 of Pb-Sn, or Pb-Ag-Sn and others is evaporated. In this case, because of generation of various vapor pressure, an Sn(-Ag) layer 122 is formed on a Pb layer 121. An oxidization preventing layer 13 of Au or AG is formed thereon. According to such a process, the wafer is divided into various elements thereafter, it can be mounted easily and certainly on the element attachment body without causing any inclination.
COPYRIGHT: (C)1980,JPO&Japio
JP9349078A 1978-07-31 1978-07-31 Method of forming ohmic electrode Pending JPS5521106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9349078A JPS5521106A (en) 1978-07-31 1978-07-31 Method of forming ohmic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9349078A JPS5521106A (en) 1978-07-31 1978-07-31 Method of forming ohmic electrode

Publications (1)

Publication Number Publication Date
JPS5521106A true JPS5521106A (en) 1980-02-15

Family

ID=14083775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9349078A Pending JPS5521106A (en) 1978-07-31 1978-07-31 Method of forming ohmic electrode

Country Status (1)

Country Link
JP (1) JPS5521106A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778144A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device
JPS59193036A (en) * 1983-04-16 1984-11-01 Toshiba Corp Semiconductor device
JPS63142640A (en) * 1986-12-05 1988-06-15 Sumitomo Electric Ind Ltd Manufacture of semiconductor device
JP2015026857A (en) * 2009-09-11 2015-02-05 ローム株式会社 Semiconductor device and production method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778144A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device
JPS59193036A (en) * 1983-04-16 1984-11-01 Toshiba Corp Semiconductor device
JPH0226376B2 (en) * 1983-04-16 1990-06-08 Tokyo Shibaura Electric Co
JPS63142640A (en) * 1986-12-05 1988-06-15 Sumitomo Electric Ind Ltd Manufacture of semiconductor device
JP2015026857A (en) * 2009-09-11 2015-02-05 ローム株式会社 Semiconductor device and production method therefor
US9543239B2 (en) 2009-09-11 2017-01-10 Rohm Co., Ltd. Semiconductor device and production method therefor
US9837373B2 (en) 2009-09-11 2017-12-05 Rohm Co., Ltd. Semiconductor device and production method therefor

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