JPS5518673A - Ionized radiation sensitive negative type resist - Google Patents

Ionized radiation sensitive negative type resist

Info

Publication number
JPS5518673A
JPS5518673A JP9237578A JP9237578A JPS5518673A JP S5518673 A JPS5518673 A JP S5518673A JP 9237578 A JP9237578 A JP 9237578A JP 9237578 A JP9237578 A JP 9237578A JP S5518673 A JPS5518673 A JP S5518673A
Authority
JP
Japan
Prior art keywords
alkyl
ionized radiation
irradiated
chlorine
negative type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9237578A
Other languages
Japanese (ja)
Inventor
Hirohisa Kato
Hideo Saeki
Tsukasa Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9237578A priority Critical patent/JPS5518673A/en
Publication of JPS5518673A publication Critical patent/JPS5518673A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form an ionized radiation sensitive negative type resist having high sensitivity, high resistance to dry etching, and high resolution, and low molecular weight, by using a polymer consisting mainly of an acrylate derivative monomer containing chlorine or sulfur. CONSTITUTION:A 10 weight % solution of a polymer or copolymer of alpha- monochloromethyl-thioleglycidyl acrylate of formulaIin which R is H, alkyl, chlorinated alkyl, or chlorine, R' is S or O, and when R is H or alkyl, R' is S; and R'' is S or O, is coated and dried on the substrate of a silicon wafer to form a resist film. The dried film is irradiated by electron beams or the like to form a latent pattern and this is developed. Chlorine or sulfur contained in the molecules permits crosslinking performance due to ionized radiation to be improved, the solubility difference between the irradiated and unirradiated areas to be enlarged, the resist film in the irradiated area after development not to meander, and little scum to be caused. Accordingly, sensitivity, resolution, and dry etching resistance can be enhanced.
JP9237578A 1978-07-28 1978-07-28 Ionized radiation sensitive negative type resist Pending JPS5518673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9237578A JPS5518673A (en) 1978-07-28 1978-07-28 Ionized radiation sensitive negative type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9237578A JPS5518673A (en) 1978-07-28 1978-07-28 Ionized radiation sensitive negative type resist

Publications (1)

Publication Number Publication Date
JPS5518673A true JPS5518673A (en) 1980-02-08

Family

ID=14052670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9237578A Pending JPS5518673A (en) 1978-07-28 1978-07-28 Ionized radiation sensitive negative type resist

Country Status (1)

Country Link
JP (1) JPS5518673A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162156A (en) * 1983-03-07 1984-09-13 有限会社ビツクスト−ン Method of preventing paint layer break-away and crack by setting surface double layer pattern with cementitious spraymaterial
JPS61221301A (en) * 1985-03-27 1986-10-01 Munekata Kk Composition for metallic green compact
JPS63194051A (en) * 1987-02-05 1988-08-11 ニチアス株式会社 Refractory coating construction method of reinforcing bar
JPS6453313U (en) * 1987-09-28 1989-04-03
JPH0762245A (en) * 1993-08-30 1995-03-07 Ito Sangyo:Kk Inorganic reactive type coating material and method for finishing of natural stone tone
WO2001074916A1 (en) * 2000-04-04 2001-10-11 Daikin Industries, Ltd. Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same
JP2010538155A (en) * 2008-08-18 2010-12-09 アイユーシーエフ−エイチワイユー（インダストリー−ユニバーシティ コーオペレーション ファウンデーション ハンヤン ユニバーシティ） Copolymer for resist containing photoacid generator and method for producing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162156A (en) * 1983-03-07 1984-09-13 有限会社ビツクスト−ン Method of preventing paint layer break-away and crack by setting surface double layer pattern with cementitious spraymaterial
JPS61221301A (en) * 1985-03-27 1986-10-01 Munekata Kk Composition for metallic green compact
JPS63194051A (en) * 1987-02-05 1988-08-11 ニチアス株式会社 Refractory coating construction method of reinforcing bar
JPH0437215B2 (en) * 1987-02-05 1992-06-18 Nichias Corp
JPS6453313U (en) * 1987-09-28 1989-04-03
JPH0762245A (en) * 1993-08-30 1995-03-07 Ito Sangyo:Kk Inorganic reactive type coating material and method for finishing of natural stone tone
WO2001074916A1 (en) * 2000-04-04 2001-10-11 Daikin Industries, Ltd. Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same
US6908724B2 (en) 2000-04-04 2005-06-21 Daikin Industries, Ltd. Fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same
JP2010538155A (en) * 2008-08-18 2010-12-09 アイユーシーエフ−エイチワイユー（インダストリー−ユニバーシティ コーオペレーション ファウンデーション ハンヤン ユニバーシティ） Copolymer for resist containing photoacid generator and method for producing the same

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