JPS54145127A - Pattern formation material - Google Patents
Pattern formation materialInfo
- Publication number
- JPS54145127A JPS54145127A JP5267578A JP5267578A JPS54145127A JP S54145127 A JPS54145127 A JP S54145127A JP 5267578 A JP5267578 A JP 5267578A JP 5267578 A JP5267578 A JP 5267578A JP S54145127 A JPS54145127 A JP S54145127A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- copolymer
- pattern formation
- formation material
- irraiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE: To endow a positive type resist material for ionized radiation lithography with improved performances, almost free of any problems in practical uses, in sensitivity, resolution, and close adhesivity with a substrate, by using a specified copolymer for this material.
CONSTITUTION: A copolymer of methyl methacrylate and 2,2,3,4,4,4-hexafluorobutyl methacrylate, preferably in an amount of 20W80 mole % is dissolved in a proper solvent. This resist solution is coated on a substrate, baked in a nitrogen gas stream, and then, irraiated with electron beams. Subsequently, this is developed with a developing solution, such as a solvent mixture of ethyl cellosolve and isopropyl alcohol.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5267578A JPS54145127A (en) | 1978-05-04 | 1978-05-04 | Pattern formation material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5267578A JPS54145127A (en) | 1978-05-04 | 1978-05-04 | Pattern formation material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54145127A true JPS54145127A (en) | 1979-11-13 |
Family
ID=12921444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5267578A Pending JPS54145127A (en) | 1978-05-04 | 1978-05-04 | Pattern formation material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54145127A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789753A (en) * | 1980-10-11 | 1982-06-04 | Daikin Ind Ltd | Formation of fluoroalkyl acrylate polymer film on substrate |
JPS585735A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
JPS585734A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
WO1989003402A1 (en) * | 1987-10-07 | 1989-04-20 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
JPH02262152A (en) * | 1989-03-31 | 1990-10-24 | Terumo Corp | Photoresist material |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
JPS5466829A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Pattern formation materil |
-
1978
- 1978-05-04 JP JP5267578A patent/JPS54145127A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
JPS5466829A (en) * | 1977-11-07 | 1979-05-29 | Fujitsu Ltd | Pattern formation materil |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789753A (en) * | 1980-10-11 | 1982-06-04 | Daikin Ind Ltd | Formation of fluoroalkyl acrylate polymer film on substrate |
JPS585735A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
JPS585734A (en) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | Manufacture of patterned resist film on substrate |
JPH0222371B2 (en) * | 1981-06-01 | 1990-05-18 | Daikin Ind Ltd | |
JPH0222370B2 (en) * | 1981-06-01 | 1990-05-18 | Daikin Ind Ltd | |
WO1989003402A1 (en) * | 1987-10-07 | 1989-04-20 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
US5157091A (en) * | 1987-10-07 | 1992-10-20 | Murahara Masataka | Ultraviolet-absorbing polymer material and photoetching process |
JPH02262152A (en) * | 1989-03-31 | 1990-10-24 | Terumo Corp | Photoresist material |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5280022A (en) | Light solubilizable composition | |
JPS5290269A (en) | Forming method for fine resist patterns | |
GB1514109A (en) | Method of making resist mask on a substrate | |
JPS5466829A (en) | Pattern formation materil | |
JPS54145127A (en) | Pattern formation material | |
JPS54145126A (en) | Pattern formation material | |
JPS54145125A (en) | Pattern formation material | |
JPS5568630A (en) | Pattern formation | |
DE3751453D1 (en) | Gas phase-applied photoresists made from anionically polymerizable monomers. | |
KR910001464A (en) | Photoresist formed by polymerization of di-unsaturated monomer | |
JPS5515149A (en) | Forming method of resist for microfabrication | |
JPS5518673A (en) | Ionized radiation sensitive negative type resist | |
TW374202B (en) | Method for forming an etch-resistant film pattern | |
JPS51148367A (en) | Layer construction radiant ray resist | |
JPS52149978A (en) | Developing treatment method of photoresist film | |
JPS5324782A (en) | Forming method of high molecular film patterns by negative resist | |
JPS57202535A (en) | Formation of negative resist pattern | |
JPS52113163A (en) | Method of developing electronic beam resist by means of gas plasma | |
JPS5674245A (en) | Pattern forming method | |
JPS5211868A (en) | Photoresist coating method | |
JPS52117077A (en) | Electron beam-exposing method | |
JPS558013A (en) | Semiconductor device manufacturing method | |
JPS55134845A (en) | Electron beam resist | |
JPS5254377A (en) | Electron beam exposure method | |
JPS5354974A (en) | Electron beam exposure system |