JPS54145127A - Pattern formation material - Google Patents

Pattern formation material

Info

Publication number
JPS54145127A
JPS54145127A JP5267578A JP5267578A JPS54145127A JP S54145127 A JPS54145127 A JP S54145127A JP 5267578 A JP5267578 A JP 5267578A JP 5267578 A JP5267578 A JP 5267578A JP S54145127 A JPS54145127 A JP S54145127A
Authority
JP
Japan
Prior art keywords
substrate
copolymer
pattern formation
formation material
irraiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5267578A
Other languages
Japanese (ja)
Inventor
Masami Kakuchi
Shungo Sugawara
Yasuhiro Yoneda
Tateo Kitamura
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5267578A priority Critical patent/JPS54145127A/en
Publication of JPS54145127A publication Critical patent/JPS54145127A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To endow a positive type resist material for ionized radiation lithography with improved performances, almost free of any problems in practical uses, in sensitivity, resolution, and close adhesivity with a substrate, by using a specified copolymer for this material.
CONSTITUTION: A copolymer of methyl methacrylate and 2,2,3,4,4,4-hexafluorobutyl methacrylate, preferably in an amount of 20W80 mole % is dissolved in a proper solvent. This resist solution is coated on a substrate, baked in a nitrogen gas stream, and then, irraiated with electron beams. Subsequently, this is developed with a developing solution, such as a solvent mixture of ethyl cellosolve and isopropyl alcohol.
COPYRIGHT: (C)1979,JPO&Japio
JP5267578A 1978-05-04 1978-05-04 Pattern formation material Pending JPS54145127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5267578A JPS54145127A (en) 1978-05-04 1978-05-04 Pattern formation material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5267578A JPS54145127A (en) 1978-05-04 1978-05-04 Pattern formation material

Publications (1)

Publication Number Publication Date
JPS54145127A true JPS54145127A (en) 1979-11-13

Family

ID=12921444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5267578A Pending JPS54145127A (en) 1978-05-04 1978-05-04 Pattern formation material

Country Status (1)

Country Link
JP (1) JPS54145127A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789753A (en) * 1980-10-11 1982-06-04 Daikin Ind Ltd Formation of fluoroalkyl acrylate polymer film on substrate
JPS585735A (en) * 1981-06-01 1983-01-13 Daikin Ind Ltd Manufacture of patterned resist film on substrate
JPS585734A (en) * 1981-06-01 1983-01-13 Daikin Ind Ltd Manufacture of patterned resist film on substrate
WO1989003402A1 (en) * 1987-10-07 1989-04-20 Terumo Kabushiki Kaisha Ultraviolet-absorbing polymer material and photoetching process
JPH02262152A (en) * 1989-03-31 1990-10-24 Terumo Corp Photoresist material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
JPS5466829A (en) * 1977-11-07 1979-05-29 Fujitsu Ltd Pattern formation materil

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789753A (en) * 1980-10-11 1982-06-04 Daikin Ind Ltd Formation of fluoroalkyl acrylate polymer film on substrate
JPS585735A (en) * 1981-06-01 1983-01-13 Daikin Ind Ltd Manufacture of patterned resist film on substrate
JPS585734A (en) * 1981-06-01 1983-01-13 Daikin Ind Ltd Manufacture of patterned resist film on substrate
JPH0222371B2 (en) * 1981-06-01 1990-05-18 Daikin Ind Ltd
JPH0222370B2 (en) * 1981-06-01 1990-05-18 Daikin Ind Ltd
WO1989003402A1 (en) * 1987-10-07 1989-04-20 Terumo Kabushiki Kaisha Ultraviolet-absorbing polymer material and photoetching process
US5157091A (en) * 1987-10-07 1992-10-20 Murahara Masataka Ultraviolet-absorbing polymer material and photoetching process
JPH02262152A (en) * 1989-03-31 1990-10-24 Terumo Corp Photoresist material

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