JPS5516444A - Producing method of semiconductor thin film resistance - Google Patents

Producing method of semiconductor thin film resistance

Info

Publication number
JPS5516444A
JPS5516444A JP8944778A JP8944778A JPS5516444A JP S5516444 A JPS5516444 A JP S5516444A JP 8944778 A JP8944778 A JP 8944778A JP 8944778 A JP8944778 A JP 8944778A JP S5516444 A JPS5516444 A JP S5516444A
Authority
JP
Japan
Prior art keywords
film
resistance
semiconductor thin
thin film
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8944778A
Other languages
Japanese (ja)
Inventor
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8944778A priority Critical patent/JPS5516444A/en
Publication of JPS5516444A publication Critical patent/JPS5516444A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain product with stable resistance value by performing anneal treatment after the formation of protection film covering a semiconductor thin film resistance.
CONSTITUTION: Anneal treatment is performed after the formation of a protection film 8 covering a semiconductor thin film resistance 3. For example, during the production process of MOSLSI, a polycrystalline Si film resistance 3 is formed, by CVD method, on a field oxidated film 2 formed on an Si base plate 1 by thermal oxidation method, to form a pair of contact-diffusion areas 4a, 4b by placing a mask of SiO2 film 5. Next, a layer insulation film 6 made of phosphorus glass, etc., and an Al wiring layer 7 are formed; and, after a protection film 8, made of phosphorus glass by CVD method or silicon nitride, etc., by plasma vapor phase reaction method, is formed, heat treatment is done under a certain condition such as in hydrogen atmosphere, 400°C, for 120 minutes, etc. Under above processes, the selection of kinds of protection films and heat treatment conditions produces a thin layer resistance with stable and desired resistance value.
COPYRIGHT: (C)1980,JPO&Japio
JP8944778A 1978-07-24 1978-07-24 Producing method of semiconductor thin film resistance Pending JPS5516444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8944778A JPS5516444A (en) 1978-07-24 1978-07-24 Producing method of semiconductor thin film resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8944778A JPS5516444A (en) 1978-07-24 1978-07-24 Producing method of semiconductor thin film resistance

Publications (1)

Publication Number Publication Date
JPS5516444A true JPS5516444A (en) 1980-02-05

Family

ID=13970927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8944778A Pending JPS5516444A (en) 1978-07-24 1978-07-24 Producing method of semiconductor thin film resistance

Country Status (1)

Country Link
JP (1) JPS5516444A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116160A (en) * 1983-11-29 1985-06-22 Sony Corp Manufacture of semiconductor device
US10065308B2 (en) 2014-12-19 2018-09-04 Kurion, Inc. Systems and methods for chain joint cable routing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134782A (en) * 1974-04-15 1975-10-25
JPS5240082A (en) * 1975-09-25 1977-03-28 Nec Corp Resistor element and process for production of same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134782A (en) * 1974-04-15 1975-10-25
JPS5240082A (en) * 1975-09-25 1977-03-28 Nec Corp Resistor element and process for production of same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116160A (en) * 1983-11-29 1985-06-22 Sony Corp Manufacture of semiconductor device
US10065308B2 (en) 2014-12-19 2018-09-04 Kurion, Inc. Systems and methods for chain joint cable routing
US11969888B2 (en) 2014-12-19 2024-04-30 Veolia Nuclear Solutions, Inc. Systems and methods for chain joint cable routing

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