JPS57167623A - Semicondutor device and manufacture thereof - Google Patents

Semicondutor device and manufacture thereof

Info

Publication number
JPS57167623A
JPS57167623A JP5397681A JP5397681A JPS57167623A JP S57167623 A JPS57167623 A JP S57167623A JP 5397681 A JP5397681 A JP 5397681A JP 5397681 A JP5397681 A JP 5397681A JP S57167623 A JPS57167623 A JP S57167623A
Authority
JP
Japan
Prior art keywords
silicon
silicon layer
polycrystal
substrate
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5397681A
Other languages
Japanese (ja)
Inventor
Shigeo Nagao
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5397681A priority Critical patent/JPS57167623A/en
Publication of JPS57167623A publication Critical patent/JPS57167623A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To obtain an itegrated circuit of high performance and low cost by forming an insulation film, a polycrystal silicon layer and a single crystal silicon layer piled one after another on a silicon semiconductor substrate. CONSTITUTION:An insulating silicon oxide film 2 is formed on the main surface of a silicon substrate 1 by thermal oxidization method. Then a polycrystal silicon layer 3 is formed on the sinsulating silicon oxide film 2 by chemical vapor phase growth method. Then, using silicon vapor phase epitaxial growth technique, the substrate is put in the hydrogen atmosphere in a reaction vessel which is heated to high temperature, for instance 950 deg.C-1,200 deg.C, and silicon source material such as SiH4 or SiH2C/2 is introduced and a single crystal silicon layer 4 is formed on the polycrystal silicon layer 3 by the heat distribution of such silicon source gas and by hydrogen reduction.
JP5397681A 1981-04-08 1981-04-08 Semicondutor device and manufacture thereof Pending JPS57167623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5397681A JPS57167623A (en) 1981-04-08 1981-04-08 Semicondutor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5397681A JPS57167623A (en) 1981-04-08 1981-04-08 Semicondutor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57167623A true JPS57167623A (en) 1982-10-15

Family

ID=12957668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5397681A Pending JPS57167623A (en) 1981-04-08 1981-04-08 Semicondutor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57167623A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234668A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing process of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234668A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing process of semiconductor

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