JPS55153374A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55153374A JPS55153374A JP6112379A JP6112379A JPS55153374A JP S55153374 A JPS55153374 A JP S55153374A JP 6112379 A JP6112379 A JP 6112379A JP 6112379 A JP6112379 A JP 6112379A JP S55153374 A JPS55153374 A JP S55153374A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- type
- electrode
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Abstract
PURPOSE:To accomplish higher dielectric strength by partially making up a gate electrode by a double-layer polycrystaline semiconductor with an enhancement section and a depletion section provided on the IMOS transistor. CONSTITUTION:An n<+>-type drain region 18 is formed between the field oxide region of a p-type Si substrate 10 and the upper layer gate electrode 15a while an n<+>-type source 19 is formed between the field oxide region and the lower layer gate electrode 13a. It is so arranged that the region A covered with the electrode 15a through an oxide film 14 acts as a depletion type channel while the region B covered with the electrode 13a through the oxide film does as a enhancement type channel. The gate electrodes 13a and 15a are connected to each other at the contact section of the film 14. Given the same signal, the two gate electrodes work electrically as the single gate electrode. With such an arrangement, the concentration of the impurities in the region A can be adjusted easily thereby permitting the production of a MOS transistor with a high voltage between the source and the drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6112379A JPS55153374A (en) | 1979-05-17 | 1979-05-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6112379A JPS55153374A (en) | 1979-05-17 | 1979-05-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55153374A true JPS55153374A (en) | 1980-11-29 |
Family
ID=13161977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6112379A Pending JPS55153374A (en) | 1979-05-17 | 1979-05-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55153374A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62115777A (en) * | 1985-08-02 | 1987-05-27 | ウエハスケ−ル インテグレ−シヨン，インコ−ポレイテツド | Self-aligning type devided gate ep-rom |
-
1979
- 1979-05-17 JP JP6112379A patent/JPS55153374A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62115777A (en) * | 1985-08-02 | 1987-05-27 | ウエハスケ−ル インテグレ−シヨン，インコ−ポレイテツド | Self-aligning type devided gate ep-rom |
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