JPS5630777A - Manufacture of light emitting diode chip - Google Patents
Manufacture of light emitting diode chipInfo
- Publication number
- JPS5630777A JPS5630777A JP10625579A JP10625579A JPS5630777A JP S5630777 A JPS5630777 A JP S5630777A JP 10625579 A JP10625579 A JP 10625579A JP 10625579 A JP10625579 A JP 10625579A JP S5630777 A JPS5630777 A JP S5630777A
- Authority
- JP
- Japan
- Prior art keywords
- cutting line
- film
- light emitting
- junction
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To eliminate the isolation between an insulating film and an electrode plate in a light emitting diode chip by separating by cutting a wafer formed with P- N junctions to form respective light emitting diodes by removing beforehand insulating film and electrode plate along cutting line and then dicing it. CONSTITUTION:A P-N junction is formed with a P type layer 1 and an N type layer 2, only the central portion is ratained, and the peripheral portion is mesa etched to form a cutting line 4. An SiO insulatng film 3 is coated over from the surface of the P-N junction to the side surface of the mesa portion, and the vicinity of the cutting line 4 and the surface of the P-N junction are removed on the surface in a circular shape. Thereafter, a P type electrode 5 is coated on the film 3, an optical fiber mounting portion 7 is similarly removed in circular shape,and an N type electrode 6 is coated on the entire back surface of the layer 2. Thereafter, it is diced or scribed along the cutting line 4. The film 3 and the electrode 5 can not be perforated in said manner, and the yield of fabricating the diode can be consequently improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10625579A JPS5630777A (en) | 1979-08-21 | 1979-08-21 | Manufacture of light emitting diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10625579A JPS5630777A (en) | 1979-08-21 | 1979-08-21 | Manufacture of light emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5630777A true JPS5630777A (en) | 1981-03-27 |
Family
ID=14428985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10625579A Pending JPS5630777A (en) | 1979-08-21 | 1979-08-21 | Manufacture of light emitting diode chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5630777A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175572A (en) * | 1984-09-20 | 1986-04-17 | Sanyo Electric Co Ltd | Compound semiconductor |
| JPS6344461U (en) * | 1986-09-05 | 1988-03-25 | ||
| US5482887A (en) * | 1992-12-23 | 1996-01-09 | U.S. Philips Corporation | Method of manufacturing a semiconductor device with a passivated side |
| JP2002246679A (en) * | 2001-02-14 | 2002-08-30 | Sony Corp | Semiconductor laser element and manufacturing method therefor |
| JP2004200210A (en) * | 2002-12-16 | 2004-07-15 | Fuji Xerox Co Ltd | Surface emitting type semiconductor laser and its manufacturing method |
-
1979
- 1979-08-21 JP JP10625579A patent/JPS5630777A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175572A (en) * | 1984-09-20 | 1986-04-17 | Sanyo Electric Co Ltd | Compound semiconductor |
| JPS6344461U (en) * | 1986-09-05 | 1988-03-25 | ||
| US5482887A (en) * | 1992-12-23 | 1996-01-09 | U.S. Philips Corporation | Method of manufacturing a semiconductor device with a passivated side |
| JP2002246679A (en) * | 2001-02-14 | 2002-08-30 | Sony Corp | Semiconductor laser element and manufacturing method therefor |
| JP2004200210A (en) * | 2002-12-16 | 2004-07-15 | Fuji Xerox Co Ltd | Surface emitting type semiconductor laser and its manufacturing method |
| JP4507489B2 (en) * | 2002-12-16 | 2010-07-21 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser and manufacturing method thereof |
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