JPS55148431A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55148431A
JPS55148431A JP5565979A JP5565979A JPS55148431A JP S55148431 A JPS55148431 A JP S55148431A JP 5565979 A JP5565979 A JP 5565979A JP 5565979 A JP5565979 A JP 5565979A JP S55148431 A JPS55148431 A JP S55148431A
Authority
JP
Japan
Prior art keywords
laser
annealing
sample
semiconductor device
beam source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5565979A
Other languages
Japanese (ja)
Inventor
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5565979A priority Critical patent/JPS55148431A/en
Publication of JPS55148431A publication Critical patent/JPS55148431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To enable performance of a laser annealing of an optimum wavelength suitable to the substance at each part of a semiconductor device and to enable handling with a low gradient of thermal efficiency in their respective parts by irradiating a plural number of laser beams with different oscillation frequencies with each other. CONSTITUTION:A laser beam source 1 is an Nb added YAG laser, and the other laser beam source 2 is a CO2 laser. The two laser beams emitted from the above beam sources respectively are composed in one optical beam by a total reflection mirror 6 arranged so as to have them in one beam, and then it is incidented upon a semiconductor element 5, a sample element. A sample 5 is placed on an X-Y table. In case an expander is used, it is placed in fixed condition. As above-mentioned, an optimum heat treatment can be performed for each section of the element by executing an annealing. Also a sufficient melting of a phosphor added silicon dioxide film is selectively performed.
JP5565979A 1979-05-09 1979-05-09 Manufacture of semiconductor device Pending JPS55148431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5565979A JPS55148431A (en) 1979-05-09 1979-05-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5565979A JPS55148431A (en) 1979-05-09 1979-05-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55148431A true JPS55148431A (en) 1980-11-19

Family

ID=13004961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5565979A Pending JPS55148431A (en) 1979-05-09 1979-05-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55148431A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
US4466179A (en) * 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
JP2007027612A (en) * 2005-07-21 2007-02-01 Sony Corp Irradiation apparatus and irradiation method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
US4466179A (en) * 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
JP2007027612A (en) * 2005-07-21 2007-02-01 Sony Corp Irradiation apparatus and irradiation method

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