JPS57183024A - Laser annealing - Google Patents

Laser annealing

Info

Publication number
JPS57183024A
JPS57183024A JP6733581A JP6733581A JPS57183024A JP S57183024 A JPS57183024 A JP S57183024A JP 6733581 A JP6733581 A JP 6733581A JP 6733581 A JP6733581 A JP 6733581A JP S57183024 A JPS57183024 A JP S57183024A
Authority
JP
Japan
Prior art keywords
laser
beams
substrate
annealing
pulse duration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6733581A
Other languages
Japanese (ja)
Inventor
Ikuro Kobayashi
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6733581A priority Critical patent/JPS57183024A/en
Publication of JPS57183024A publication Critical patent/JPS57183024A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Abstract

PURPOSE:To enable to dissolve the problems of dependence property on wavelength, dependence property on pulse duration at the respective layers of a semiconductor substrate when laser annealing of the semiconductor substrate is to be performed by a method wherein plural kinds of optical beams are mixed and irradiaed selectively. CONSTITUTION:The laser beams radiated from the optical radiating parts LA, LB, LC, LD are the properly selected beams of the beam having different wavelength, the Q-switched laser beam or the continuous wave laser beam, the beam having different pulse duration, etc. ON.OFF of the laser beams thereof are also properly selected. The laser beams thereof are reflected by mirrors MA- MD, and are condensed at one point on the substrate S. The substrate S is transferred in the X-Y directions, and annealing is performed by scanning.
JP6733581A 1981-05-02 1981-05-02 Laser annealing Pending JPS57183024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6733581A JPS57183024A (en) 1981-05-02 1981-05-02 Laser annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6733581A JPS57183024A (en) 1981-05-02 1981-05-02 Laser annealing

Publications (1)

Publication Number Publication Date
JPS57183024A true JPS57183024A (en) 1982-11-11

Family

ID=13342038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6733581A Pending JPS57183024A (en) 1981-05-02 1981-05-02 Laser annealing

Country Status (1)

Country Link
JP (1) JPS57183024A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224121A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Laser annealing device
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
EP1432022A3 (en) * 2002-12-18 2008-01-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing and transferring a semiconductor film
EP1912252A1 (en) * 2006-10-13 2008-04-16 Samsung SDI Co., Ltd. Polysilicon thin film transistor and method of fabricating the same
KR100872808B1 (en) * 2007-08-14 2008-12-09 주식회사 실트론 Apparatus and method for irradiating laser beam
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS55148431A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148430A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS55148431A (en) * 1979-05-09 1980-11-19 Toshiba Corp Manufacture of semiconductor device
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224121A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Laser annealing device
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
EP1432022A3 (en) * 2002-12-18 2008-01-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing and transferring a semiconductor film
US8212364B2 (en) 2002-12-18 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
JP2010109375A (en) * 2004-01-22 2010-05-13 Ultratech Inc Laser thermal annealing of lightly doped silicon substrate
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
EP1912252A1 (en) * 2006-10-13 2008-04-16 Samsung SDI Co., Ltd. Polysilicon thin film transistor and method of fabricating the same
KR100872808B1 (en) * 2007-08-14 2008-12-09 주식회사 실트론 Apparatus and method for irradiating laser beam

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