JPS5514588A - Semiconductor dynamic memory unit - Google Patents

Semiconductor dynamic memory unit

Info

Publication number: JPS5514588A
Authority: JP; Japan
Prior art keywords: information; sets; line; charge; output
Prior art date: 1978-07-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP8811078A

Other languages

English (en)

Inventor

Toru Furuyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-07-19

Filing date

1978-07-19

Publication date

1980-02-01

1978-07-19 Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp

1978-07-19 Priority to JP8811078A priority Critical patent/JPS5514588A/ja

1980-02-01 Publication of JPS5514588A publication Critical patent/JPS5514588A/ja

Status Pending legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)

JP8811078A 1978-07-19 1978-07-19 Semiconductor dynamic memory unit Pending JPS5514588A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP8811078A JPS5514588A (en)	1978-07-19	1978-07-19	Semiconductor dynamic memory unit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP8811078A JPS5514588A (en)	1978-07-19	1978-07-19	Semiconductor dynamic memory unit

Publications (1)

Publication Number	Publication Date
JPS5514588A true JPS5514588A (en)	1980-02-01

Family

ID=13933733

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8811078A Pending JPS5514588A (en)	1978-07-19	1978-07-19	Semiconductor dynamic memory unit

Country Status (1)

Country	Link
JP (1)	JPS5514588A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2506057A1 (fr) *	1981-05-13	1982-11-19	Hitachi Ltd	Memoire a semi-conducteurs
EP0148488A2 (en) *	1983-12-23	1985-07-17	Hitachi, Ltd.	Semiconductor memory having multiple level storage structure
JPS62192999A (ja) *	1986-02-18	1987-08-24	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	多重レベル記憶装置のセンス回路
JPS63149900A (ja) *	1986-12-15	1988-06-22	Toshiba Corp	半導体メモリ
JP2011501340A (ja) *	2007-10-15	2011-01-06	エス．アクアセミコンダクター，エルエルシー	２つのゲート用トランジスタを有する多値メモリ記憶装置
JP2017118141A (ja) *	2010-10-20	2017-06-29	株式会社半導体エネルギー研究所	記憶装置

1978
- 1978-07-19 JP JP8811078A patent/JPS5514588A/ja active Pending

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2506057A1 (fr) *	1981-05-13	1982-11-19	Hitachi Ltd	Memoire a semi-conducteurs
EP0148488A2 (en) *	1983-12-23	1985-07-17	Hitachi, Ltd.	Semiconductor memory having multiple level storage structure
JPS62192999A (ja) *	1986-02-18	1987-08-24	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	多重レベル記憶装置のセンス回路
JPH0468718B2 (ja) *	1986-02-18	1992-11-04	Intaanashonaru Bijinesu Mashiinzu Corp
JPS63149900A (ja) *	1986-12-15	1988-06-22	Toshiba Corp	半導体メモリ
EP0273639A2 (en) *	1986-12-15	1988-07-06	Kabushiki Kaisha Toshiba	Semiconductor memory having multiple level storage structure
JPH059878B2 (ja) *	1986-12-15	1993-02-08	Tokyo Shibaura Electric Co
JP2011501340A (ja) *	2007-10-15	2011-01-06	エス．アクアセミコンダクター，エルエルシー	２つのゲート用トランジスタを有する多値メモリ記憶装置
JP2017118141A (ja) *	2010-10-20	2017-06-29	株式会社半導体エネルギー研究所	記憶装置

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