JPS55134961A - Semiconductor device and its preparation - Google Patents
Semiconductor device and its preparationInfo
- Publication number
- JPS55134961A JPS55134961A JP4331379A JP4331379A JPS55134961A JP S55134961 A JPS55134961 A JP S55134961A JP 4331379 A JP4331379 A JP 4331379A JP 4331379 A JP4331379 A JP 4331379A JP S55134961 A JPS55134961 A JP S55134961A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- groove
- layers
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To reduce the parasitic capacitance in an IC of a static induction transistor logic element (SITL) with a V-groove in a process easier than usual for improving the operation characteristic by self-aligning the p-type gate layer and the mesa layer for the drain. CONSTITUTION:On a p-type substrat having an n-type buried layer, an n-epitaxial layer is piled up, and p-type layers 51-54 are selectively formed, on which an n- epitaxial layer 32 is piled up. The layer 32 does not accumulate on oxide films 81- 84 on the p-type layer surface, and the p-type layers 51-54 diffuse slightly outward into the layer 32. The whole is covered with SiO2 film 85, which is selectively removed: it is left on mesa layers 321 and 322, and a space is left on the edge of the film 85 on the groove buttom. The whole except the mesa layers 321 and 322 is practically levelled by anisotropy etching, in order to newly form grooves 42 and 43. Then n<+> and p<+> diffusions are selectively provided, followed by wiring, and forming an injector 5, gate 50 and drain 6. A buried layer 2 is led from the groove 42 through an n<+>-layer 62 in order to form a source 60, and the groove 43 is provided with p<+> diffusion 55 for element isolation. The constitution permits fine processing to be easy, so that an SITL of small parasitic capacitance can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4331379A JPS55134961A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4331379A JPS55134961A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device and its preparation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55134961A true JPS55134961A (en) | 1980-10-21 |
Family
ID=12660305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4331379A Pending JPS55134961A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55134961A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0429251A (en) * | 1990-05-25 | 1992-01-31 | Canon Inc | Developer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5097279A (en) * | 1973-12-25 | 1975-08-02 | ||
| JPS5127780A (en) * | 1974-08-30 | 1976-03-08 | Matsushita Electric Ind Co Ltd | TATEGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHOHO |
| JPS5258483A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Junction type field effect semiconductor device and its production |
| JPS53111282A (en) * | 1977-01-12 | 1978-09-28 | Handotai Kenkyu Shinkokai | Semiconductor ic |
-
1979
- 1979-04-10 JP JP4331379A patent/JPS55134961A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5097279A (en) * | 1973-12-25 | 1975-08-02 | ||
| JPS5127780A (en) * | 1974-08-30 | 1976-03-08 | Matsushita Electric Ind Co Ltd | TATEGATADENKAIKOKATORANJISUTA OYOBI SONOSEIZOHOHO |
| JPS5258483A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Junction type field effect semiconductor device and its production |
| JPS53111282A (en) * | 1977-01-12 | 1978-09-28 | Handotai Kenkyu Shinkokai | Semiconductor ic |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0429251A (en) * | 1990-05-25 | 1992-01-31 | Canon Inc | Developer |
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