JPS55128828A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55128828A JPS55128828A JP3728779A JP3728779A JPS55128828A JP S55128828 A JPS55128828 A JP S55128828A JP 3728779 A JP3728779 A JP 3728779A JP 3728779 A JP3728779 A JP 3728779A JP S55128828 A JPS55128828 A JP S55128828A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ions
- substrate
- type
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To perform treatment at a low temperature in a short time and prevent crystal defects when using Al to produce a p-type region in an n-type Si substrate, by injecting Al ions into the substrate, then coating the surface with an Si3N4 film and driving the ions inside under an inert atmosphere.
CONSTITUTION: To produce a p-type region in an N-type Si substrate 1, a p-type injection layer 2 is provided first by injecting a prescribed does of Al ions. The entire surface is then coated with an SiO2 film 3 and an Si3N4 film 5 which is produced by a CVD method or a low-temperature plasma nitride making method. The substrate and the films coated thereon are heated to 1200°C under an atmosphere of N2 to drive the injected Al ions to activate the p-type injection layer 2. Since not only the SiO3 film 3 but also the Si3N4 film 5 are provided, no abnormal phenomenon takes place as to the Al ions and the treatment temperature can be reduced and a noise characteristic is improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3728779A JPS55128828A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3728779A JPS55128828A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128828A true JPS55128828A (en) | 1980-10-06 |
Family
ID=12493487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3728779A Pending JPS55128828A (en) | 1979-03-28 | 1979-03-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128828A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3147535A1 (en) * | 1980-12-04 | 1982-08-05 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE |
JPS62219515A (en) * | 1986-03-19 | 1987-09-26 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
JPS633459A (en) * | 1986-06-23 | 1988-01-08 | Nec Corp | Formation of diffused well |
-
1979
- 1979-03-28 JP JP3728779A patent/JPS55128828A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3147535A1 (en) * | 1980-12-04 | 1982-08-05 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE |
DE3147535C2 (en) * | 1980-12-04 | 1988-07-28 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa, Jp | |
JPS62219515A (en) * | 1986-03-19 | 1987-09-26 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
JPS633459A (en) * | 1986-06-23 | 1988-01-08 | Nec Corp | Formation of diffused well |
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