JPS55107946A - Sintered metal oxide semiconductor and gas sensor element using the same - Google Patents

Sintered metal oxide semiconductor and gas sensor element using the same

Info

Publication number
JPS55107946A
JPS55107946A JP1571379A JP1571379A JPS55107946A JP S55107946 A JPS55107946 A JP S55107946A JP 1571379 A JP1571379 A JP 1571379A JP 1571379 A JP1571379 A JP 1571379A JP S55107946 A JPS55107946 A JP S55107946A
Authority
JP
Japan
Prior art keywords
mixture
sensor element
metal oxide
oxide semiconductor
gas sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1571379A
Other languages
Japanese (ja)
Inventor
Hiroaki Yanagida
Masasuke Takada
Satoru Ishihara
Keiichi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ISHIZUKA DENSHI KK
Chichibu Cement Co Ltd
Mitsui Mining and Smelting Co Ltd
Original Assignee
ISHIZUKA DENSHI KK
Chichibu Cement Co Ltd
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ISHIZUKA DENSHI KK, Chichibu Cement Co Ltd, Mitsui Mining and Smelting Co Ltd filed Critical ISHIZUKA DENSHI KK
Priority to JP1571379A priority Critical patent/JPS55107946A/en
Publication of JPS55107946A publication Critical patent/JPS55107946A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a special gas sensor element by mixing Al2O3 and Li2O with ZnO and calcining the mixture.
CONSTITUTION: Sintered metal oxide semiconductor is obtained by the steps of adding 0.1W10mol% (preferably 0.5W3mol%) of Al2O3 and 0.1W10mol% (preferably 0.5W2mol%) of LiO2 to ZnO, sufficiently pulverizing and mixing the mixture, preliminarily calcining the mixture at approx. 500W600°C, then press molding the mixture into desired shape and calcining the mixture at approx. 700W1300°C. A sensor element formed by providing electrodes at the sintered semiconductor may sense various gases (such as, hydrogen, carbon monoxide, hydrocarbon, etc.) at the temperature from 100°C to sintering temperature (preferably to 300W500°C) and also sense steam (moisture content) at less than 400°C (preferably at room temperature).
COPYRIGHT: (C)1980,JPO&Japio
JP1571379A 1979-02-14 1979-02-14 Sintered metal oxide semiconductor and gas sensor element using the same Pending JPS55107946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1571379A JPS55107946A (en) 1979-02-14 1979-02-14 Sintered metal oxide semiconductor and gas sensor element using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1571379A JPS55107946A (en) 1979-02-14 1979-02-14 Sintered metal oxide semiconductor and gas sensor element using the same

Publications (1)

Publication Number Publication Date
JPS55107946A true JPS55107946A (en) 1980-08-19

Family

ID=11896396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1571379A Pending JPS55107946A (en) 1979-02-14 1979-02-14 Sintered metal oxide semiconductor and gas sensor element using the same

Country Status (1)

Country Link
JP (1) JPS55107946A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03293554A (en) * 1990-04-11 1991-12-25 Matsushita Electric Ind Co Ltd Temperature sensor
JP2015068802A (en) * 2013-09-30 2015-04-13 国立大学法人 岡山大学 Thin film-type hydrogen gas sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03293554A (en) * 1990-04-11 1991-12-25 Matsushita Electric Ind Co Ltd Temperature sensor
JP2015068802A (en) * 2013-09-30 2015-04-13 国立大学法人 岡山大学 Thin film-type hydrogen gas sensor

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