JPS55107946A - Sintered metal oxide semiconductor and gas sensor element using the same - Google Patents
Sintered metal oxide semiconductor and gas sensor element using the sameInfo
- Publication number
- JPS55107946A JPS55107946A JP1571379A JP1571379A JPS55107946A JP S55107946 A JPS55107946 A JP S55107946A JP 1571379 A JP1571379 A JP 1571379A JP 1571379 A JP1571379 A JP 1571379A JP S55107946 A JPS55107946 A JP S55107946A
- Authority
- JP
- Japan
- Prior art keywords
- mixture
- sensor element
- metal oxide
- oxide semiconductor
- gas sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To provide a special gas sensor element by mixing Al2O3 and Li2O with ZnO and calcining the mixture.
CONSTITUTION: Sintered metal oxide semiconductor is obtained by the steps of adding 0.1W10mol% (preferably 0.5W3mol%) of Al2O3 and 0.1W10mol% (preferably 0.5W2mol%) of LiO2 to ZnO, sufficiently pulverizing and mixing the mixture, preliminarily calcining the mixture at approx. 500W600°C, then press molding the mixture into desired shape and calcining the mixture at approx. 700W1300°C. A sensor element formed by providing electrodes at the sintered semiconductor may sense various gases (such as, hydrogen, carbon monoxide, hydrocarbon, etc.) at the temperature from 100°C to sintering temperature (preferably to 300W500°C) and also sense steam (moisture content) at less than 400°C (preferably at room temperature).
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1571379A JPS55107946A (en) | 1979-02-14 | 1979-02-14 | Sintered metal oxide semiconductor and gas sensor element using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1571379A JPS55107946A (en) | 1979-02-14 | 1979-02-14 | Sintered metal oxide semiconductor and gas sensor element using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55107946A true JPS55107946A (en) | 1980-08-19 |
Family
ID=11896396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1571379A Pending JPS55107946A (en) | 1979-02-14 | 1979-02-14 | Sintered metal oxide semiconductor and gas sensor element using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107946A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03293554A (en) * | 1990-04-11 | 1991-12-25 | Matsushita Electric Ind Co Ltd | Temperature sensor |
JP2015068802A (en) * | 2013-09-30 | 2015-04-13 | 国立大学法人 岡山大学 | Thin film-type hydrogen gas sensor |
-
1979
- 1979-02-14 JP JP1571379A patent/JPS55107946A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03293554A (en) * | 1990-04-11 | 1991-12-25 | Matsushita Electric Ind Co Ltd | Temperature sensor |
JP2015068802A (en) * | 2013-09-30 | 2015-04-13 | 国立大学法人 岡山大学 | Thin film-type hydrogen gas sensor |
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