JPS5498185A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5498185A
JPS5498185A JP492778A JP492778A JPS5498185A JP S5498185 A JPS5498185 A JP S5498185A JP 492778 A JP492778 A JP 492778A JP 492778 A JP492778 A JP 492778A JP S5498185 A JPS5498185 A JP S5498185A
Authority
JP
Japan
Prior art keywords
film
substrate
thermal oxidation
remaining
photosensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP492778A
Other languages
Japanese (ja)
Inventor
Yasuyoshi Kawase
Kenzo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP492778A priority Critical patent/JPS5498185A/en
Publication of JPS5498185A publication Critical patent/JPS5498185A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To form minute patterns with high pattern accurary in the active area by forming a silicon dioxide film for the insulator separation by means of the thermal oxidation of substrate while oxides are remaining.
CONSTITUTION: Form oxidized film 2 of silicon dioxide by thermal oxidation etc. on the main surface of the single conductive type semiconductor substrate 1, form anti-oxidation insulation film 3 on 2, remove photosensitive resin from the inactive are and etch only insulaton film 3 by CF4 type plasma by using residual photosensitive resin 5 as the mask. Then, form p+ layer 6 on substrate 1 by means of ion injection, 100...200 KeV, of single conductive type impuirity such as oron, etc. through exposed oxidized film 2. Then, while residual oxdized film 2 is remaining, form silicon diocide film 8 for insulator separation by means of the thermal oxidation of substrate. With this invention, the pattern accuracy of active area is increased and minute patterns can be formed effectively.
COPYRIGHT: (C)1979,JPO&Japio
JP492778A 1978-01-19 1978-01-19 Preparation of semiconductor device Pending JPS5498185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP492778A JPS5498185A (en) 1978-01-19 1978-01-19 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP492778A JPS5498185A (en) 1978-01-19 1978-01-19 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5498185A true JPS5498185A (en) 1979-08-02

Family

ID=11597223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP492778A Pending JPS5498185A (en) 1978-01-19 1978-01-19 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5498185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253933A (en) * 1988-04-04 1989-10-11 Toshiba Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117585A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Manufacture for insulating gate type field effect transistor
JPS52134380A (en) * 1976-05-06 1977-11-10 Nippon Telegr & Teleph Corp <Ntt> Production of mis type semiconductor circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117585A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Manufacture for insulating gate type field effect transistor
JPS52134380A (en) * 1976-05-06 1977-11-10 Nippon Telegr & Teleph Corp <Ntt> Production of mis type semiconductor circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253933A (en) * 1988-04-04 1989-10-11 Toshiba Corp Manufacture of semiconductor device

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