JPS5498185A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5498185A JPS5498185A JP492778A JP492778A JPS5498185A JP S5498185 A JPS5498185 A JP S5498185A JP 492778 A JP492778 A JP 492778A JP 492778 A JP492778 A JP 492778A JP S5498185 A JPS5498185 A JP S5498185A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- thermal oxidation
- remaining
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To form minute patterns with high pattern accurary in the active area by forming a silicon dioxide film for the insulator separation by means of the thermal oxidation of substrate while oxides are remaining.
CONSTITUTION: Form oxidized film 2 of silicon dioxide by thermal oxidation etc. on the main surface of the single conductive type semiconductor substrate 1, form anti-oxidation insulation film 3 on 2, remove photosensitive resin from the inactive are and etch only insulaton film 3 by CF4 type plasma by using residual photosensitive resin 5 as the mask. Then, form p+ layer 6 on substrate 1 by means of ion injection, 100...200 KeV, of single conductive type impuirity such as oron, etc. through exposed oxidized film 2. Then, while residual oxdized film 2 is remaining, form silicon diocide film 8 for insulator separation by means of the thermal oxidation of substrate. With this invention, the pattern accuracy of active area is increased and minute patterns can be formed effectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP492778A JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP492778A JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5498185A true JPS5498185A (en) | 1979-08-02 |
Family
ID=11597223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP492778A Pending JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5498185A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253933A (en) * | 1988-04-04 | 1989-10-11 | Toshiba Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
JPS52134380A (en) * | 1976-05-06 | 1977-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type semiconductor circuits |
-
1978
- 1978-01-19 JP JP492778A patent/JPS5498185A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
JPS52134380A (en) * | 1976-05-06 | 1977-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type semiconductor circuits |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01253933A (en) * | 1988-04-04 | 1989-10-11 | Toshiba Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5240978A (en) | Process for production of semiconductor device | |
JPS52120782A (en) | Manufacture of semiconductor device | |
JPS5498185A (en) | Preparation of semiconductor device | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS5469090A (en) | Manufacture of semiconductor device | |
JPS5272571A (en) | Production of semiconductor device | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS5267963A (en) | Manufacture of semiconductor unit | |
JPS55128830A (en) | Method of working photoresist film | |
JPS5380167A (en) | Manufacture of semiconductor device | |
JPS54134937A (en) | Manufacture of magnetic bubble chip | |
JPS5762543A (en) | Manufacture of semiconductor device | |
JPS52125276A (en) | Preparation of semiconductor integrated circuit device | |
JPS5593268A (en) | Manufacture of semiconductor device | |
JPS5227362A (en) | Formation method of passivation film | |
JPS54162490A (en) | Manufacture of semiconductor device | |
JPS531473A (en) | Manufacture for semiconductor device | |
JPS5527684A (en) | Manufacturing method of semiconductor device | |
JPS5790940A (en) | Manufacture of semiconductor device | |
JPS5555547A (en) | Method of forming electrode and wiring layer of semiconductor device | |
JPS6411325A (en) | Semiconductor device and manufacture thereof | |
JPS5243372A (en) | Process for production of semiconductor | |
JPS6420624A (en) | Manufacture of semiconductor device | |
JPS5374389A (en) | Manufacture of semiconductor device | |
JPS5254378A (en) | Production of semiconductor device |