JPS5491066A - Field effect transistor of insulation gate type - Google Patents

Field effect transistor of insulation gate type

Info

Publication number
JPS5491066A
JPS5491066A JP15794877A JP15794877A JPS5491066A JP S5491066 A JPS5491066 A JP S5491066A JP 15794877 A JP15794877 A JP 15794877A JP 15794877 A JP15794877 A JP 15794877A JP S5491066 A JPS5491066 A JP S5491066A
Authority
JP
Japan
Prior art keywords
drain
layer
gate
type
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15794877A
Other languages
Japanese (ja)
Inventor
Koichiro Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15794877A priority Critical patent/JPS5491066A/en
Publication of JPS5491066A publication Critical patent/JPS5491066A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain higher drain dielectric strength by forming a gate oxidized film to a thickness of less than 1000Å.
CONSTITUTION: After P-type substrate 41 is provided with SiO2 42, channel stopper 43 is diffusion-formed; and thick SiO2 is formed partially by a LOCOS method using a nitride film and the nitride film is removed. By using resist mask 45, phosphorus ions are injected to form N--type layers 46 and 47. Next, the mask is removed and the surface is covered with poly-Si, which is selectively removed to form gate 48. Through film 42, ions are injected to form N+-type source 49 and drain 50. Lastly, ohmic electrode wiring is attained by a normal method and the process is completed. In this structure, since the drain layer right under the easy-to-expand gate electrode of a depletion layer is N--type layer 46 when a voltage is applied to the drain with the gate grounded, the depletion layer expands not only toward the substrate, but also in the direction of layer 46, so that high drain dielectric strength can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP15794877A 1977-12-28 1977-12-28 Field effect transistor of insulation gate type Pending JPS5491066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15794877A JPS5491066A (en) 1977-12-28 1977-12-28 Field effect transistor of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15794877A JPS5491066A (en) 1977-12-28 1977-12-28 Field effect transistor of insulation gate type

Publications (1)

Publication Number Publication Date
JPS5491066A true JPS5491066A (en) 1979-07-19

Family

ID=15660957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15794877A Pending JPS5491066A (en) 1977-12-28 1977-12-28 Field effect transistor of insulation gate type

Country Status (1)

Country Link
JP (1) JPS5491066A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194365A (en) * 1984-10-16 1986-05-13 Oki Electric Ind Co Ltd High withstanding-voltage mos field-effect semiconductor device
JPH02136340U (en) * 1989-04-18 1990-11-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194365A (en) * 1984-10-16 1986-05-13 Oki Electric Ind Co Ltd High withstanding-voltage mos field-effect semiconductor device
JPH02136340U (en) * 1989-04-18 1990-11-14

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