JPS5485673A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5485673A JPS5485673A JP15401977A JP15401977A JPS5485673A JP S5485673 A JPS5485673 A JP S5485673A JP 15401977 A JP15401977 A JP 15401977A JP 15401977 A JP15401977 A JP 15401977A JP S5485673 A JPS5485673 A JP S5485673A
- Authority
- JP
- Japan
- Prior art keywords
- psg
- source
- drain
- gate
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To increase the dielectric strength between the source and the gate, by removing separate PSG after opening window on melt flow PSG silm and after heat treatment for another PSG under damp exygen.
CONSTITUTION: The electrode 25 of polycrystal Si, wiring 26, SiO2, source 22, drain 23, and gate SiO2 24 are formed on the p type Si substrate 20. Coating is made with PSG 27 having phosphorus of about 8%, and selective opening is made, and covering is made with PSG 31 with phosphorus 8% or more. PSG27 and 31 are flowed with processing under damp oxygen for 30 minutes at about 1000°C and steep grading is avoided. The film 31 is removed with HF solution and the Al wire 32 is made. The source and drain are formed shallow with As and the P of the film 31 at melt flow is diffused deeper than that of the layers 22 and 23, then the gate length L is made longer, increasing the dielectric strength between the source and drain.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15401977A JPS6054777B2 (en) | 1977-12-20 | 1977-12-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15401977A JPS6054777B2 (en) | 1977-12-20 | 1977-12-20 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5485673A true JPS5485673A (en) | 1979-07-07 |
JPS6054777B2 JPS6054777B2 (en) | 1985-12-02 |
Family
ID=15575121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15401977A Expired JPS6054777B2 (en) | 1977-12-20 | 1977-12-20 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054777B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197826A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
-
1977
- 1977-12-20 JP JP15401977A patent/JPS6054777B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197826A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0122731B2 (en) * | 1982-05-14 | 1989-04-27 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6054777B2 (en) | 1985-12-02 |
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