JPS5485673A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5485673A
JPS5485673A JP15401977A JP15401977A JPS5485673A JP S5485673 A JPS5485673 A JP S5485673A JP 15401977 A JP15401977 A JP 15401977A JP 15401977 A JP15401977 A JP 15401977A JP S5485673 A JPS5485673 A JP S5485673A
Authority
JP
Japan
Prior art keywords
psg
source
drain
gate
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15401977A
Other languages
Japanese (ja)
Other versions
JPS6054777B2 (en
Inventor
Tadanaka Yoneda
Kazuhiko Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15401977A priority Critical patent/JPS6054777B2/en
Publication of JPS5485673A publication Critical patent/JPS5485673A/en
Publication of JPS6054777B2 publication Critical patent/JPS6054777B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To increase the dielectric strength between the source and the gate, by removing separate PSG after opening window on melt flow PSG silm and after heat treatment for another PSG under damp exygen.
CONSTITUTION: The electrode 25 of polycrystal Si, wiring 26, SiO2, source 22, drain 23, and gate SiO2 24 are formed on the p type Si substrate 20. Coating is made with PSG 27 having phosphorus of about 8%, and selective opening is made, and covering is made with PSG 31 with phosphorus 8% or more. PSG27 and 31 are flowed with processing under damp oxygen for 30 minutes at about 1000°C and steep grading is avoided. The film 31 is removed with HF solution and the Al wire 32 is made. The source and drain are formed shallow with As and the P of the film 31 at melt flow is diffused deeper than that of the layers 22 and 23, then the gate length L is made longer, increasing the dielectric strength between the source and drain.
COPYRIGHT: (C)1979,JPO&Japio
JP15401977A 1977-12-20 1977-12-20 Manufacturing method of semiconductor device Expired JPS6054777B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15401977A JPS6054777B2 (en) 1977-12-20 1977-12-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15401977A JPS6054777B2 (en) 1977-12-20 1977-12-20 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5485673A true JPS5485673A (en) 1979-07-07
JPS6054777B2 JPS6054777B2 (en) 1985-12-02

Family

ID=15575121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15401977A Expired JPS6054777B2 (en) 1977-12-20 1977-12-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6054777B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197826A (en) * 1982-05-14 1983-11-17 Hitachi Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197826A (en) * 1982-05-14 1983-11-17 Hitachi Ltd Manufacture of semiconductor device
JPH0122731B2 (en) * 1982-05-14 1989-04-27 Hitachi Ltd

Also Published As

Publication number Publication date
JPS6054777B2 (en) 1985-12-02

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