JPS55157242A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55157242A JPS55157242A JP6596479A JP6596479A JPS55157242A JP S55157242 A JPS55157242 A JP S55157242A JP 6596479 A JP6596479 A JP 6596479A JP 6596479 A JP6596479 A JP 6596479A JP S55157242 A JPS55157242 A JP S55157242A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- forming
- psg
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent phosphorus from diffusing into a silicon substrate while heat treating a PSG film in a step of forming a surface stability protective film on the surface of a semiconductor element by forming a silicon nitride film on the surface of the element as ground for forming the PSG film. CONSTITUTION:There are formed a channel cutting p<+>-type 22, a field oxide film 23, a gate oxide film 24, a polysilicon gate electrode 25, an n-type source region 26, and an n-type drain region 27 on a p-type silicon substrate 21. Then, a photoresists film 28 is formed, and with the film 28 as a mask a connecting terminal forming portion 9 is formed to form a p-type high density layer 30. Thereafter, the photoresist film 28 is removed, a silicon oxide film 31 is formed on the entire surface, and a silicon nitride film 32 is then formed, and a PSG film 33 is formed thereon, and electrode connecting openings D, E, F and G are perforated thereat. After heat treating the film 33, the films 31, 32 of the openings D-G are removed, and an electrode 34 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6596479A JPS55157242A (en) | 1979-05-28 | 1979-05-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6596479A JPS55157242A (en) | 1979-05-28 | 1979-05-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55157242A true JPS55157242A (en) | 1980-12-06 |
Family
ID=13302179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6596479A Pending JPS55157242A (en) | 1979-05-28 | 1979-05-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55157242A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972754A (en) * | 1998-06-10 | 1999-10-26 | Mosel Vitelic, Inc. | Method for fabricating MOSFET having increased effective gate length |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52104087A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts |
-
1979
- 1979-05-28 JP JP6596479A patent/JPS55157242A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52104087A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972754A (en) * | 1998-06-10 | 1999-10-26 | Mosel Vitelic, Inc. | Method for fabricating MOSFET having increased effective gate length |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5591877A (en) | Manufacture of semiconductor device | |
JPS55157242A (en) | Manufacture of semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS5541738A (en) | Preparation of semiconductor device | |
JPS5456381A (en) | Production of semiconductor device | |
JPS5483778A (en) | Mos semiconductor device and its manufacture | |
JPS55102269A (en) | Method of fabricating semiconductor device | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS54121071A (en) | Insulator gate type field effect semiconductor device | |
JPS568849A (en) | Manufacture of semiconductor integrated circuit | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS56126957A (en) | Manufacture of semiconductor device | |
JPS54154979A (en) | Manufacture of insulated gate type semiconductor device | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS5491185A (en) | Semiconductor divece | |
JPS5550662A (en) | Manufacturing of mos-type semiconductor device | |
JPS5550629A (en) | Manufacture of mesa-type semiconductor device | |
JPS5559738A (en) | Preparation of semiconductor device | |
JPS5518042A (en) | Method of fabricating semiconductor device | |
JPS5596676A (en) | Method of forming junction of semiconductor device | |
JPS55102271A (en) | Method of fabricating semiconductor device | |
JPS55102272A (en) | Method of fabricating mos semiconductor device | |
JPS55102252A (en) | Manufacture of semiconductor device | |
JPS56112742A (en) | Manufacture of semiconductor device | |
JPS5539611A (en) | Manufacturing semiconductor device |